Part Number:
BSC889N03MSG
Manufacturer:
Infineon Technologies
Description:
N-CHANNEL POWER MOSFET
Series:
OptiMOS™ 3
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
12A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
9.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1500 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 28W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TSDSON-8
Package / Case:
8-PowerTDFN
Stock:
0
Part Number:
AOT66518L
Manufacturer:
Alpha & Omega Semiconductor Inc.
Description:
MOSFET N-CH 150V 30A/120A TO220
Series:
AlphaSGT™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
30A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
8V, 10V
Rds On (Max) @ Id, Vgs:
5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
115 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6460 pF @ 75 V
FET Feature:
-
Power Dissipation (Max):
10W (Ta), 375W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220
Package / Case:
TO-220-3
Stock:
2511
Part Number:
DMP4026LSSQ-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 31V~40V SO-8 T&R 2
Series:
-
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
25mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2083 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
1.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Stock:
0
Part Number:
MSJPF11N65A-BP
Manufacturer:
Micro Commercial Co
Description:
N-CHANNEL MOSFET,TO-220F
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
11A
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
380mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
21 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
763 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
31.3W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F
Package / Case:
TO-220-3 Full Pack
Stock:
14550
Part Number:
IXTA30N25L2
Manufacturer:
IXYS
Description:
MOSFET N-CH 250V 30A TO263
Series:
Linear L2™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
250 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
140mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3200 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
355W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stock:
0
Part Number:
DMP610DLQ-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 41V~60V SOT23 T&R
Series:
-
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
186mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
0.5 nC @ 5 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
40 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
520mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Package / Case:
TO-236-3, SC-59, SOT-23-3
Stock:
0
Part Number:
MCG04N10A-TP
Manufacturer:
Micro Commercial Co
Description:
MOSFET N-CH 100V 4A DFN3030-8
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
4A (Tj)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
105mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:
2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
612 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
25W
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DFN3030-8
Package / Case:
8-PowerWDFN
Stock:
2064
Part Number:
IRFP4468PBFXKMA1
Manufacturer:
Infineon Technologies
Description:
TRENCH >=100V PG-TO247-3
Series:
HEXFET®
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
290A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.6mOhm @ 180A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
540 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
19860 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
520W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AC
Package / Case:
TO-247-3
Stock:
1149
Part Number:
DMN2991UFO-7B
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 8V~24V X2-DFN0604-
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Rds On (Max) @ Id, Vgs:
990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.35 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
21.5 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
440mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
X2-DFN0604-3
Package / Case:
3-XFDFN
Stock:
30000
Part Number:
IPTG018N08NM5ATMA1
Manufacturer:
Infineon Technologies
Description:
TRENCH 40<-<100V PG-HSOG-8
Series:
OptiMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
32A (Ta), 253A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
1.8mOhm @ 150A, 10V
Vgs(th) (Max) @ Id:
3.8V @ 159µA
Gate Charge (Qg) (Max) @ Vgs:
127 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
9200 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 231W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
PG-HSOG-8-1
Package / Case:
8-PowerSMD, Gull Wing
Stock:
0
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