FETs, MOSFETs - Single (41758)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

1.7Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:

4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

12 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

600 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

100W (Tc)

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Supplier Device Package:

DPAK

Package / Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63

Series:

U-MOSVI-H

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

32A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

7.3mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:

2.3V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:

43 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

3365 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

1.6W (Ta), 45W (Tc)

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP Advance (5x5)

Package / Case:

8-PowerVDFN

Series:

-

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

26A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V

Rds On (Max) @ Id, Vgs:

81mOhm @ 12A, 18V

Vgs(th) (Max) @ Id:

4.8V @ 6.45mA

Gate Charge (Qg) (Max) @ Vgs:

64 nC @ 18 V

Vgs (Max):

+21V, -4V

Input Capacitance (Ciss) (Max) @ Vds:

1498 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

115W

Operating Temperature:

175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-4L

Package / Case:

TO-247-4

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

5.5A (Ta), 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

38mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

8 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

266 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

2W (Ta), 19W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DFN2020MD-6

Package / Case:

6-UDFN Exposed Pad

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

800mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

290mOhm @ 400mA, 10V

Vgs(th) (Max) @ Id:

2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

1.32 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

64 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

350mW (Ta)

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-323-3A

Package / Case:

SC-70, SOT-323

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

2.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 4.5V

Rds On (Max) @ Id, Vgs:

74mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id:

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

7.7 nC @ 4.5 V

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

744 pF @ 20 V

FET Feature:

-

Power Dissipation (Max):

480mW (Ta), 4.17W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-236AB

Package / Case:

TO-236-3, SC-59, SOT-23-3

Series:

aMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

700 V

Current - Continuous Drain (Id) @ 25°C:

3.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

1.4Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:

4.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

8 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

354 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

48W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-252 (DPAK)

Package / Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

10mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

28 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1020 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

20W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DFN3333

Package / Case:

8-VDFN Exposed Pad

Series:

TrenchFET® GenIV

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

504A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

0.6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

294 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

15398 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

266W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK® SO-8SW

Package / Case:

PowerPAK® SO-8

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

15A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

5.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

42 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2311 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

1.4W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

8-SO

Package / Case:

8-SOIC (0.154", 3.90mm Width)