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Bipolar (BJT) - Single, Pre-Biased (4216)

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Part Number:

RN1406S,LF(D

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS NPN 0.2W SMINI

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    4.7 kOhms

  • Resistor - Emitter Base (R2):

    47 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    S-Mini

Stock:

446

1

Part Number:

BCR505E6778HTSA1

Manufacturer:

Infineon Technologies

Description:

TRANS PREBIAS NPN 250MW SOT23

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    500mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    2.2 kOhms

  • Resistor - Emitter Base (R2):

    10 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 50mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 2.5mA, 50mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    100MHz

  • Power - Max:

    330mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3

Stock:

492

1

Part Number:

BCR503E6393HTSA1

Manufacturer:

Infineon Technologies

Description:

TRANS PREBIAS PNP SOT23

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    500mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    2.2 kOhms

  • Resistor - Emitter Base (R2):

    2.2 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    40 @ 50mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 2.5mA, 50mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    100MHz

  • Power - Max:

    330mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3

Stock:

173

1

Part Number:

BCR198E6393HTSA1

Manufacturer:

Infineon Technologies

Description:

TRANS PREBIAS PNP SOT23

  • Series:

    Automotive, AEC-Q101

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    47 kOhms

  • Resistor - Emitter Base (R2):

    47 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    190MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3

Stock:

385

1

Part Number:

BCR192E6785HTSA1

Manufacturer:

Infineon Technologies

Description:

TRANS PREBIAS PNP SOT23

  • Series:

    Automotive, AEC-Q101

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    22 kOhms

  • Resistor - Emitter Base (R2):

    47 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3

Stock:

470

1

Part Number:

BCR183E6359HTMA1

Manufacturer:

Infineon Technologies

Description:

TRANS PREBIAS PNP SOT23

  • Series:

    Automotive, AEC-Q101

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10 kOhms

  • Resistor - Emitter Base (R2):

    10 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3

Stock:

363

1

Part Number:

BCR148E6393HTSA1

Manufacturer:

Infineon Technologies

Description:

TRANS PREBIAS PNP SOT23

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    47 kOhms

  • Resistor - Emitter Base (R2):

    47 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    100MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3

Stock:

207

1

Part Number:

BCR135E6359HTMA1

Manufacturer:

Infineon Technologies

Description:

TRANS PREBIAS PNP SOT23

  • Series:

    Automotive, AEC-Q101

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10 kOhms

  • Resistor - Emitter Base (R2):

    47 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    150MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3

Stock:

134

1

Part Number:

BCR133E6393HTSA1

Manufacturer:

Infineon Technologies

Description:

TRANS PREBIAS NPN SOT23

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10 kOhms

  • Resistor - Emitter Base (R2):

    10 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    130MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3

Stock:

343

1
FJV4104RMTF

Part Number:

FJV4104RMTF

Manufacturer:

ON Semiconductor

Description:

TRANS PREBIAS PNP 200MW SOT23-3

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    47 kOhms

  • Resistor - Emitter Base (R2):

    47 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    68 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3 (TO-236)

Stock:

461

1

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