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FETs, MOSFETs - Single (41758)

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Part Number:

PHM18NQ15T,518

Manufacturer:

NXP

Description:

MOSFET N-CH 150V 19A SOT685-1

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    150V

  • Current - Continuous Drain (Id) @ 25°C:

    19A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    75mOhm @ 12A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    26.4nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1150pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    62.5W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    8-HVSON (6x5)

  • Package / Case:

    8-VDFN Exposed Pad

Stock:

140

1

Part Number:

PHM15NQ20T,518

Manufacturer:

NXP

Description:

MOSFET N-CH 200V 17.5A 8HVSON

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    200V

  • Current - Continuous Drain (Id) @ 25°C:

    17.5A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    85mOhm @ 15A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    40nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2170pF @ 30V

  • FET Feature:

    -

  • Power Dissipation (Max):

    62.5W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    8-HVSON (6x5)

  • Package / Case:

    8-VDFN Exposed Pad

Stock:

444

1

Part Number:

PHM12NQ20T,518

Manufacturer:

NXP

Description:

MOSFET N-CH 200V 14.4A 8HVSON

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    200V

  • Current - Continuous Drain (Id) @ 25°C:

    14.4A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    130mOhm @ 12A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    26nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1230pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    62.5W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    8-HVSON (6x5)

  • Package / Case:

    8-VDFN Exposed Pad

Stock:

337

1

Part Number:

PHK4NQ20T,518

Manufacturer:

NXP

Description:

MOSFET N-CH 200V 4A SOT96-1

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    200V

  • Current - Continuous Drain (Id) @ 25°C:

    4A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    130mOhm @ 4A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    26nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1230pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    6.25W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    8-SO

  • Package / Case:

    8-SOIC (0.154", 3.90mm Width)

Stock:

391

1

Part Number:

PHK4NQ10T,518

Manufacturer:

NXP

Description:

MOSFET N-CH 100V SOT96-1

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100V

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    70mOhm @ 4A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    22nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    880pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    2.5W (Ta)

  • Operating Temperature:

    -65°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    8-SO

  • Package / Case:

    8-SOIC (0.154", 3.90mm Width)

Stock:

476

1

Part Number:

PHK12NQ10T,518

Manufacturer:

NXP

Description:

MOSFET N-CH 100V 11.6A SOT96-1

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100V

  • Current - Continuous Drain (Id) @ 25°C:

    11.6A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    28mOhm @ 6A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    35nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1965pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    8.9W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    8-SO

  • Package / Case:

    8-SOIC (0.154", 3.90mm Width)

Stock:

350

1

Part Number:

PHD98N03LT,118

Manufacturer:

NXP

Description:

MOSFET N-CH 25V 75A DPAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    5.9mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    40nC @ 5V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    3000pF @ 20V

  • FET Feature:

    -

  • Power Dissipation (Max):

    111W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

368

1

Part Number:

PHD96NQ03LT,118

Manufacturer:

NXP

Description:

MOSFET N-CH 25V 75A DPAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    4.95mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    26.7nC @ 5V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2200pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    115W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

189

1

Part Number:

PHD78NQ03LT,118

Manufacturer:

NXP

Description:

MOSFET N-CH 25V 75A DPAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    9mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    11nC @ 4.5V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    970pF @ 12V

  • FET Feature:

    -

  • Power Dissipation (Max):

    107W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

469

1

Part Number:

PHD66NQ03LT,118

Manufacturer:

NXP

Description:

MOSFET N-CH 25V 66A DPAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25V

  • Current - Continuous Drain (Id) @ 25°C:

    66A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    10.5mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    12nC @ 5V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    860pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    93W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

499

1

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