页 105 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  105/148
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零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG8P15N120KDPBF
Infineon Technologies

IGBT 1200V 30A 125W TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
  • Power - Max: 125W
  • Switching Energy: 600µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 98nC
  • Td (on/off) @ 25°C: 15ns/170ns
  • Test Condition: 600V, 10A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存5,680
1200V
30A
30A
2V @ 15V, 10A
125W
600µJ (on), 600µJ (off)
Standard
98nC
15ns/170ns
600V, 10A, 10 Ohm, 15V
60ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRG4RC20FTR
Infineon Technologies

IGBT 600V 22A 66W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 44A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 66W
  • Switching Energy: 190µJ (on), 920µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 26ns/194ns
  • Test Condition: 480V, 12A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存393,960
600V
22A
44A
2.1V @ 15V, 12A
66W
190µJ (on), 920µJ (off)
Standard
27nC
26ns/194ns
480V, 12A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IXGT20N60BD1
IXYS

IGBT 600V 40A 150W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 150W
  • Switching Energy: 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 15ns/110ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存7,840
600V
40A
80A
2V @ 15V, 20A
150W
700µJ (off)
Standard
55nC
15ns/110ns
480V, 20A, 10 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
IXGH41N60
IXYS

IGBT 600V 76A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 76A
  • Current - Collector Pulsed (Icm): 152A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 41A
  • Power - Max: 200W
  • Switching Energy: 8mJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 30ns/600ns
  • Test Condition: 480V, 41A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存3,472
600V
76A
152A
1.6V @ 15V, 41A
200W
8mJ (off)
Standard
120nC
30ns/600ns
480V, 41A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGH38N60
IXYS

IGBT 600V 76A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 76A
  • Current - Collector Pulsed (Icm): 152A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 38A
  • Power - Max: 200W
  • Switching Energy: 9mJ (off)
  • Input Type: Standard
  • Gate Charge: 125nC
  • Td (on/off) @ 25°C: 30ns/600ns
  • Test Condition: 480V, 38A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存5,008
600V
76A
152A
1.8V @ 15V, 38A
200W
9mJ (off)
Standard
125nC
30ns/600ns
480V, 38A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXSX40N60BD1
IXYS

IGBT 600V 75A 280W PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
  • Power - Max: 280W
  • Switching Energy: 1.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 50ns/110ns
  • Test Condition: 480V, 40A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封装: TO-247-3
库存7,872
600V
75A
150A
2.2V @ 15V, 40A
280W
1.8mJ (off)
Standard
190nC
50ns/110ns
480V, 40A, 2.7 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IKQ40N120CT2XKSA1
Infineon Technologies

IGBT HS SW 1200V 40A TO-247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
  • Power - Max: 500W
  • Switching Energy: 3.1mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 32ns/328ns
  • Test Condition: 600V, 40A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
封装: TO-247-3
库存5,264
1200V
80A
160A
2.15V @ 15V, 40A
500W
3.1mJ (on), 2.9mJ (off)
Standard
190nC
32ns/328ns
600V, 40A, 12 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
IGW40N65F5AXKSA1
Infineon Technologies

IGBT 650V TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 74A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 250W
  • Switching Energy: 350µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 19ns/165ns
  • Test Condition: 400V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: TO-247-3
库存4,048
650V
74A
120A
2.1V @ 15V, 40A
250W
350µJ (on), 100µJ (off)
Standard
95nC
19ns/165ns
400V, 20A, 15 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IXGR35N120B
IXYS

IGBT 1200V 70A 200W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
  • Power - Max: 200W
  • Switching Energy: 3.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 50ns/180ns
  • Test Condition: 960V, 35A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
封装: ISOPLUS247?
库存4,832
1200V
70A
140A
3.3V @ 15V, 35A
200W
3.8mJ (off)
Standard
170nC
50ns/180ns
960V, 35A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
IXGP12N120A3
IXYS

IGBT 1200V 22A 100W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 20.4nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存7,504
1200V
22A
60A
3V @ 15V, 12A
100W
-
Standard
20.4nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot IKW75N60TA
Infineon Technologies

IGBT 600V 80A 428W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 428W
  • Switching Energy: 4.5mJ
  • Input Type: Standard
  • Gate Charge: 470nC
  • Td (on/off) @ 25°C: 33ns/330ns
  • Test Condition: 400V, 75A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 121ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: TO-247-3
库存103,464
600V
80A
225A
2V @ 15V, 75A
428W
4.5mJ
Standard
470nC
33ns/330ns
400V, 75A, 5 Ohm, 15V
121ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IXGX72N60A3H1
IXYS

IGBT 600V 75A 540W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
  • Power - Max: 540W
  • Switching Energy: 1.4mJ (on), 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 230nC
  • Td (on/off) @ 25°C: 31ns/320ns
  • Test Condition: 480V, 50A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封装: TO-247-3
库存7,856
600V
75A
400A
1.35V @ 15V, 60A
540W
1.4mJ (on), 3.5mJ (off)
Standard
230nC
31ns/320ns
480V, 50A, 3 Ohm, 15V
140ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
FGI3040G2_F085
Fairchild/ON Semiconductor

ECOSPARK 2-400V IGNITION IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21nC
  • Td (on/off) @ 25°C: 900ns/4.8µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存8,064
400V
41A
-
1.25V @ 4V, 6A
150W
-
Logic
21nC
900ns/4.8µs
-
-
-55°C ~ 175°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262AA
IRG4BC30KD-SPBF
Infineon Technologies

