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IXTA180N10T-TRL

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付款方式：

Part Number

IXTA180N10T-TRL

Manufacturer

IXYS

Description

MOSFET N-CH 100V 180A TO263

Lifecycle

Active

RoHS

No RoHS Information

EDA/CAD Models

IXTA180N10T-TRL PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:7149 pcs

运送服务：

IXTA180N10T-TRL 规格

Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
6900 pF @ 25 V
Manufacturer
IXYS
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Power Dissipation (Max)
480W (Tc)
Rds On (Max) @ Id, Vgs
6.4mOhm @ 25A, 10V
Series
Trench
Supplier Device Package
TO-263 (D2PAK)
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4.5V @ 250µA

IXTA180N10T-TRL 标签

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