页 109 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  109/148
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
FGA180N30DTU
Fairchild/ON Semiconductor

IGBT 300V 180A 480W TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 180A
  • Current - Collector Pulsed (Icm): 450A
  • Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 40A
  • Power - Max: 480W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 185nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 21ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封装: TO-3P-3, SC-65-3
库存4,208
300V
180A
450A
1.4V @ 15V, 40A
480W
-
Standard
185nC
-
-
21ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
hot STGB7NB60HDT4
STMicroelectronics

IGBT 600V 14A 80W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 56A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
  • Power - Max: 80W
  • Switching Energy: 85µJ (off)
  • Input Type: Standard
  • Gate Charge: 42nC
  • Td (on/off) @ 25°C: 15ns/75ns
  • Test Condition: 480V, 7A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存15,444
600V
14A
56A
2.8V @ 15V, 7A
80W
85µJ (off)
Standard
42nC
15ns/75ns
480V, 7A, 10 Ohm, 15V
100ns
150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
AUIRGPS4070D0
Infineon Technologies

IGBT 700V SUPER TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,096
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKW50N65H5AXKSA1
Infineon Technologies

IGBT 650V 80A 305W PG-TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 270W
  • Switching Energy: 450µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 21ns/173ns
  • Test Condition: 400V, 25A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: TO-247-3
库存6,192
650V
80A
150A
2.1V @ 15V, 50A
270W
450µJ (on), 160µJ (off)
Standard
116nC
21ns/173ns
400V, 25A, 12 Ohm, 15V
58ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IXYR50N120C3D1
IXYS

IGBT 1200V 56A 290W ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 56A
  • Current - Collector Pulsed (Icm): 210A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
  • Power - Max: 290W
  • Switching Energy: 3mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 142nC
  • Td (on/off) @ 25°C: 28ns/133ns
  • Test Condition: 600V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 195ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISOPLUS247?
封装: TO-247-3
库存5,440
1200V
56A
210A
4V @ 15V, 50A
290W
3mJ (on), 1mJ (off)
Standard
142nC
28ns/133ns
600V, 50A, 5 Ohm, 15V
195ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
ISOPLUS247?
IXYH40N120B3
IXYS

IGBT 1200V 96A 577W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 96A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
  • Power - Max: 577W
  • Switching Energy: 2.7mJ (on), 1.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 87nC
  • Td (on/off) @ 25°C: 22ns/177ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
封装: TO-247-3
库存2,912
1200V
96A
200A
2.9V @ 15V, 40A
577W
2.7mJ (on), 1.6mJ (off)
Standard
87nC
22ns/177ns
600V, 40A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
IXGK50N60B2D1
IXYS

IGBT 600V 75A 400W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 400W
  • Switching Energy: 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 18ns/190ns
  • Test Condition: 480V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
封装: TO-264-3, TO-264AA
库存6,896
600V
75A
200A
2V @ 15V, 40A
400W
550µJ (off)
Standard
140nC
18ns/190ns
480V, 40A, 5 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
IXGR24N120C3D1
IXYS

IGBT 1200V 48A 200W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 1.37mJ (on), 470µJ (off)
  • Input Type: Standard
  • Gate Charge: 79nC
  • Td (on/off) @ 25°C: 16ns/93ns
  • Test Condition: 600V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 220ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
封装: ISOPLUS247?
库存6,288
1200V
48A
96A
4.2V @ 15V, 20A
200W
1.37mJ (on), 470µJ (off)
Standard
79nC
16ns/93ns
600V, 20A, 5 Ohm, 15V
220ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
IXGT72N60B3
IXYS

IGBT 600V 75A 540W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
  • Power - Max: 540W
  • Switching Energy: 1.38mJ (on), 1.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 230nC
  • Td (on/off) @ 25°C: 31ns/150ns
  • Test Condition: 480V, 50A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存2,816
600V
75A
400A
1.8V @ 15V, 60A
540W
1.38mJ (on), 1.05mJ (off)
Standard
230nC
31ns/150ns
480V, 50A, 3 Ohm, 15V
-
-
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
hot FGH25N120FTDS
Fairchild/ON Semiconductor

IGBT 1200V 50A 313W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
  • Power - Max: 313W
  • Switching Energy: 1.42mJ (on), 1.16mJ (off)
  • Input Type: Standard
  • Gate Charge: 169nC
  • Td (on/off) @ 25°C: 26ns/151ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 535ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存4,848
1200V
50A
75A
2V @ 15V, 25A
313W
1.42mJ (on), 1.16mJ (off)
Standard
169nC
26ns/151ns
600V, 25A, 10 Ohm, 15V
535ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IXGP28N120B
IXYS

IGBT 1200V 50A 250W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A
  • Power - Max: 250W
  • Switching Energy: 2mJ (off)
  • Input Type: Standard
  • Gate Charge: 92nC
  • Td (on/off) @ 25°C: 30ns/180ns
  • Test Condition: 960V, 28A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存4,160
1200V
50A
150A
3.5V @ 15V, 28A
250W
2mJ (off)
Standard
92nC
30ns/180ns
960V, 28A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
NGTD28T65F2WP
ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: Die
库存5,712
650V
-
200A
2V @ 15V, 75A
-
-
Standard
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
Die
Die
hot NGTB45N60S2WG
ON Semiconductor

IGBT 45A 600V TO-247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 45A
  • Power - Max: 300W
  • Switching Energy: 360µJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: -/151ns
  • Test Condition: 400V, 45A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 498ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: TO-247-3
库存4,832
600V
90A
180A
2.3V @ 15V, 45A
300W
360µJ (off)
Standard
135nC
-/151ns
400V, 45A, 10 Ohm, 15V
498ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot MGD623S
Sanken

IGBT 600V 50A 150W TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 75ns/300ns
  • Test Condition: 300V, 50A, 39 Ohm, 15V
  • Reverse Recovery Time (trr): 300ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3P
封装: TO-3P-3 Full Pack
库存15,444
600V
50A
100A
2.4V @ 15V, 50A
150W
-
Standard
-
75ns/300ns
300V, 50A, 39 Ohm, 15V
300ns
150°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3P
MMIX1X200N60B3H1
IXYS

IGBT 600V 175A 520W SMPD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 175A
  • Current - Collector Pulsed (Icm): 1000A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
  • Power - Max: 520W
  • Switching Energy: 2.85mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 315nC
  • Td (on/off) @ 25°C: 48ns/160ns
  • Test Condition: 360V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-PowerSMD, 21 Leads
  • Supplier Device Package: 24-SMPD
封装: 24-PowerSMD, 21 Leads
库存2,000
600V
175A
1000A
1.7V @ 15V, 100A
520W
2.85mJ (on), 2.9mJ (off)
Standard
315nC
48ns/160ns
360V, 100A, 1 Ohm, 15V
100ns
-55°C ~ 150°C (TJ)
Surface Mount
24-PowerSMD, 21 Leads
24-SMPD
RGTH50TS65DGC11
Rohm Semiconductor

IGBT 650V 50A 174W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 174W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 49nC
  • Td (on/off) @ 25°C: 27ns/94ns
  • Test Condition: 400V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封装: TO-247-3
库存11,088
650V
50A
100A
2.1V @ 15V, 25A
174W
-
Standard
49nC
27ns/94ns
400V, 25A, 10 Ohm, 15V
58ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
FGB3236_F085
Fairchild/ON Semiconductor

IGBT 360V 44A 187W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 360V
  • Current - Collector (Ic) (Max): 44A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.4V @ 4V, 6A
  • Power - Max: 187W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 20nC
  • Td (on/off) @ 25°C: -/5.4µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,608
360V
44A
-
1.4V @ 4V, 6A
187W
-
Logic
20nC
-/5.4µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
IXYH16N170C
IXYS

IGBT 1.7KV 40A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A
  • Power - Max: 310W
  • Switching Energy: 2.1mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 56nC
  • Td (on/off) @ 25°C: 11ns/140ns
  • Test Condition: 850V, 16A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 19ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
封装: TO-247-3
库存7,552
1700V
40A
100A
3.8V @ 15V, 16A
310W
2.1mJ (on), 1.5mJ (off)
Standard
56nC
11ns/140ns
850V, 16A, 10 Ohm, 15V
19ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
IKD15N60RATMA1
Infineon Technologies

IGBT 600V 30A 250W TO252

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 370µJ (on), 530µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 16ns/183ns
  • Test Condition: 400V, 15A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存3,088
600V
30A
45A
2.1V @ 15V, 15A
250W
370µJ (on), 530µJ (off)
Standard
90nC
16ns/183ns
400V, 15A, 15 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IRG4RC10UTRPBF
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 80µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 19ns/116ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,664
600V
8.5A
34A
2.6V @ 15V, 5A
38W
80µJ (on), 160µJ (off)
Standard
15nC
19ns/116ns
480V, 5A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot STGW20H60DF
STMicroelectronics

