Bipolar (BJT) - Single, Pre-Biased (4216)

Series:

-

Transistor Type:

PNP - Pre-Biased

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1):

10 kOhms

Resistor - Emitter Base (R2):

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

30 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic:

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max):

1µA

Frequency - Transition:

180MHz

Power - Max:

150mW

Mounting Type:

Surface Mount

Package / Case:

SC-75, SOT-416

Supplier Device Package:

SC-75

Series:

-

Transistor Type:

PNP - Pre-Biased

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1):

4.7 kOhms

Resistor - Emitter Base (R2):

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

100 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic:

100mV @ 250µA, 5mA

Current - Collector Cutoff (Max):

1µA

Frequency - Transition:

-

Power - Max:

250mW

Mounting Type:

Surface Mount

Package / Case:

TO-236-3, SC-59, SOT-23-3

Supplier Device Package:

SMT3; MPAK

Series:

-

Transistor Type:

NPN - Pre-Biased

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1):

47 kOhms

Resistor - Emitter Base (R2):

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

40 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic:

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max):

1µA

Frequency - Transition:

-

Power - Max:

500mW

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3

Series:

-

Transistor Type:

NPN - Pre-Biased

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1):

47 kOhms

Resistor - Emitter Base (R2):

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

40 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic:

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max):

1µA

Frequency - Transition:

-

Power - Max:

250mW

Mounting Type:

Surface Mount

Package / Case:

TO-236-3, SC-59, SOT-23-3

Supplier Device Package:

SMT3; MPAK

Series:

-

Transistor Type:

NPN - Pre-Biased

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1):

47 kOhms

Resistor - Emitter Base (R2):

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

40 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic:

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max):

1µA

Frequency - Transition:

-

Power - Max:

150mW

Mounting Type:

Surface Mount

Package / Case:

SC-75, SOT-416

Supplier Device Package:

SC-75

Series:

-

Transistor Type:

NPN - Pre-Biased

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1):

47 kOhms

Resistor - Emitter Base (R2):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic:

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max):

1µA

Frequency - Transition:

-

Power - Max:

500mW

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3

Series:

-

Transistor Type:

NPN - Pre-Biased

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1):

4.7 kOhms

Resistor - Emitter Base (R2):

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

100 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic:

100mV @ 250µA, 5mA

Current - Collector Cutoff (Max):

1µA

Frequency - Transition:

-

Power - Max:

500mW

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3

Series:

-

Transistor Type:

NPN - Pre-Biased

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1):

4.7 kOhms

Resistor - Emitter Base (R2):

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

50 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic:

100mV @ 500µA, 10mA

Current - Collector Cutoff (Max):

1µA

Frequency - Transition:

-

Power - Max:

500mW

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3

Series:

-

Transistor Type:

NPN - Pre-Biased

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1):

4.7 kOhms

Resistor - Emitter Base (R2):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

200 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic:

100mV @ 250µA, 5mA

Current - Collector Cutoff (Max):

1µA

Frequency - Transition:

-

Power - Max:

500mW

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3

Series:

-

Transistor Type:

NPN - Pre-Biased

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1):

22 kOhms

Resistor - Emitter Base (R2):

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

80 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic:

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max):

1µA

Frequency - Transition:

-

Power - Max:

500mW

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3