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DMTH10H2M5STLWQ-13

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付款方式：

Part Number

DMTH10H2M5STLWQ-13

Manufacturer

Diodes Incorporated

Description

MOSFET BVDSS: 61V~100V,POWERDI10

Lifecycle

Active

RoHS

No RoHS Information

EDA/CAD Models

DMTH10H2M5STLWQ-13 PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:3396 pcs

运送服务：

DMTH10H2M5STLWQ-13 规格

Current - Continuous Drain (Id) @ 25°C
215A (Tc)
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
124.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
8450 pF @ 50 V
Manufacturer
Diodes Incorporated
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
8-PowerSFN
Power Dissipation (Max)
5.8W (Ta), 230.8W (Tc)
Rds On (Max) @ Id, Vgs
2.5mOhm @ 30A, 10V
Series
-
Supplier Device Package
POWERDI1012-8
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4V @ 250µA

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