IGBT 600V 40A 167W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 167W
  • Switching Energy: 209µJ (on), 261µJ (off)
  • Input Type: Standard
  • Gate Charge: 115nC
  • Td (on/off) @ 25°C: 42.5ns/177ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存6,112
600V
40A
80A
2V @ 15V, 20A
167W
209µJ (on), 261µJ (off)
Standard
115nC
42.5ns/177ns
400V, 20A, 10 Ohm, 15V
90ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IRG7PSH73K10PBF
Infineon Technologies

IGBT 1200V 220A 1150W SUPER247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 220A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
  • Power - Max: 1150W
  • Switching Energy: 7.7mJ (on), 4.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 360nC
  • Td (on/off) @ 25°C: 63ns/267ns
  • Test Condition: 600V, 75A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-274AA
  • Supplier Device Package: SUPER-247 (TO-274AA)
封装: TO-274AA
库存13,980
1200V
220A
225A
2.3V @ 15V, 75A
1150W
7.7mJ (on), 4.6mJ (off)
Standard
360nC
63ns/267ns
600V, 75A, 4.7 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-274AA
SUPER-247 (TO-274AA)
AIMBG75R040M1HXTMA1
Infineon Technologies

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,997
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AIKB30N65DF5ATMA1
Infineon Technologies

IC DISCRETE 650V TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 55 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 188 W
  • Switching Energy: 330µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 70 nC
  • Td (on/off) @ 25°C: 25ns/188ns
  • Test Condition: 400V, 15A, 23Ohm, 15V
  • Reverse Recovery Time (trr): 67 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
封装: -
库存5,049
650 V
55 A
90 A
2.1V @ 15V, 30A
188 W
330µJ (on), 100µJ (off)
Standard
70 nC
25ns/188ns
400V, 15A, 23Ohm, 15V
67 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3
IKQB160N75CP2AKSA1
Infineon Technologies

IGBT 750V 200A TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 750 V
  • Current - Collector (Ic) (Max): 200 A
  • Current - Collector Pulsed (Icm): 480 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 160A
  • Power - Max: 750 W
  • Switching Energy: 9.7mJ (on), 5.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 610 nC
  • Td (on/off) @ 25°C: 72ns/324ns
  • Test Condition: 450V, 160A, 4.8Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-51
封装: -
库存648
750 V
200 A
480 A
1.65V @ 15V, 160A
750 W
9.7mJ (on), 5.2mJ (off)
Standard
610 nC
72ns/324ns
450V, 160A, 4.8Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-51
HGTP15N50C1
Harris Corporation

15A, 500V, N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 500 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 35 A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
  • Power - Max: 75 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 33 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: -
Request a Quote
500 V
15 A
35 A
3.2V @ 20V, 35A
75 W
-
Standard
33 nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
RGW60NL65HRBTL
Rohm Semiconductor

IGBT TRENCH FS 650V 67A TO263L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 67 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 187 W
  • Switching Energy: 180µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 84 nC
  • Td (on/off) @ 25°C: 34ns/122ns
  • Test Condition: 400V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
封装: -
库存3,000
650 V
67 A
120 A
1.9V @ 15V, 30A
187 W
180µJ (on), 250µJ (off)
Standard
84 nC
34ns/122ns
400V, 15A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
FGH40T65SPD-F085
onsemi

IGBT NPT 650V 80A TO247-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 267 W
  • Switching Energy: 1.16mJ (on), 270µJ (off)
  • Input Type: Standard
  • Gate Charge: 36 nC
  • Td (on/off) @ 25°C: 18ns/35ns
  • Test Condition: 400V, 40A, 6Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: -
Request a Quote
650 V
80 A
120 A
2.4V @ 15V, 40A
267 W
1.16mJ (on), 270µJ (off)
Standard
36 nC
18ns/35ns
400V, 40A, 6Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGD3040G2-F085V
onsemi

ECOSPARK2 300MJ 400V N-

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 41 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: 0.9µs/4.8µs
  • Test Condition: 300V, 6.5A, 1000Ohm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
封装: -
Request a Quote
400 V
41 A
-
1.25V @ 4V, 6A
150 W
-
Logic
21 nC
0.9µs/4.8µs
300V, 6.5A, 1000Ohm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
FGY60T120SQDN
onsemi

IGBT 1200V 60A UFS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 120 A
  • Current - Collector Pulsed (Icm): 240 A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A
  • Power - Max: 517 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 311 nC
  • Td (on/off) @ 25°C: 52ns/296ns
  • Test Condition: 600V, 60A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247-3
封装: -
库存1,167
1200 V
120 A
240 A
1.95V @ 15V, 60A
517 W
-
Standard
311 nC
52ns/296ns
600V, 60A, 10Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
TO-247-3