FETs, MOSFETs - Single (41758)

Series:

MDmesh™ M6

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

700 V

Current - Continuous Drain (Id) @ 25°C:

3.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

1.4Ohm @ 1.75A, 10V

Vgs(th) (Max) @ Id:

3.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

5.1 nC @ 10 V

Vgs (Max):

±25V

Input Capacitance (Ciss) (Max) @ Vds:

170 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

45W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

IPAK

Package / Case:

TO-251-3 Stub Leads, IPAK

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

260mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

2.5Ohm @ 300mA, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

1.22 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

21 pF @ 30 V

FET Feature:

-

Power Dissipation (Max):

200mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DFN1006-3

Package / Case:

SC-101, SOT-883

Series:

-

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

-

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

-

FET Type:

N-Channel

Technology:

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V

Rds On (Max) @ Id, Vgs:

41mOhm @ 30A, 18V

Vgs(th) (Max) @ Id:

5V @ 13mA

Gate Charge (Qg) (Max) @ Vgs:

82 nC @ 18 V

Vgs (Max):

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

2925 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

249W (Tc)

Operating Temperature:

175°C

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-4L(X)

Package / Case:

TO-247-4

Series:

Trench

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

250 V

Current - Continuous Drain (Id) @ 25°C:

86A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

37mOhm @ 43A, 10V

Vgs(th) (Max) @ Id:

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

105 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

5330 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

540W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-3P

Package / Case:

TO-3P-3, SC-65-3

Series:

TrenchFET® Gen V

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

80 V

Current - Continuous Drain (Id) @ 25°C:

16.9A (Ta), 58.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

7.5V, 10V

Rds On (Max) @ Id, Vgs:

8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

28.5 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1380 pF @ 40 V

FET Feature:

-

Power Dissipation (Max):

4.8W (Ta), 56.8W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK® 1212-8S

Package / Case:

PowerPAK® 1212-8S

Series:

OptiMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

454A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

0.8mOhm @ 150A, 10V

Vgs(th) (Max) @ Id:

3.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

185 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

980 pF @ 30 V

FET Feature:

-

Power Dissipation (Max):

278W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-HSOF-8

Package / Case:

8-PowerSFN

Series:

E

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

309mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

64 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

1205 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

147W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

-

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V

Rds On (Max) @ Id, Vgs:

30mOhm @ 50A, 18V

Vgs(th) (Max) @ Id:

4.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

150 nC @ 18 V

Vgs (Max):

+22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

3540 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

469W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

H2PAK-7

Package / Case:

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA