FETs, MOSFETs - Single (41758)

Series:

OptiMOS™

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

65mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:

4V @ 1.04mA

Gate Charge (Qg) (Max) @ Vgs:

39nC @ 10V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1600pF @ 30V

FET Feature:

-

Power Dissipation (Max):

83W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO252-3-313

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

Series:

OptiMOS™

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

38mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:

4V @ 1.7mA

Gate Charge (Qg) (Max) @ Vgs:

63nC @ 10V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2500pF @ 30V

FET Feature:

-

Power Dissipation (Max):

125W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO252-3-313

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

Series:

OptiMOS™

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-SOT223

Package / Case:

TO-261-3

Series:

OptiMOS™

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

1.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

250mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id:

2V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:

13.9nC @ 10V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

420pF @ 30V

FET Feature:

-

Power Dissipation (Max):

1.8W (Ta), 5W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-SOT223

Package / Case:

TO-261-3

Series:

OptiMOS™

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-SOT223

Package / Case:

TO-261-3

Series:

OptiMOS™

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO252-3-313

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

Series:

OptiMOS™

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

65mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:

4V @ 1.04mA

Gate Charge (Qg) (Max) @ Vgs:

39nC @ 10V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1600pF @ 30V

FET Feature:

-

Power Dissipation (Max):

83W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO252-3-313

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

Series:

OptiMOS™

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO252-3-313

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

Series:

OptiMOS™

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO252-3-313

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

Series:

OptiMOS™

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

250mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:

2V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:

13.8nC @ 10V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

420pF @ 30V

FET Feature:

-

Power Dissipation (Max):

28W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO252-3-313

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63