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FETs, MOSFETs - Single (41758)

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Part Number:

PHD63NQ03LT,118

Manufacturer:

NXP

Description:

MOSFET N-CH 30V 68.9A DPAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    68.9A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    13mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    9.6nC @ 5V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    920pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    111W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

115

1

Part Number:

PHD55N03LTA,118

Manufacturer:

NXP

Description:

MOSFET N-CH 25V 55A DPAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25V

  • Current - Continuous Drain (Id) @ 25°C:

    55A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    14mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    20nC @ 5V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    950pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    85W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

110

1

Part Number:

PHD45N03LTA,118

Manufacturer:

NXP

Description:

MOSFET N-CH 25V 40A DPAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25V

  • Current - Continuous Drain (Id) @ 25°C:

    40A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    3.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    21mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    19nC @ 5V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    700pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    65W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

450

1

Part Number:

PHD23NQ10T,118

Manufacturer:

NXP

Description:

MOSFET N-CH 100V 23A DPAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100V

  • Current - Continuous Drain (Id) @ 25°C:

    23A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    70mOhm @ 13A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    22nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1187pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    100W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

272

1

Part Number:

PHD22NQ20T,118

Manufacturer:

NXP

Description:

MOSFET N-CH 200V 21.1A DPAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    200V

  • Current - Continuous Drain (Id) @ 25°C:

    21.1A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    120mOhm @ 12A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    30.8nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1380pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    150W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

402

1

Part Number:

PHD21N06LT,118

Manufacturer:

NXP

Description:

MOSFET N-CH 55V 19A DPAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    55V

  • Current - Continuous Drain (Id) @ 25°C:

    19A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    70mOhm @ 10A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    9.4nC @ 5V

  • Vgs (Max):

    ±15V

  • Input Capacitance (Ciss) (Max) @ Vds:

    650pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    56W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

219

1

Part Number:

PHD16N03LT,118

Manufacturer:

NXP

Description:

MOSFET N-CH 30V 16A DPAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    16A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    67mOhm @ 16A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    8.5nC @ 10V

  • Vgs (Max):

    ±15V

  • Input Capacitance (Ciss) (Max) @ Vds:

    210pF @ 30V

  • FET Feature:

    -

  • Power Dissipation (Max):

    32.6W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

250

1

Part Number:

PHD14NQ20T,118

Manufacturer:

NXP

Description:

MOSFET N-CH 200V 14A DPAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    200V

  • Current - Continuous Drain (Id) @ 25°C:

    14A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    230mOhm @ 7A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    38nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1500pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    125W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

320

1

Part Number:

PHD110NQ03LT,118

Manufacturer:

NXP

Description:

MOSFET N-CH 25V 75A DPAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    4.6mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    26.7nC @ 5V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2200pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    115W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

381

1

Part Number:

PHB95NQ04LT,118

Manufacturer:

NXP

Description:

MOSFET N-CH 40V 75A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    7mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    32.7nC @ 5V

  • Vgs (Max):

    ±15V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2700pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    157W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

208

1

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