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FETs, MOSFETs - Single (41758)

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Page 32/4176

Part Number:

CP373-CTLDM303N-CT

Manufacturer:

Central Semiconductor Corp

Description:

MOSFET TRANSISTOR N-CH CHIP

  • Series:

    *

  • FET Type:

    -

  • Technology:

    -

  • Drain to Source Voltage (Vdss):

    -

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    -

  • Supplier Device Package:

    -

  • Package / Case:

    -

Stock:

303

1

Part Number:

CP373-CMPDM303NH-WN

Manufacturer:

Central Semiconductor Corp

Description:

MOSFET TRANSISTOR N-CH CHIP

  • Series:

    *

  • FET Type:

    -

  • Technology:

    -

  • Drain to Source Voltage (Vdss):

    -

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    -

  • Supplier Device Package:

    -

  • Package / Case:

    -

Stock:

309

1

Part Number:

CP373-CMPDM303NH-CT

Manufacturer:

Central Semiconductor Corp

Description:

MOSFET TRANSISTOR N-CH CHIP

  • Series:

    *

  • FET Type:

    -

  • Technology:

    -

  • Drain to Source Voltage (Vdss):

    -

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    -

  • Supplier Device Package:

    -

  • Package / Case:

    -

Stock:

288

1

Part Number:

CP373-CMPDM303-CT20

Manufacturer:

Central Semiconductor Corp

Description:

MOSFET TRANSISTOR N-CH CHIP

  • Series:

    *

  • FET Type:

    -

  • Technology:

    -

  • Drain to Source Voltage (Vdss):

    -

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    -

  • Supplier Device Package:

    -

  • Package / Case:

    -

Stock:

441

1
ISP06P005NSATMA1

Part Number:

ISP06P005NSATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET P-CH SOT223-3

  • Series:

    OptiMOS™

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    -

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PG-SOT223

  • Package / Case:

    TO-261-3

Stock:

330

1
ISP06P005LSATMA1

Part Number:

ISP06P005LSATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET P-CH SOT223-3

  • Series:

    OptiMOS™

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    -

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PG-SOT223

  • Package / Case:

    TO-261-3

Stock:

344

1
ISP06P008NSATMA1

Part Number:

ISP06P008NSATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET P-CH SOT223-3

  • Series:

    OptiMOS™

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    -

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PG-SOT223

  • Package / Case:

    TO-261-3

Stock:

397

1

Part Number:

IPD06P005NSAUMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET P-CH TO252-3

  • Series:

    OptiMOS™

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    6.5A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    250mOhm @ 6.5A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 270µA

  • Gate Charge (Qg) (Max) @ Vgs:

    10.6nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    420pF @ 30V

  • FET Feature:

    -

  • Power Dissipation (Max):

    28W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PG-TO252-3-313

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

472

1

Part Number:

IPD06P005LSAUMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET P-CH TO252-3

  • Series:

    OptiMOS™

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    6.5A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    250mOhm @ 6.5A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 270µA

  • Gate Charge (Qg) (Max) @ Vgs:

    13.8nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    420pF @ 30V

  • FET Feature:

    -

  • Power Dissipation (Max):

    28W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PG-TO252-3-313

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

422

1

Part Number:

IPD06P004NSAUMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET P-CH TO252-3

  • Series:

    OptiMOS™

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    16.4A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    90mOhm @ 16.4A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 710µA

  • Gate Charge (Qg) (Max) @ Vgs:

    27nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1100pF @ 30V

  • FET Feature:

    -

  • Power Dissipation (Max):

    63W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PG-TO252-3-313

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

308

1

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