FETs, MOSFETs - Single (41758)

Series:

HEXFET®

FET Type:

-

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

23A

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

117mOhm @ 23A, 10V

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

Surface Mount

Supplier Device Package:

Die

Package / Case:

Die

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V, 15V

Rds On (Max) @ Id, Vgs:

204mOhm @ 4A, 15V

Vgs(th) (Max) @ Id:

6.5V @ 600µA

Gate Charge (Qg) (Max) @ Vgs:

27 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

1250 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

61W (Tc)

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220FM

Package / Case:

TO-220-3 Full Pack

Series:

CoolSiC™

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

41mOhm @ 25A, 18V

Vgs(th) (Max) @ Id:

5.7V @ 11.5mA

Gate Charge (Qg) (Max) @ Vgs:

63 nC @ 18 V

Vgs (Max):

+18V, -15V

Input Capacitance (Ciss) (Max) @ Vds:

2290 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

300W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-7-12

Package / Case:

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Series:

TrenchFET®

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

12 V

Current - Continuous Drain (Id) @ 25°C:

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 4.5V

Rds On (Max) @ Id, Vgs:

19mOhm @ 4.5A, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

33 nC @ 4.5 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

3070 pF @ 6 V

FET Feature:

-

Power Dissipation (Max):

13.6W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount, Wettable Flank

Supplier Device Package:

PowerPAK®SC-70W-6

Package / Case:

PowerPAK® SC-70-6

Series:

OptiMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

80 V

Current - Continuous Drain (Id) @ 25°C:

220A (Tj)

Drive Voltage (Max Rds On, Min Rds On):

6V, 10V

Rds On (Max) @ Id, Vgs:

2.1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:

3.8V @ 120µA

Gate Charge (Qg) (Max) @ Vgs:

105 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

7219 pF @ 40 V

FET Feature:

-

Power Dissipation (Max):

211W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-HSOF-5-4

Package / Case:

5-PowerSFN

Series:

CoolSiC™

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

63mOhm @ 16A, 18V

Vgs(th) (Max) @ Id:

5.7V @ 7.5mA

Gate Charge (Qg) (Max) @ Vgs:

46 nC @ 18 V

Vgs (Max):

+18V, -15V

Input Capacitance (Ciss) (Max) @ Vds:

1527 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

227W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-7-12

Package / Case:

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

13A (Ta), 52A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

8.5mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

14.3 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

817 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

2.3W (Ta), 37W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

8-PDFN (3.1x3.1)

Package / Case:

8-PowerWDFN

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

580mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

900mOhm @ 420mA, 10V

Vgs(th) (Max) @ Id:

2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

0.36 nC @ 4.5 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

19 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

430mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-3

Package / Case:

TO-236-3, SC-59, SOT-23-3

Series:

-

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

CoolSiC™

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

294mOhm @ 4A, 18V

Vgs(th) (Max) @ Id:

5.7V @ 1.6mA

Gate Charge (Qg) (Max) @ Vgs:

9.4 nC @ 18 V

Vgs (Max):

+18V, -15V

Input Capacitance (Ciss) (Max) @ Vds:

312 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

83W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-7-12

Package / Case:

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA