Part Number:
PHD63NQ03LT,118
Manufacturer:
NXP
Description:
MOSFET N-CH 30V 68.9A DPAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
68.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
13mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
9.6nC @ 5V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
920pF @ 25V
FET Feature:
-
Power Dissipation (Max):
111W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Stock:
115
Part Number:
PHD55N03LTA,118
Manufacturer:
NXP
Description:
MOSFET N-CH 25V 55A DPAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 5V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
950pF @ 25V
FET Feature:
-
Power Dissipation (Max):
85W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Stock:
110
Part Number:
PHD45N03LTA,118
Manufacturer:
NXP
Description:
MOSFET N-CH 25V 40A DPAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
3.5V, 10V
Rds On (Max) @ Id, Vgs:
21mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
19nC @ 5V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
700pF @ 25V
FET Feature:
-
Power Dissipation (Max):
65W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Stock:
450
Part Number:
PHD23NQ10T,118
Manufacturer:
NXP
Description:
MOSFET N-CH 100V 23A DPAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
70mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1187pF @ 25V
FET Feature:
-
Power Dissipation (Max):
100W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Stock:
272
Part Number:
PHD22NQ20T,118
Manufacturer:
NXP
Description:
MOSFET N-CH 200V 21.1A DPAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200V
Current - Continuous Drain (Id) @ 25°C:
21.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
120mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
30.8nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1380pF @ 25V
FET Feature:
-
Power Dissipation (Max):
150W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Stock:
402
Part Number:
PHD21N06LT,118
Manufacturer:
NXP
Description:
MOSFET N-CH 55V 19A DPAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55V
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
70mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
9.4nC @ 5V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
650pF @ 25V
FET Feature:
-
Power Dissipation (Max):
56W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Stock:
219
Part Number:
PHD16N03LT,118
Manufacturer:
NXP
Description:
MOSFET N-CH 30V 16A DPAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
67mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
8.5nC @ 10V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
210pF @ 30V
FET Feature:
-
Power Dissipation (Max):
32.6W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Stock:
250
Part Number:
PHD14NQ20T,118
Manufacturer:
NXP
Description:
MOSFET N-CH 200V 14A DPAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200V
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
230mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
38nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1500pF @ 25V
FET Feature:
-
Power Dissipation (Max):
125W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Stock:
320
Part Number:
PHD110NQ03LT,118
Manufacturer:
NXP
Description:
MOSFET N-CH 25V 75A DPAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
4.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
26.7nC @ 5V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2200pF @ 25V
FET Feature:
-
Power Dissipation (Max):
115W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Stock:
381
Part Number:
PHB95NQ04LT,118
Manufacturer:
NXP
Description:
MOSFET N-CH 40V 75A D2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
32.7nC @ 5V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
2700pF @ 25V
FET Feature:
-
Power Dissipation (Max):
157W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Stock:
208
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