页 104 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  104/148
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG8P25N120KD-EPBF
Infineon Technologies

IGBT 1200V 40A 180W TO-247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 180W
  • Switching Energy: 800µJ (on), 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: 20ns/170ns
  • Test Condition: 600V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: TO-247-3
库存4,000
1200V
40A
45A
2V @ 15V, 15A
180W
800µJ (on), 900µJ (off)
Standard
135nC
20ns/170ns
600V, 15A, 10 Ohm, 15V
70ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRGS4615DTRLPBF
Infineon Technologies

IGBT 600V 23A 99W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
  • Power - Max: 99W
  • Switching Energy: 70µJ (on), 145µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 30ns/95ns
  • Test Condition: 400V, 8A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,720
600V
23A
24A
1.85V @ 15V, 8A
99W
70µJ (on), 145µJ (off)
Standard
19nC
30ns/95ns
400V, 8A, 47 Ohm, 15V
60ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG4BC30FD-STRR
Infineon Technologies

IGBT 600V 31A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 630µJ (on), 1.39mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 42ns/230ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,680
600V
31A
120A
1.8V @ 15V, 17A
100W
630µJ (on), 1.39mJ (off)
Standard
51nC
42ns/230ns
480V, 17A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
FGH30N120FTDTU
Fairchild/ON Semiconductor

IGBT 1200V 60A 339W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 339W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 208nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 730ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存4,128
1200V
60A
90A
2V @ 15V, 30A
339W
-
Standard
208nC
-
-
730ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IXGA16N60C2D1
IXYS

IGBT 600V 40A 150W TO263

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
  • Power - Max: 150W
  • Switching Energy: 160µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 16ns/75ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,784
600V
40A
100A
3V @ 15V, 12A
150W
160µJ (on), 90µJ (off)
Standard
25nC
16ns/75ns
400V, 12A, 22 Ohm, 15V
30ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
hot HGT1S14N36G3VLT
Fairchild/ON Semiconductor

IGBT 390V 18A 100W TO262AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 5V, 14A
  • Power - Max: 100W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: -/7µs
  • Test Condition: 300V, 7A, 25 Ohm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262-3
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存13,140
390V
18A
-
2.2V @ 5V, 14A
100W
-
Logic
24nC
-/7µs
300V, 7A, 25 Ohm, 5V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262-3
hot IRGSL15B60KDPBF
Infineon Technologies

IGBT 600V 31A 208W TO262

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 62A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 208W
  • Switching Energy: 220µJ (on), 340µJ (off)
  • Input Type: Standard
  • Gate Charge: 56nC
  • Td (on/off) @ 25°C: 34ns/184ns
  • Test Condition: 400V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 92ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: PG-TO262-3
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存16,524
600V
31A
62A
2.2V @ 15V, 15A
208W
220µJ (on), 340µJ (off)
Standard
56nC
34ns/184ns
400V, 15A, 22 Ohm, 15V
92ns
-55°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
PG-TO262-3
IGB20N65S5ATMA1
Infineon Technologies

IGBT PRODUCTS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存5,568
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXGX82N120B3
IXYS

IGBT 1200V 230A 1250W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 230A
  • Current - Collector Pulsed (Icm): 500A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
  • Power - Max: 1250W
  • Switching Energy: 5mJ (on), 3.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 350nC
  • Td (on/off) @ 25°C: 30ns/210ns
  • Test Condition: 600V, 80A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封装: TO-247-3
库存2,400
1200V
230A
500A
3.2V @ 15V, 82A
1250W
5mJ (on), 3.3mJ (off)
Standard
350nC
30ns/210ns
600V, 80A, 2 Ohm, 15V
-
-
Through Hole
TO-247-3
PLUS247?-3
IXXH30N60B3
IXYS

IGBT 600V TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 115A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
  • Power - Max: 270W
  • Switching Energy: 550µJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 39nC
  • Td (on/off) @ 25°C: 23ns/97ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: TO-247-3
库存2,768
600V
60A
115A
1.85V @ 15V, 24A
270W
550µJ (on), 500µJ (off)
Standard
39nC
23ns/97ns
400V, 24A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
NGTB40N135IHRWG
ON Semiconductor

IGBT 1350V 80A 394W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1350V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
  • Power - Max: 394W
  • Switching Energy: 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 234nC
  • Td (on/off) @ 25°C: -/250ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存4,544
1350V
80A
120A
2.7V @ 15V, 40A
394W
1.3mJ (off)
Standard
234nC
-/250ns
600V, 40A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
RJH60F0DPK-00#T0
Renesas Electronics America

