FETs, MOSFETs - Single (41758)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

25A (Ta), 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

2.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

100nC @ 10V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

5200pF @ 15V

FET Feature:

-

Power Dissipation (Max):

2.3W (Ta), 110W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

8-DFN-EP (5x6)

Package / Case:

8-PowerVDFN

Series:

*

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

*

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

*

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

Automotive, AEC-Q101

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

115mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Rds On (Max) @ Id, Vgs:

7.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

50pF @ 25V

FET Feature:

-

Power Dissipation (Max):

225mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-3 (TO-236)

Package / Case:

TO-236-3, SC-59, SOT-23-3

Series:

Automotive, AEC-Q101

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

115mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Rds On (Max) @ Id, Vgs:

7.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

50pF @ 25V

FET Feature:

-

Power Dissipation (Max):

225mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-3 (TO-236)

Package / Case:

TO-236-3, SC-59, SOT-23-3

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

2.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4.5V

Rds On (Max) @ Id, Vgs:

91mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id:

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

9.6nC @ 5V

Vgs (Max):

12V

Input Capacitance (Ciss) (Max) @ Vds:

800pF @ 10V

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

Die

Package / Case:

Die

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

2.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4.5V

Rds On (Max) @ Id, Vgs:

91mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id:

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

9.6nC @ 5V

Vgs (Max):

12V

Input Capacitance (Ciss) (Max) @ Vds:

800pF @ 10V

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

Die

Package / Case:

Die

Series:

*

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

*

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-