晶体管 - UGBT，MOSFET - 单

STGD7NB120S-1

STMicroelectronics

IGBT 1200V 10A 55W IPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 10A
• Current - Collector Pulsed (Icm): 20A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
• Power - Max: 55W
• Switching Energy: 15mJ (off)
• Input Type: Standard
• Gate Charge: 29nC
• Td (on/off) @ 25°C: 570ns/-
• Test Condition: 960V, 7A, 1 kOhm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Supplier Device Package: I-Pak

封装: TO-251-3 Short Leads, IPak, TO-251AA

IXGH30N60B2D1

IXYS

IGBT 600V 70A 190W TO247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
• Power - Max: 190W
• Switching Energy: 320µJ (off)
• Input Type: Standard
• Gate Charge: 66nC
• Td (on/off) @ 25°C: 13ns/110ns
• Test Condition: 400V, 24A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封装: TO-247-3

FGH30N6S2D

Fairchild/ON Semiconductor

IGBT 600V 45A 167W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 45A
• Current - Collector Pulsed (Icm): 108A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
• Power - Max: 167W
• Switching Energy: 55µJ (on), 100µJ (off)
• Input Type: Standard
• Gate Charge: 23nC
• Td (on/off) @ 25°C: 6ns/40ns
• Test Condition: 390V, 12A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 46ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封装: TO-247-3

NGB18N40CLBT4

ON Semiconductor

IGBT 430V 18A 115W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 430V
• Current - Collector (Ic) (Max): 18A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
• Power - Max: 115W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRGP50B60PD1-EP

Infineon Technologies

IGBT 600V 75A 390W TO247AD

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
• Power - Max: 390W
• Switching Energy: 255µJ (on), 375µJ (off)
• Input Type: Standard
• Gate Charge: 205nC
• Td (on/off) @ 25°C: 30ns/130ns
• Test Condition: 390V, 33A, 3.3 Ohm, 15V
• Reverse Recovery Time (trr): 42ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD

封装: TO-3P-3 Full Pack

AUIRG4BC30USTRL

Infineon Technologies

IGBT 600V 23A 100W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 23A
• Current - Collector Pulsed (Icm): 92A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
• Power - Max: 100W
• Switching Energy: 160µJ (on), 200µJ (off)
• Input Type: Standard
• Gate Charge: 50nC
• Td (on/off) @ 25°C: 17ns/78ns
• Test Condition: 480V, 12A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

APT50GT120B2RDQ2G

Microsemi Corporation

IGBT 1200V 94A 625W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 94A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
• Power - Max: 625W
• Switching Energy: 2330µJ (off)
• Input Type: Standard
• Gate Charge: 340nC
• Td (on/off) @ 25°C: 24ns/230ns
• Test Condition: 800V, 50A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: -

封装: TO-247-3

IXYX100N65B3D1

IXYS

IGBT 650V 188A 1150W PLUS247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 225A
• Current - Collector Pulsed (Icm): 460A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
• Power - Max: 830W
• Switching Energy: 1.27mJ (on), 1.37mJ (off)
• Input Type: Standard
• Gate Charge: 168nC
• Td (on/off) @ 25°C: 29ns/150ns
• Test Condition: 400V, 50A, 3 Ohm, 15V
• Reverse Recovery Time (trr): 156ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

封装: TO-247-3

IXA4IF1200TC

IXYS

IGBT 1200V 9A 45W TO252AA

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 9A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
• Power - Max: 45W
• Switching Energy: 400µJ (on), 300µJ (off)
• Input Type: Standard
• Gate Charge: 12nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 3A, 330 Ohm, 15V
• Reverse Recovery Time (trr): 350ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268AA

封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXGA12N60CD1

IXYS

IGBT 600V 24A 100W TO263AA

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 24A
• Current - Collector Pulsed (Icm): 48A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
• Power - Max: 100W
• Switching Energy: 90µJ (off)
• Input Type: Standard
• Gate Charge: 32nC
• Td (on/off) @ 25°C: 20ns/60ns
• Test Condition: 480V, 12A, 18 Ohm, 15V
• Reverse Recovery Time (trr): 35ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (IXGA)

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STGWT60V60DLF

STMicroelectronics

IGBT BIPO 600V 60A TO3P

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

STGWT28IH125DF

STMicroelectronics

IGBT 1250V 60A 375W TO-3P

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1250V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
• Power - Max: 375W
• Switching Energy: 720µJ (off)
• Input Type: Standard
• Gate Charge: 114nC
• Td (on/off) @ 25°C: -/128ns
• Test Condition: 600V, 25A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

封装: TO-3P-3, SC-65-3

STGW20H65FB

STMicroelectronics

IGBT 650V 40A 168W TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
• Power - Max: 168W
• Switching Energy: 77µJ (on), 170µJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 30ns/139ns
• Test Condition: 400V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封装: TO-247-3

IXGQ90N27PB

IXYS

IGBT 270V 90A 150W TO3P

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 270V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
• Power - Max: 150W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 79nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

封装: TO-3P-3, SC-65-3

APT45GP120BG

Microsemi Corporation

IGBT 1200V 100A 625W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 100A
• Current - Collector Pulsed (Icm): 170A
• Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
• Power - Max: 625W
• Switching Energy: 900µJ (on), 904µJ (off)
• Input Type: Standard
• Gate Charge: 185nC
• Td (on/off) @ 25°C: 18ns/102ns
• Test Condition: 600V, 45A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