IGBT 600V 50A 201.6W TO-3P

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 25A
  • Power - Max: 201.6W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 46ns/70ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: TO-3P-3, SC-65-3
库存3,696
600V
50A
-
1.82V @ 15V, 25A
201.6W
-
Standard
-
46ns/70ns
400V, 30A, 5 Ohm, 15V
140ns
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot IRGPS46160DPBF
Infineon Technologies

IGBT 600V 240A 750W SUPER247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 240A
  • Current - Collector Pulsed (Icm): 360A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
  • Power - Max: 750W
  • Switching Energy: 5.75mJ (on), 3.43mJ (off)
  • Input Type: Standard
  • Gate Charge: 240nC
  • Td (on/off) @ 25°C: 80ns/190ns
  • Test Condition: 400V, 120A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: SUPER-247 (TO-274AA)
封装: TO-247-3
库存103,464
600V
240A
360A
2.05V @ 15V, 120A
750W
5.75mJ (on), 3.43mJ (off)
Standard
240nC
80ns/190ns
400V, 120A, 4.7 Ohm, 15V
130ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
SUPER-247 (TO-274AA)
IXBX75N170
IXYS

IGBT 1700V 200A 1040W PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 200A
  • Current - Collector Pulsed (Icm): 580A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
  • Power - Max: 1040W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 350nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.5µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封装: TO-247-3
库存3,328
1700V
200A
580A
3.1V @ 15V, 75A
1040W
-
Standard
350nC
-
-
1.5µs
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IRG4IBC20WPBF
Infineon Technologies

IGBT 600V 12A 34W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
  • Power - Max: 34W
  • Switching Energy: 60µJ (on), 80µJ (off)
  • Input Type: Standard
  • Gate Charge: 26nC
  • Td (on/off) @ 25°C: 22ns/110ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
封装: TO-220-3 Full Pack
库存8,220
600V
12A
52A
2.6V @ 15V, 6.5A
34W
60µJ (on), 80µJ (off)
Standard
26nC
22ns/110ns
480V, 6.5A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
STGB30V60F
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, V S

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
  • Power - Max: 260W
  • Switching Energy: 383µJ (on), 233µJ (off)
  • Input Type: Standard
  • Gate Charge: 163nC
  • Td (on/off) @ 25°C: 45ns/189ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存22,872
600V
60A
120A
2.3V @ 15V, 30A
260W
383µJ (on), 233µJ (off)
Standard
163nC
45ns/189ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IKW20N60TFKSA1
Infineon Technologies

IGBT 600V 40A 166W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
  • Power - Max: 166W
  • Switching Energy: 770µJ
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 18ns/199ns
  • Test Condition: 400V, 20A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): 41ns
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: TO-247-3
库存6,432
600V
40A
60A
2.05V @ 15V, 20A
166W
770µJ
Standard
120nC
18ns/199ns
400V, 20A, 12 Ohm, 15V
41ns
-
Through Hole
TO-247-3
PG-TO247-3
IXYA20N65C3-TRL
IXYS

IXYA20N65C3 TRL

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 105 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 230 W
  • Switching Energy: 430µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 30 nC
  • Td (on/off) @ 25°C: 19ns/80ns
  • Test Condition: 400V, 20A, 20Ohm, 15V
  • Reverse Recovery Time (trr): 34 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
封装: -
Request a Quote
650 V
50 A
105 A
2.5V @ 15V, 20A
230 W
430µJ (on), 350µJ (off)
Standard
30 nC
19ns/80ns
400V, 20A, 20Ohm, 15V
34 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
IRGC75B60UB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
75 A
-
2.9V @ 15V, 75A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
STK762-921G-E
onsemi

IGBT ACTIVE FILTER POWER IC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKWH60N65WR6XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 100A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 180 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
  • Power - Max: 240 W
  • Switching Energy: 1.82mJ (on), 850µJ (off)
  • Input Type: Standard
  • Gate Charge: 174 nC
  • Td (on/off) @ 25°C: 35ns/311ns
  • Test Condition: 400V, 60A, 15Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-32
封装: -
库存1,314
650 V
100 A
180 A
1.85V @ 15V, 60A
240 W
1.82mJ (on), 850µJ (off)
Standard
174 nC
35ns/311ns
400V, 60A, 15Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-32
IXA20I1200PZ-TUB
IXYS

