FETs, MOSFETs - Single (41758)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

250V

Current - Continuous Drain (Id) @ 25°C:

310mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.4V, 10V

Rds On (Max) @ Id, Vgs:

5Ohm @ 300mA, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

120pF @ 25V

FET Feature:

-

Power Dissipation (Max):

1W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-92-3

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

250V

Current - Continuous Drain (Id) @ 25°C:

310mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.4V, 10V

Rds On (Max) @ Id, Vgs:

5Ohm @ 300mA, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

120pF @ 25V

FET Feature:

-

Power Dissipation (Max):

1W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-92-3

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200V

Current - Continuous Drain (Id) @ 25°C:

300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.8V

Rds On (Max) @ Id, Vgs:

5Ohm @ 100mA, 2.8V

Vgs(th) (Max) @ Id:

1.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

120pF @ 25V

FET Feature:

-

Power Dissipation (Max):

1W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-92-3

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200V

Current - Continuous Drain (Id) @ 25°C:

300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.8V

Rds On (Max) @ Id, Vgs:

5Ohm @ 100mA, 2.8V

Vgs(th) (Max) @ Id:

1.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

120pF @ 25V

FET Feature:

-

Power Dissipation (Max):

1W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-92-3

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200V

Current - Continuous Drain (Id) @ 25°C:

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

180mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

63nC @ 10V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1850pF @ 25V

FET Feature:

-

Power Dissipation (Max):

136W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

77mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

65nC @ 10V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1187pF @ 25V

FET Feature:

-

Power Dissipation (Max):

100W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

110mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

40nC @ 10V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

633pF @ 25V

FET Feature:

-

Power Dissipation (Max):

79W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

*

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

*

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

*

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-