Part Number:
PSMN2R8-40YSD-2X
Manufacturer:
Nexperia
Description:
PSMN2R8-40YSD/SOT669/LFPAK
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
160A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
62 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4507 pF @ 20 V
FET Feature:
Schottky Diode (Body)
Power Dissipation (Max):
147W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8
Package / Case:
SC-100, SOT-669
Stock:
0
Part Number:
SQS460EN-T1_BE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 60V 8A PPAK1212-8
Series:
TrenchFET®
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
36mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
755 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
39W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® 1212-8
Package / Case:
PowerPAK® 1212-8
Stock:
184077
Part Number:
SQJ431AEP-T1_BE3
Manufacturer:
Vishay Siliconix
Description:
P-CHANNEL 200-V (D-S) 175C MOSFE
Series:
TrenchFET®
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
305mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
85 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3700 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
68W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® SO-8
Package / Case:
PowerPAK® SO-8
Stock:
15627
Part Number:
RSR025N05TL
Manufacturer:
Rohm Semiconductor
Description:
NCH 45V 2.5A SMALL SIGNAL MOSFET
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
45 V
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Rds On (Max) @ Id, Vgs:
100mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
3.6 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
260 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
700mW (Ta)
Operating Temperature:
150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
TSMT3
Package / Case:
SC-96
Stock:
8625
Part Number:
IRF9Z14PBF-BE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 60V 6.7A TO220AB
Series:
-
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
270 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
43W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Package / Case:
TO-220-3
Stock:
4293
Part Number:
DMN3066LQ-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 25V~30V SOT23 T&R
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
67mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
4.1 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
353 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
810mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Package / Case:
TO-236-3, SC-59, SOT-23-3
Stock:
0
Part Number:
CSD17507Q5AT
Manufacturer:
Texas Instruments
Description:
IC CLOCK BUFFER
Series:
NexFET™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
13A (Ta), 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
10.8mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
3.6 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
530 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
3W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
8-VSONP (5x6)
Package / Case:
8-PowerTDFN
Stock:
2250
Part Number:
SIDR578EP-T1-RE3
Manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 150 V (D-S) 175C MOSFE
Series:
TrenchFET® Gen V
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
17.4A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Rds On (Max) @ Id, Vgs:
8.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
49 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2540 pF @ 75 V
FET Feature:
-
Power Dissipation (Max):
7.5W (Ta), 150W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® SO-8DC
Package / Case:
PowerPAK® SO-8
Stock:
0
Part Number:
RQ7G080ATTCR
Manufacturer:
Rohm Semiconductor
Description:
PCH -40V -8A SMALL SIGNAL POWER
Series:
-
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
18.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
37 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2060 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
1.1W (Ta)
Operating Temperature:
150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
TSMT8
Package / Case:
8-SMD, Flat Lead
Stock:
13065
Part Number:
DMP31D7LFB-7B
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 25V~30V X1-DFN1006
Series:
-
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
810mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
900mOhm @ 420mA, 10V
Vgs(th) (Max) @ Id:
2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.36 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
19 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
530mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
X1-DFN1006-3
Package / Case:
3-UFDFN
Stock:
0
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