DISC IGBT XPT-GENX3 TO-263D2

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 38 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 165 W
  • Switching Energy: 1.6mJ (on), 1.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 47 nC
  • Td (on/off) @ 25°C: 48ns/230ns
  • Test Condition: 600V, 15A, 56Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
封装: -
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1200 V
38 A
-
2.1V @ 15V, 15A
165 W
1.6mJ (on), 1.7mJ (off)
Standard
47 nC
48ns/230ns
600V, 15A, 56Ohm, 15V
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
HGTG12N60D1D
Harris Corporation

UFS SERIES N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 21 A
  • Current - Collector Pulsed (Icm): 48 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
  • Power - Max: 75 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 70 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 60 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: -
Request a Quote
600 V
21 A
48 A
2.5V @ 15V, 12A
75 W
-
Standard
70 nC
-
-
60 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
GT30J65MRB-S1E
Toshiba Semiconductor and Storage

650V SILICON N-CHANNEL IGBT, TO-

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
  • Power - Max: 200 W
  • Switching Energy: 1.4mJ (on), 220µJ (off)
  • Input Type: Standard
  • Gate Charge: 70 nC
  • Td (on/off) @ 25°C: 75ns/400ns
  • Test Condition: 400V, 15A, 56Ohm, 15V
  • Reverse Recovery Time (trr): 200 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
封装: -
库存237
650 V
60 A
-
1.8V @ 15V, 30A
200 W
1.4mJ (on), 220µJ (off)
Standard
70 nC
75ns/400ns
400V, 15A, 56Ohm, 15V
200 ns
175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
RGTV00TS65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 95A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 95 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 276 W
  • Switching Energy: 1.17mJ (on), 940µJ (off)
  • Input Type: Standard
  • Gate Charge: 104 nC
  • Td (on/off) @ 25°C: 41ns/142ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 102 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封装: -
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650 V
95 A
200 A
1.9V @ 15V, 50A
276 W
1.17mJ (on), 940µJ (off)
Standard
104 nC
41ns/142ns
400V, 50A, 10Ohm, 15V
102 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
HGT1S12N60C3DS
Fairchild Semiconductor

IGBT, 24A, 600V, N-CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 24 A
  • Current - Collector Pulsed (Icm): 96 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 104 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 71 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 32 ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封装: -
Request a Quote
600 V
24 A
96 A
2.2V @ 15V, 15A
104 W
-
Standard
71 nC
-
-
32 ns
-40°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
IXYP30N120A4
IXYS

IGBT DISCRETE TO-220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 106 A
  • Current - Collector Pulsed (Icm): 184 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
  • Power - Max: 500 W
  • Switching Energy: 4mJ (on), 3.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 57 nC
  • Td (on/off) @ 25°C: 15ns/235ns
  • Test Condition: 960V, 25A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 42 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220 (IXYP)
封装: -
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1200 V
106 A
184 A
1.9V @ 15V, 25A
500 W
4mJ (on), 3.4mJ (off)
Standard
57 nC
15ns/235ns
960V, 25A, 5Ohm, 15V
42 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220 (IXYP)
MMIX1Y82N120C3H1
IXYS

DISC IGBT SMPD PKG-STANDARD SMPD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 78 A
  • Current - Collector Pulsed (Icm): 320 A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 82A
  • Power - Max: 320 W
  • Switching Energy: 4.95mJ (on), 2.78mJ (off)
  • Input Type: Standard
  • Gate Charge: 215 nC
  • Td (on/off) @ 25°C: 29ns/192ns
  • Test Condition: 600V, 80A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 78 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-PowerSMD, 21 Leads
  • Supplier Device Package: 24-SMPD
封装: -
Request a Quote
1200 V
78 A
320 A
3.4V @ 15V, 82A
320 W
4.95mJ (on), 2.78mJ (off)
Standard
215 nC
29ns/192ns
600V, 80A, 2Ohm, 15V
78 ns
-55°C ~ 150°C (TJ)
Surface Mount
24-PowerSMD, 21 Leads
24-SMPD
HGTB12N60D1C
Harris Corporation

12A, 600V N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 12 A
  • Current - Collector Pulsed (Icm): 40 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Power - Max: 75 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
封装: -
Request a Quote
600 V
12 A
40 A
2.7V @ 15V, 10A
75 W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5
TO-220-5
STGB50H65FB2
STMicroelectronics

DISCRETE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 86 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 272 W
  • Switching Energy: 910µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 151 nC
  • Td (on/off) @ 25°C: 28ns/115ns
  • Test Condition: 400V, 50A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
封装: -
Request a Quote
650 V
86 A
150 A
2V @ 15V, 50A
272 W
910µJ (on), 580µJ (off)
Standard
151 nC
28ns/115ns
400V, 50A, 4.7Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)