Part Number:
SI2366DS-T1-BE3
Manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 30-V (D-S) MOSFET
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
4.5A (Ta), 5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
36mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
335 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.25W (Ta), 2.1W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Stock:
23904
Part Number:
DMTH8028LFVW-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 61V~100V POWERDI33
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
27A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
25mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
10.4 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
631 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
1.5W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerDI3333-8 (SWP) Type UX
Package / Case:
8-PowerVDFN
Stock:
0
Part Number:
IMZA120R007M1HXKSA1
Manufacturer:
Infineon Technologies
Description:
SIC DISCRETE
Series:
CoolSiC™
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
225A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Rds On (Max) @ Id, Vgs:
9.9mOhm @ 108A, 18V
Vgs(th) (Max) @ Id:
5.2V @ 47mA
Gate Charge (Qg) (Max) @ Vgs:
220 nC @ 18 V
Vgs (Max):
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds:
9170 nF @ 25 V
FET Feature:
-
Power Dissipation (Max):
750W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-4-8
Package / Case:
TO-247-4
Stock:
231
Part Number:
IRL620PBF-BE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 200V 5.2A TO220AB
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
800mOhm @ 3.1A, 5V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
360 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
50W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Package / Case:
TO-220-3
Stock:
240
Part Number:
DMN2451UFDQ-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 20V 900MA 3DFN
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Rds On (Max) @ Id, Vgs:
200mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.7 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
52 pF @ 16 V
FET Feature:
-
Power Dissipation (Max):
500mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
U-DFN1212-3 (Type C)
Package / Case:
3-PowerUDFN
Stock:
9000
Part Number:
SIHP068N60EF-GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 600V 41A TO220AB
Series:
EF
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
41A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
68mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
77 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
2628 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
250W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Package / Case:
TO-220-3
Stock:
3000
Part Number:
AOWF600A60
Manufacturer:
Alpha & Omega Semiconductor Inc.
Description:
MOSFET N-CH 600V 8A TO262F
Series:
aMOS5™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
8A (Tj)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
608 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
23W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-262F
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Stock:
0
Part Number:
AOWF600A70
Manufacturer:
Alpha & Omega Semiconductor Inc.
Description:
MOSFET N-CH 700V 8.5A TO262F
Series:
aMOS5™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
700 V
Current - Continuous Drain (Id) @ 25°C:
8.5A (Tj)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
15.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
870 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-262F
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Stock:
0
Part Number:
TSM500P02CX
Manufacturer:
Taiwan Semiconductor Corporation
Description:
-20V, -4.7A, SINGLE P-CHANNEL PO
Series:
-
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
50mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:
0.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
9.6 nC @ 4.5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
850 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.56W (Tc)
Operating Temperature:
150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23
Package / Case:
TO-236-3, SC-59, SOT-23-3
Stock:
0
Part Number:
SSM3J371R-LF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET P-CH 20V 4A SOT23F
Series:
U-MOSVI
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Rds On (Max) @ Id, Vgs:
55mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
10.4 nC @ 4.5 V
Vgs (Max):
+6V, -8V
Input Capacitance (Ciss) (Max) @ Vds:
630 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
150°C
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23F
Package / Case:
SOT-23-3 Flat Leads
Stock:
34488
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