Part Number:
PHM18NQ15T,518
Manufacturer:
NXP
Description:
MOSFET N-CH 150V 19A SOT685-1
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
150V
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
75mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
26.4nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1150pF @ 25V
FET Feature:
-
Power Dissipation (Max):
62.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
8-HVSON (6x5)
Package / Case:
8-VDFN Exposed Pad
Stock:
140
Part Number:
PHM15NQ20T,518
Manufacturer:
NXP
Description:
MOSFET N-CH 200V 17.5A 8HVSON
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200V
Current - Continuous Drain (Id) @ 25°C:
17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
85mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2170pF @ 30V
FET Feature:
-
Power Dissipation (Max):
62.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
8-HVSON (6x5)
Package / Case:
8-VDFN Exposed Pad
Stock:
444
Part Number:
PHM12NQ20T,518
Manufacturer:
NXP
Description:
MOSFET N-CH 200V 14.4A 8HVSON
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200V
Current - Continuous Drain (Id) @ 25°C:
14.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
130mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
26nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1230pF @ 25V
FET Feature:
-
Power Dissipation (Max):
62.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
8-HVSON (6x5)
Package / Case:
8-VDFN Exposed Pad
Stock:
337
Part Number:
PHK4NQ20T,518
Manufacturer:
NXP
Description:
MOSFET N-CH 200V 4A SOT96-1
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200V
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
130mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
26nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1230pF @ 25V
FET Feature:
-
Power Dissipation (Max):
6.25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Stock:
391
Part Number:
PHK4NQ10T,518
Manufacturer:
NXP
Description:
MOSFET N-CH 100V SOT96-1
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
70mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
880pF @ 25V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-65°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Stock:
476
Part Number:
PHK12NQ10T,518
Manufacturer:
NXP
Description:
MOSFET N-CH 100V 11.6A SOT96-1
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
11.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
28mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
35nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1965pF @ 25V
FET Feature:
-
Power Dissipation (Max):
8.9W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Stock:
350
Part Number:
PHD98N03LT,118
Manufacturer:
NXP
Description:
MOSFET N-CH 25V 75A DPAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
5.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 5V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3000pF @ 20V
FET Feature:
-
Power Dissipation (Max):
111W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Stock:
368
Part Number:
PHD96NQ03LT,118
Manufacturer:
NXP
Description:
MOSFET N-CH 25V 75A DPAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
4.95mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
26.7nC @ 5V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2200pF @ 25V
FET Feature:
-
Power Dissipation (Max):
115W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Stock:
189
Part Number:
PHD78NQ03LT,118
Manufacturer:
NXP
Description:
MOSFET N-CH 25V 75A DPAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 4.5V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
970pF @ 12V
FET Feature:
-
Power Dissipation (Max):
107W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Stock:
469
Part Number:
PHD66NQ03LT,118
Manufacturer:
NXP
Description:
MOSFET N-CH 25V 66A DPAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
66A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
10.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 5V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
860pF @ 25V
FET Feature:
-
Power Dissipation (Max):
93W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Stock:
499
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