IGBT 600V 28A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 56A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 100W
  • Switching Energy: 600µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 60ns/160ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,800
600V
28A
56A
2.7V @ 15V, 16A
100W
600µJ (on), 580µJ (off)
Standard
67nC
60ns/160ns
480V, 16A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IHW30N65R5XKSA1
Infineon Technologies

IGBT 650V TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
  • Power - Max: 176W
  • Switching Energy: 850µJ (on), 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 153nC
  • Td (on/off) @ 25°C: 29ns/220ns
  • Test Condition: 400V, 30A, 13 Ohm, 15V
  • Reverse Recovery Time (trr): 95ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: TO-247-3
库存8,388
650V
60A
90A
1.7V @ 15V, 30A
176W
850µJ (on), 240µJ (off)
Standard
153nC
29ns/220ns
400V, 30A, 13 Ohm, 15V
95ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
STGWA50M65DF2
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 375W
  • Switching Energy: 880µJ (on), 1.57mJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 42ns/130ns
  • Test Condition: 400V, 50A, 6.8 Ohm, 15V
  • Reverse Recovery Time (trr): 162ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封装: TO-247-3
库存15,336
650V
80A
150A
2.1V @ 15V, 50A
375W
880µJ (on), 1.57mJ (off)
Standard
150nC
42ns/130ns
400V, 50A, 6.8 Ohm, 15V
162ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
hot APT50GN60BDQ2G
Microsemi Corporation

IGBT 600V 107A 366W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 107A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
  • Power - Max: 366W
  • Switching Energy: 1185µJ (on), 1565µJ (off)
  • Input Type: Standard
  • Gate Charge: 325nC
  • Td (on/off) @ 25°C: 20ns/230ns
  • Test Condition: 400V, 50A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存4,592
600V
107A
150A
1.85V @ 15V, 50A
366W
1185µJ (on), 1565µJ (off)
Standard
325nC
20ns/230ns
400V, 50A, 4.3 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
IGC99T120T8RLX1SA3
Infineon Technologies

IGBT 1200V 100A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
1200 V
-
300 A
1.97V @ 15V, 100A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
AOK50B65GL1
Alpha & Omega Semiconductor Inc.

IGBT 50A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 312 W
  • Switching Energy: 3.37mJ (on), 1.59mJ (off)
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 282ns/915ns
  • Test Condition: 300V, 50A, 100Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: -
Request a Quote
650 V
100 A
300 A
2V @ 15V, 50A
312 W
3.37mJ (on), 1.59mJ (off)
Standard
120 nC
282ns/915ns
300V, 50A, 100Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IRGC50B120UB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
1200 V
50 A
-
3.5V @ 15V, 50A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
SIGC14T60SNCX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 31ns/261ns
  • Test Condition: 400V, 15A, 21Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
15 A
45 A
2.5V @ 15V, 15A
-
-
Standard
-
31ns/261ns
400V, 15A, 21Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
FGAF20S65AQ
onsemi

IGBT 650V 20A TO-3PF

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 75 W
  • Switching Energy: 345µJ (on), 95µJ (off)
  • Input Type: Standard
  • Gate Charge: 38 nC
  • Td (on/off) @ 25°C: 18ns/102ns
  • Test Condition: 400V, 10A, 23Ohm, 15V
  • Reverse Recovery Time (trr): 235 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF-3
封装: -
Request a Quote
650 V
40 A
60 A
2.1V @ 15V, 20A
75 W
345µJ (on), 95µJ (off)
Standard
38 nC
18ns/102ns
400V, 10A, 23Ohm, 15V
235 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF-3
SIGC14T60NCX1SA6
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 15A, 18Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
15 A
45 A
2.5V @ 15V, 15A
-
-
Standard
-
21ns/110ns
300V, 15A, 18Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
FGF65A3L
Sanken Electric USA Inc.

FIELD STOP IGBT WITH FRD 650V/30

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.96V @ 15V, 30A
  • Power - Max: 72 W
  • Switching Energy: 600µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 60 nC
  • Td (on/off) @ 25°C: 30ns/90ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 50 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
封装: -
Request a Quote
650 V
50 A
90 A
1.96V @ 15V, 30A
72 W
600µJ (on), 600µJ (off)
Standard
60 nC
30ns/90ns
400V, 30A, 10Ohm, 15V
50 ns
175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
IRGC50B60PB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
-
-
1.65V @ 15V, 10A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
FGH40T65SH-F155
onsemi

IGBT 650V 80A 268W TO-247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 268 W
  • Switching Energy: 1.01mJ (on), 297µJ (off)
  • Input Type: Standard
  • Gate Charge: 72.2 nC
  • Td (on/off) @ 25°C: 19.2ns/65.6ns
  • Test Condition: 400V, 40A, 6Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: -
Request a Quote
650 V
80 A
120 A
2.1V @ 15V, 40A
268 W
1.01mJ (on), 297µJ (off)
Standard
72.2 nC
19.2ns/65.6ns
400V, 40A, 6Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IRGC100B60UB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
100 A
-
2.9V @ 15V, 100A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
CMFCLGF100X120BTAM-AS
Microchip Technology

CMFCLGF100X120BTAM-AS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
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-
-
-
-
-
-
-
-
-
-
-
-
-
-
HGTD8P50G1
Harris Corporation

IGBT 500V 12A IPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 500 V
  • Current - Collector (Ic) (Max): 12 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 8A
  • Power - Max: 66 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 30 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
  • Supplier Device Package: IPAK
封装: -
Request a Quote
500 V
12 A
18 A
3.7V @ 15V, 8A
66 W
-
Standard
30 nC
-
-
-
-40°C ~ 150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPAK, TO-251AA
IPAK
IPB014N08NM6ATMA1
Infineon Technologies

TRENCH 40<-<100V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
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