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FETs, MOSFETs - Single (41758)

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Part Number:

BSC889N03MSG

Manufacturer:

Infineon Technologies

Description:

N-CHANNEL POWER MOSFET

  • Series:

    OptiMOS™ 3

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30 V

  • Current - Continuous Drain (Id) @ 25°C:

    12A (Ta), 44A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    9.1mOhm @ 30A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    20 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1500 pF @ 15 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    2.5W (Ta), 28W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PG-TSDSON-8

  • Package / Case:

    8-PowerTDFN

Stock:

0

1

Part Number:

AOT66518L

Manufacturer:

Alpha & Omega Semiconductor Inc.

Description:

MOSFET N-CH 150V 30A/120A TO220

  • Series:

    AlphaSGT™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    150 V

  • Current - Continuous Drain (Id) @ 25°C:

    30A (Ta), 120A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    8V, 10V

  • Rds On (Max) @ Id, Vgs:

    5mOhm @ 20A, 10V

  • Vgs(th) (Max) @ Id:

    3.7V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    115 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    6460 pF @ 75 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    10W (Ta), 375W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220

  • Package / Case:

    TO-220-3

Stock:

2511

1

Part Number:

DMP4026LSSQ-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET BVDSS: 31V~40V SO-8 T&R 2

  • Series:

    -

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40 V

  • Current - Continuous Drain (Id) @ 25°C:

    7.2A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    25mOhm @ 3A, 10V

  • Vgs(th) (Max) @ Id:

    1.8V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    45 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2083 pF @ 20 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    1.5W (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    8-SO

  • Package / Case:

    8-SOIC (0.154", 3.90mm Width)

Stock:

0

1

Part Number:

MSJPF11N65A-BP

Manufacturer:

Micro Commercial Co

Description:

N-CHANNEL MOSFET,TO-220F

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    650 V

  • Current - Continuous Drain (Id) @ 25°C:

    11A

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    380mOhm @ 3.2A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    21 nC @ 10 V

  • Vgs (Max):

    ±30V

  • Input Capacitance (Ciss) (Max) @ Vds:

    763 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    31.3W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220F

  • Package / Case:

    TO-220-3 Full Pack

Stock:

14550

1

Part Number:

IXTA30N25L2

Manufacturer:

IXYS

Description:

MOSFET N-CH 250V 30A TO263

  • Series:

    Linear L2™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    250 V

  • Current - Continuous Drain (Id) @ 25°C:

    30A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    140mOhm @ 15A, 10V

  • Vgs(th) (Max) @ Id:

    4.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    130 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    3200 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    355W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    TO-263 (D2PAK)

  • Package / Case:

    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Stock:

0

1

Part Number:

DMP610DLQ-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET BVDSS: 41V~60V SOT23 T&R

  • Series:

    -

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60 V

  • Current - Continuous Drain (Id) @ 25°C:

    186mA (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V

  • Rds On (Max) @ Id, Vgs:

    10Ohm @ 100mA, 5V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    0.5 nC @ 5 V

  • Vgs (Max):

    ±30V

  • Input Capacitance (Ciss) (Max) @ Vds:

    40 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    520mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    SOT-23-3

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

Stock:

0

1

Part Number:

MCG04N10A-TP

Manufacturer:

Micro Commercial Co

Description:

MOSFET N-CH 100V 4A DFN3030-8

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100 V

  • Current - Continuous Drain (Id) @ 25°C:

    4A (Tj)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    105mOhm @ 4.5A, 10V

  • Vgs(th) (Max) @ Id:

    2.6V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    11 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    612 pF @ 50 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    25W

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DFN3030-8

  • Package / Case:

    8-PowerWDFN

Stock:

2064

1

Part Number:

IRFP4468PBFXKMA1

Manufacturer:

Infineon Technologies

Description:

TRENCH >=100V PG-TO247-3

  • Series:

    HEXFET®

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100 V

  • Current - Continuous Drain (Id) @ 25°C:

    290A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    2.6mOhm @ 180A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    540 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    19860 pF @ 50 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    520W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-247AC

  • Package / Case:

    TO-247-3

Stock:

1149

1

Part Number:

DMN2991UFO-7B

Manufacturer:

Diodes Incorporated

Description:

MOSFET BVDSS: 8V~24V X2-DFN0604-

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    20 V

  • Current - Continuous Drain (Id) @ 25°C:

    540mA (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    1.5V, 4.5V

  • Rds On (Max) @ Id, Vgs:

    990mOhm @ 100mA, 4.5V

  • Vgs(th) (Max) @ Id:

    1V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    0.35 nC @ 4.5 V

  • Vgs (Max):

    ±8V

  • Input Capacitance (Ciss) (Max) @ Vds:

    21.5 pF @ 15 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    440mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    X2-DFN0604-3

  • Package / Case:

    3-XFDFN

Stock:

30000

1

Part Number:

IPTG018N08NM5ATMA1

Manufacturer:

Infineon Technologies

Description:

TRENCH 40<-<100V PG-HSOG-8

  • Series:

    OptiMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    80 V

  • Current - Continuous Drain (Id) @ 25°C:

    32A (Ta), 253A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    6V, 10V

  • Rds On (Max) @ Id, Vgs:

    1.8mOhm @ 150A, 10V

  • Vgs(th) (Max) @ Id:

    3.8V @ 159µA

  • Gate Charge (Qg) (Max) @ Vgs:

    127 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    9200 pF @ 40 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    3.8W (Ta), 231W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PG-HSOG-8-1

  • Package / Case:

    8-PowerSMD, Gull Wing

Stock:

0

1

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