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FETs, MOSFETs - Single (41758)

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Part Number:

SI2366DS-T1-BE3

Manufacturer:

Vishay Siliconix

Description:

N-CHANNEL 30-V (D-S) MOSFET

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30 V

  • Current - Continuous Drain (Id) @ 25°C:

    4.5A (Ta), 5.8A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    36mOhm @ 4.5A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    10 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    335 pF @ 15 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    1.25W (Ta), 2.1W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    SOT-23-3 (TO-236)

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

Stock:

23904

1

Part Number:

DMTH8028LFVW-7

Manufacturer:

Diodes Incorporated

Description:

MOSFET BVDSS: 61V~100V POWERDI33

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    80 V

  • Current - Continuous Drain (Id) @ 25°C:

    27A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    25mOhm @ 5A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    10.4 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    631 pF @ 40 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    1.5W (Ta)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount, Wettable Flank

  • Supplier Device Package:

    PowerDI3333-8 (SWP) Type UX

  • Package / Case:

    8-PowerVDFN

Stock:

0

1

Part Number:

IMZA120R007M1HXKSA1

Manufacturer:

Infineon Technologies

Description:

SIC DISCRETE

  • Series:

    CoolSiC™

  • FET Type:

    N-Channel

  • Technology:

    SiCFET (Silicon Carbide)

  • Drain to Source Voltage (Vdss):

    1200 V

  • Current - Continuous Drain (Id) @ 25°C:

    225A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    15V, 18V

  • Rds On (Max) @ Id, Vgs:

    9.9mOhm @ 108A, 18V

  • Vgs(th) (Max) @ Id:

    5.2V @ 47mA

  • Gate Charge (Qg) (Max) @ Vgs:

    220 nC @ 18 V

  • Vgs (Max):

    +20V, -5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    9170 nF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    750W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    PG-TO247-4-8

  • Package / Case:

    TO-247-4

Stock:

231

1

Part Number:

IRL620PBF-BE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 200V 5.2A TO220AB

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    200 V

  • Current - Continuous Drain (Id) @ 25°C:

    5.2A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    800mOhm @ 3.1A, 5V

  • Vgs(th) (Max) @ Id:

    2V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    16 nC @ 5 V

  • Vgs (Max):

    ±10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    360 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    50W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220AB

  • Package / Case:

    TO-220-3

Stock:

240

1

Part Number:

DMN2451UFDQ-7

Manufacturer:

Diodes Incorporated

Description:

MOSFET N-CH 20V 900MA 3DFN

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    20 V

  • Current - Continuous Drain (Id) @ 25°C:

    1.1A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    1.5V, 4.5V

  • Rds On (Max) @ Id, Vgs:

    200mOhm @ 200mA, 4.5V

  • Vgs(th) (Max) @ Id:

    1V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    0.7 nC @ 4.5 V

  • Vgs (Max):

    ±12V

  • Input Capacitance (Ciss) (Max) @ Vds:

    52 pF @ 16 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    500mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    U-DFN1212-3 (Type C)

  • Package / Case:

    3-PowerUDFN

Stock:

9000

1

Part Number:

SIHP068N60EF-GE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 600V 41A TO220AB

  • Series:

    EF

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    600 V

  • Current - Continuous Drain (Id) @ 25°C:

    41A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    68mOhm @ 16A, 10V

  • Vgs(th) (Max) @ Id:

    5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    77 nC @ 10 V

  • Vgs (Max):

    ±30V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2628 pF @ 100 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    250W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220AB

  • Package / Case:

    TO-220-3

Stock:

3000

1

Part Number:

AOWF600A60

Manufacturer:

Alpha & Omega Semiconductor Inc.

Description:

MOSFET N-CH 600V 8A TO262F

  • Series:

    aMOS5™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    600 V

  • Current - Continuous Drain (Id) @ 25°C:

    8A (Tj)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    600mOhm @ 2.1A, 10V

  • Vgs(th) (Max) @ Id:

    3.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    11.5 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    608 pF @ 100 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    23W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-262F

  • Package / Case:

    TO-262-3 Long Leads, I2PAK, TO-262AA

Stock:

0

1

Part Number:

AOWF600A70

Manufacturer:

Alpha & Omega Semiconductor Inc.

Description:

MOSFET N-CH 700V 8.5A TO262F

  • Series:

    aMOS5™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    700 V

  • Current - Continuous Drain (Id) @ 25°C:

    8.5A (Tj)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    600mOhm @ 2.5A, 10V

  • Vgs(th) (Max) @ Id:

    3.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    15.5 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    870 pF @ 100 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    25W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-262F

  • Package / Case:

    TO-262-3 Long Leads, I2PAK, TO-262AA

Stock:

0

1

Part Number:

TSM500P02CX

Manufacturer:

Taiwan Semiconductor Corporation

Description:

-20V, -4.7A, SINGLE P-CHANNEL PO

  • Series:

    -

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    20 V

  • Current - Continuous Drain (Id) @ 25°C:

    4.7A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    1.8V, 4.5V

  • Rds On (Max) @ Id, Vgs:

    50mOhm @ 3A, 4.5V

  • Vgs(th) (Max) @ Id:

    0.8V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    9.6 nC @ 4.5 V

  • Vgs (Max):

    ±10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    850 pF @ 10 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    1.56W (Tc)

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    SOT-23

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

Stock:

0

1

Part Number:

SSM3J371R-LF

Manufacturer:

Toshiba Semiconductor and Storage

Description:

MOSFET P-CH 20V 4A SOT23F

  • Series:

    U-MOSVI

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    20 V

  • Current - Continuous Drain (Id) @ 25°C:

    4A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    1.5V, 4.5V

  • Rds On (Max) @ Id, Vgs:

    55mOhm @ 3A, 4.5V

  • Vgs(th) (Max) @ Id:

    1V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    10.4 nC @ 4.5 V

  • Vgs (Max):

    +6V, -8V

  • Input Capacitance (Ciss) (Max) @ Vds:

    630 pF @ 10 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    1W (Ta)

  • Operating Temperature:

    150°C

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    SOT-23F

  • Package / Case:

    SOT-23-3 Flat Leads

Stock:

34488

1

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