Bipolar (BJT) - Single, Pre-Biased (4216)

Series:

-

Transistor Type:

-

Current - Collector (Ic) (Max):

-

Voltage - Collector Emitter Breakdown (Max):

-

Resistor - Base (R1):

-

Resistor - Emitter Base (R2):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

-

Vce Saturation (Max) @ Ib, Ic:

-

Current - Collector Cutoff (Max):

-

Frequency - Transition:

-

Power - Max:

-

Mounting Type:

-

Package / Case:

-

Supplier Device Package:

-

Series:

-

Transistor Type:

-

Current - Collector (Ic) (Max):

-

Voltage - Collector Emitter Breakdown (Max):

-

Resistor - Base (R1):

-

Resistor - Emitter Base (R2):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

-

Vce Saturation (Max) @ Ib, Ic:

-

Current - Collector Cutoff (Max):

-

Frequency - Transition:

-

Power - Max:

-

Mounting Type:

-

Package / Case:

-

Supplier Device Package:

-

Series:

-

Transistor Type:

NPN - Pre-Biased

Current - Collector (Ic) (Max):

100 mA

Voltage - Collector Emitter Breakdown (Max):

50 V

Resistor - Base (R1):

-

Resistor - Emitter Base (R2):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

68 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic:

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max):

500nA

Frequency - Transition:

250 MHz

Power - Max:

150 mW

Mounting Type:

Surface Mount

Package / Case:

SC-75, SOT-416

Supplier Device Package:

EMT3

Series:

DTC113Z

Transistor Type:

NPN - Pre-Biased

Current - Collector (Ic) (Max):

100 mA

Voltage - Collector Emitter Breakdown (Max):

50 V

Resistor - Base (R1):

-

Resistor - Emitter Base (R2):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

20 @ 20mA, 5V

Vce Saturation (Max) @ Ib, Ic:

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max):

500nA (ICBO)

Frequency - Transition:

250 MHz

Power - Max:

150 mW

Mounting Type:

Surface Mount

Package / Case:

SC-75, SOT-416

Supplier Device Package:

EMT3

Series:

-

Transistor Type:

NPN - Pre-Biased

Current - Collector (Ic) (Max):

600 mA

Voltage - Collector Emitter Breakdown (Max):

40 V

Resistor - Base (R1):

-

Resistor - Emitter Base (R2):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

500 @ 600mA, 5V

Vce Saturation (Max) @ Ib, Ic:

1.15V @ 8mA, 800mA

Current - Collector Cutoff (Max):

500nA

Frequency - Transition:

-

Power - Max:

250 mW

Mounting Type:

Surface Mount

Package / Case:

TO-236-3, SC-59, SOT-23-3

Supplier Device Package:

TO-236AB

Series:

-

Transistor Type:

NPN - Pre-Biased

Current - Collector (Ic) (Max):

100 mA

Voltage - Collector Emitter Breakdown (Max):

50 V

Resistor - Base (R1):

-

Resistor - Emitter Base (R2):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

120 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic:

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max):

100nA (ICBO)

Frequency - Transition:

250 MHz

Power - Max:

100 mW

Mounting Type:

Surface Mount

Package / Case:

SC-70, SOT-323

Supplier Device Package:

SC-70