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FETs, MOSFETs - Single (41758)

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Part Number:

PSMN2R8-40YSD-2X

Manufacturer:

Nexperia

Description:

PSMN2R8-40YSD/SOT669/LFPAK

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40 V

  • Current - Continuous Drain (Id) @ 25°C:

    160A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    2.8mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    3.6V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    62 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    4507 pF @ 20 V

  • FET Feature:

    Schottky Diode (Body)

  • Power Dissipation (Max):

    147W (Ta)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    LFPAK56, Power-SO8

  • Package / Case:

    SC-100, SOT-669

Stock:

0

1

Part Number:

SQS460EN-T1_BE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 60V 8A PPAK1212-8

  • Series:

    TrenchFET®

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60 V

  • Current - Continuous Drain (Id) @ 25°C:

    8A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    36mOhm @ 5.3A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    20 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    755 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    39W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PowerPAK® 1212-8

  • Package / Case:

    PowerPAK® 1212-8

Stock:

184077

1

Part Number:

SQJ431AEP-T1_BE3

Manufacturer:

Vishay Siliconix

Description:

P-CHANNEL 200-V (D-S) 175C MOSFE

  • Series:

    TrenchFET®

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    200 V

  • Current - Continuous Drain (Id) @ 25°C:

    9.4A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    6V, 10V

  • Rds On (Max) @ Id, Vgs:

    305mOhm @ 3.8A, 10V

  • Vgs(th) (Max) @ Id:

    3.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    85 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    3700 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    68W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PowerPAK® SO-8

  • Package / Case:

    PowerPAK® SO-8

Stock:

15627

1

Part Number:

RSR025N05TL

Manufacturer:

Rohm Semiconductor

Description:

NCH 45V 2.5A SMALL SIGNAL MOSFET

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    45 V

  • Current - Continuous Drain (Id) @ 25°C:

    2.5A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    4V, 10V

  • Rds On (Max) @ Id, Vgs:

    100mOhm @ 2.5A, 10V

  • Vgs(th) (Max) @ Id:

    3V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    3.6 nC @ 5 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    260 pF @ 10 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    700mW (Ta)

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    TSMT3

  • Package / Case:

    SC-96

Stock:

8625

1

Part Number:

IRF9Z14PBF-BE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET P-CH 60V 6.7A TO220AB

  • Series:

    -

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60 V

  • Current - Continuous Drain (Id) @ 25°C:

    6.7A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    500mOhm @ 4A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    12 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    270 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    43W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220AB

  • Package / Case:

    TO-220-3

Stock:

4293

1

Part Number:

DMN3066LQ-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET BVDSS: 25V~30V SOT23 T&R

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30 V

  • Current - Continuous Drain (Id) @ 25°C:

    3.6A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    2.5V, 4.5V

  • Rds On (Max) @ Id, Vgs:

    67mOhm @ 2.5A, 4.5V

  • Vgs(th) (Max) @ Id:

    1.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    4.1 nC @ 4.5 V

  • Vgs (Max):

    ±12V

  • Input Capacitance (Ciss) (Max) @ Vds:

    353 pF @ 10 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    810mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    SOT-23-3

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

Stock:

0

1

Part Number:

CSD17507Q5AT

Manufacturer:

Texas Instruments

Description:

IC CLOCK BUFFER

  • Series:

    NexFET™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30 V

  • Current - Continuous Drain (Id) @ 25°C:

    13A (Ta), 65A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    10.8mOhm @ 11A, 10V

  • Vgs(th) (Max) @ Id:

    2.1V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    3.6 nC @ 4.5 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    530 pF @ 15 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    3W (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    8-VSONP (5x6)

  • Package / Case:

    8-PowerTDFN

Stock:

2250

1

Part Number:

SIDR578EP-T1-RE3

Manufacturer:

Vishay Siliconix

Description:

N-CHANNEL 150 V (D-S) 175C MOSFE

  • Series:

    TrenchFET® Gen V

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    150 V

  • Current - Continuous Drain (Id) @ 25°C:

    17.4A (Ta), 78A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    7.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    8.8mOhm @ 20A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    49 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2540 pF @ 75 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    7.5W (Ta), 150W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PowerPAK® SO-8DC

  • Package / Case:

    PowerPAK® SO-8

Stock:

0

1

Part Number:

RQ7G080ATTCR

Manufacturer:

Rohm Semiconductor

Description:

PCH -40V -8A SMALL SIGNAL POWER

  • Series:

    -

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40 V

  • Current - Continuous Drain (Id) @ 25°C:

    8A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    18.2mOhm @ 8A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    37 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2060 pF @ 20 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    1.1W (Ta)

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    TSMT8

  • Package / Case:

    8-SMD, Flat Lead

Stock:

13065

1

Part Number:

DMP31D7LFB-7B

Manufacturer:

Diodes Incorporated

Description:

MOSFET BVDSS: 25V~30V X1-DFN1006

  • Series:

    -

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30 V

  • Current - Continuous Drain (Id) @ 25°C:

    810mA (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    900mOhm @ 420mA, 10V

  • Vgs(th) (Max) @ Id:

    2.6V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    0.36 nC @ 4.5 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    19 pF @ 15 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    530mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    X1-DFN1006-3

  • Package / Case:

    3-UFDFN

Stock:

0

1

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