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Bipolar (BJT) - Single, Pre-Biased (4216)

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PDTC114EU/MIF

Part Number:

PDTC114EU/MIF

Manufacturer:

Nexperia

Description:

RET

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10 kOhms

  • Resistor - Emitter Base (R2):

    10 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    1µA

  • Frequency - Transition:

    230MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-70, SOT-323

  • Supplier Device Package:

    SC-70

Stock:

326

1
PDTA114EU/MIF

Part Number:

PDTA114EU/MIF

Manufacturer:

Nexperia

Description:

RET

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10 kOhms

  • Resistor - Emitter Base (R2):

    10 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    1µA

  • Frequency - Transition:

    180MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-70, SOT-323

  • Supplier Device Package:

    SC-70

Stock:

254

1
RN2105MFV,L3F

Part Number:

RN2105MFV,L3F

Manufacturer:

Toshiba Semiconductor and Storage

Description:

X34 PB-F VESM TRANSISTOR PD 150M

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    2.2 kOhms

  • Resistor - Emitter Base (R2):

    47 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    -

  • Power - Max:

    150mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-723

  • Supplier Device Package:

    VESM

Stock:

186

1
RN2103MFV,L3F

Part Number:

RN2103MFV,L3F

Manufacturer:

Toshiba Semiconductor and Storage

Description:

X34 PB-F VESM TRANSISTOR PD 150M

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    22 kOhms

  • Resistor - Emitter Base (R2):

    22 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    -

  • Power - Max:

    150mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-723

  • Supplier Device Package:

    VESM

Stock:

461

1

Part Number:

PDTC144ET/DG/B2,21

Manufacturer:

Nexperia

Description:

TRANS RET TO-236AB

  • Series:

    Automotive, AEC-Q101

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10 kOhms

  • Resistor - Emitter Base (R2):

    10 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    1µA

  • Frequency - Transition:

    230MHz

  • Power - Max:

    250mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    TO-236AB

Stock:

394

1

Part Number:

PDTC114ET/DG/B2,21

Manufacturer:

Nexperia

Description:

TRANS RET TO-236AB

  • Series:

    Automotive, AEC-Q101

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10 kOhms

  • Resistor - Emitter Base (R2):

    10 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    1µA

  • Frequency - Transition:

    230MHz

  • Power - Max:

    250mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    TO-236AB

Stock:

381

1

Part Number:

RN2104MFV,L3F

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 50V 500NA VESM

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    47 kOhms

  • Resistor - Emitter Base (R2):

    47 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz

  • Power - Max:

    150mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-723

  • Supplier Device Package:

    VESM

Stock:

156

1

Part Number:

RN1109MFV,L3F

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS NPN 50V 500NA VESM

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    47 kOhms

  • Resistor - Emitter Base (R2):

    22 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    150mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-723

  • Supplier Device Package:

    VESM

Stock:

272

1

Part Number:

RN2107MFV,L3F

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS NPN

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10 kOhms

  • Resistor - Emitter Base (R2):

    47 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    150mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-723

  • Supplier Device Package:

    VESM

Stock:

433

1

Part Number:

RN2402S,LF(D

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 0.2W S-MINI

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10 kOhms

  • Resistor - Emitter Base (R2):

    10 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    50 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    S-Mini

Stock:

209

1

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