封装: TO-247-3

FGA40T65UQDF

Fairchild/ON Semiconductor

IGBT 650V 80A 231W TO3PN

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 40A
• Power - Max: 231W
• Switching Energy: 989µJ (on), 310µJ (off)
• Input Type: Standard
• Gate Charge: 306nC
• Td (on/off) @ 25°C: 32ns/271ns
• Test Condition: 400V, 40A, 6 Ohm, 15V
• Reverse Recovery Time (trr): 89ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3PN

封装: TO-3P-3, SC-65-3

STGY50NC60WD

STMicroelectronics

IGBT 600V 110A 278W MAX247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 110A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
• Power - Max: 278W
• Switching Energy: 365µJ (on), 560µJ (off)
• Input Type: Standard
• Gate Charge: 195nC
• Td (on/off) @ 25°C: 52ns/240ns
• Test Condition: 390V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 55ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: MAX247?

封装: TO-247-3

AOK30B135W1

Alpha & Omega Semiconductor Inc.

IGBT 1350V 30A 170W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1350V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
• Power - Max: 340W
• Switching Energy: 1.47mJ (off)
• Input Type: Standard
• Gate Charge: 62nC
• Td (on/off) @ 25°C: -/129ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封装: TO-247-3

RGPR20NS43HRTL

Rohm Semiconductor

IGBT 460V 20A IGNITION LPDS

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 460 V
• Current - Collector (Ic) (Max): 20 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A
• Power - Max: 107 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 14 nC
• Td (on/off) @ 25°C: 500ns/4µs
• Test Condition: 300V, 8A, 100Ohm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: LPDS

封装: -

NTE3311

NTE Electronics, Inc

IGBT-600V 15AMP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 25 A
• Current - Collector Pulsed (Icm): 50 A
• Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
• Power - Max: 150 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 400ns/500ns
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

封装: -

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RJH60D2DPP-A0-T2

Renesas Electronics Corporation

IGBT 600V 10A TO-220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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AFGY160T65SPD-B4

onsemi

IGBT TRENCH FS 650V 240A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 240 A
• Current - Collector Pulsed (Icm): 480 A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
• Power - Max: 882 W
• Switching Energy: 12.4mJ (on), 5.7mJ (off)
• Input Type: Standard
• Gate Charge: 245 nC
• Td (on/off) @ 25°C: 53ns/98ns
• Test Condition: 400V, 160A, 5Ohm, 15V
• Reverse Recovery Time (trr): 132 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封装: -

SIGC81T60SNCX1SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 100 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 65ns/450ns
• Test Condition: 400V, 100A, 3.3Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封装: -

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RGW60TS65DHRC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 64A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 64 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
• Power - Max: 178 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 84 nC
• Td (on/off) @ 25°C: 36ns/107ns
• Test Condition: 400V, 15A, 10Ohm, 15V
• Reverse Recovery Time (trr): 87 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封装: -

MMIX1X340N65B4

IXYS

IGBT 650V 450A 24-SMPD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 450 A
• Current - Collector Pulsed (Icm): 1200 A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
• Power - Max: 1200 W
• Switching Energy: 4.4mJ (on), 3.5mJ (off)
• Input Type: Standard
• Gate Charge: 553 nC
• Td (on/off) @ 25°C: 62ns/245ns
• Test Condition: 400V, 100A, 1Ohm, 15V
• Reverse Recovery Time (trr): 76 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 24-PowerSMD, 21 Leads
• Supplier Device Package: 24-SMPD

封装: -

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FGAF30S65AQ

onsemi

IGBT 650V 30A TO-3PF

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 60 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
• Power - Max: 83 W
• Switching Energy: 515µJ (on), 140µJ (off)
• Input Type: Standard
• Gate Charge: 58 nC
• Td (on/off) @ 25°C: 18ns/92ns
• Test Condition: 400V, 15A, 13Ohm, 15V
• Reverse Recovery Time (trr): 267 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-3PF-3

封装: -

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AIKQ120N75CP2XKSA1

Infineon Technologies

IGBT 750V 150A TO247-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 750 V
• Current - Collector (Ic) (Max): 150 A
• Current - Collector Pulsed (Icm): 360 A
• Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 120A
• Power - Max: 682 W
• Switching Energy: 6.82mJ (on), 3.8mJ (off)
• Input Type: Standard
• Gate Charge: 731 nC
• Td (on/off) @ 25°C: 71ns/244ns
• Test Condition: 470V, 120A, 5Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-46

封装: -

IXGT6N170A-TRL

IXYS

IGBT 1700V 6A TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 6 A
• Current - Collector Pulsed (Icm): 14 A
• Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
• Power - Max: 75 W
• Switching Energy: 590µJ (on), 180µJ (off)
• Input Type: Standard
• Gate Charge: 18.5 nC
• Td (on/off) @ 25°C: 46ns/220ns
• Test Condition: 850V, 6A, 33Ohm, 15V
• Reverse Recovery Time (trr): 40 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

封装: -

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STGB20H65FB2

STMicroelectronics

IGBT 600V 40A 167W D2PAK

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 40 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
• Power - Max: 147 W
• Switching Energy: 265µJ (on), 214µJ (off)
• Input Type: Standard
• Gate Charge: 56 nC
• Td (on/off) @ 25°C: 16ns/78.8ns
• Test Condition: 400V, 20A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)

封装: -

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SIGC18T60NCX1SA3

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 20 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 21ns/110ns
• Test Condition: 300V, 20A, 13Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封装: -

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