Part Number:
PHB78NQ03LT,118
Manufacturer:
NXP
Description:
MOSFET N-CH 25V 40A D2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 4.5V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
970pF @ 12V
FET Feature:
-
Power Dissipation (Max):
107W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Stock:
116
Part Number:
PHB73N06T,118
Manufacturer:
NXP
Description:
MOSFET N-CH 60V 73A D2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
73A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
54nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2464pF @ 25V
FET Feature:
-
Power Dissipation (Max):
166W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Stock:
129
Part Number:
PHB225NQ04T,118
Manufacturer:
NXP
Description:
MOSFET N-CH 40V 75A D2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
94nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5100pF @ 25V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Stock:
162
Part Number:
PHB193NQ06T,118
Manufacturer:
NXP
Description:
MOSFET N-CH 55V 75A D2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
85.6nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5082pF @ 25V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Stock:
193
Part Number:
PHB176NQ04T,118
Manufacturer:
NXP
Description:
MOSFET N-CH 40V 75A D2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
68.9nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3620pF @ 25V
FET Feature:
-
Power Dissipation (Max):
250W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Stock:
431
Part Number:
PHB145NQ06T,118
Manufacturer:
NXP
Description:
MOSFET N-CH 55V 75A D2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
64.7nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3825pF @ 25V
FET Feature:
-
Power Dissipation (Max):
250W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Stock:
143
Part Number:
PHB143NQ04T,118
Manufacturer:
NXP
Description:
MOSFET N-CH 40V 75A D2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
5.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
52nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2840pF @ 25V
FET Feature:
-
Power Dissipation (Max):
200W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Stock:
376
Part Number:
PHB11N06LT,118
Manufacturer:
NXP
Description:
MOSFET N-CH 55V 10.3A D2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55V
Current - Continuous Drain (Id) @ 25°C:
10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
130mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
5.2nC @ 5V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
330pF @ 25V
FET Feature:
-
Power Dissipation (Max):
33W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Stock:
198
Part Number:
IRFZ44N,127
Manufacturer:
NXP
Description:
MOSFET N-CH 55V 49A TO220AB
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55V
Current - Continuous Drain (Id) @ 25°C:
49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
22mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
62nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1800pF @ 25V
FET Feature:
-
Power Dissipation (Max):
110W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Package / Case:
TO-220-3
Stock:
387
Part Number:
IRFZ24N,127
Manufacturer:
NXP
Description:
MOSFET N-CH 55V 17A TO220AB
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55V
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
70mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
19nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
500pF @ 25V
FET Feature:
-
Power Dissipation (Max):
45W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Package / Case:
TO-220-3
Stock:
351
每日获取来自全球众多供应商的最新优惠资讯