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FETs, MOSFETs - Single (41758)

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Part Number:

PHB78NQ03LT,118

Manufacturer:

NXP

Description:

MOSFET N-CH 25V 40A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25V

  • Current - Continuous Drain (Id) @ 25°C:

    40A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    9mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    11nC @ 4.5V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    970pF @ 12V

  • FET Feature:

    -

  • Power Dissipation (Max):

    107W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

116

1

Part Number:

PHB73N06T,118

Manufacturer:

NXP

Description:

MOSFET N-CH 60V 73A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    73A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    14mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    54nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2464pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    166W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

129

1

Part Number:

PHB225NQ04T,118

Manufacturer:

NXP

Description:

MOSFET N-CH 40V 75A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    3.1mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    94nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    5100pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    300W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

162

1

Part Number:

PHB193NQ06T,118

Manufacturer:

NXP

Description:

MOSFET N-CH 55V 75A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    55V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    4mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    85.6nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    5082pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    300W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

193

1

Part Number:

PHB176NQ04T,118

Manufacturer:

NXP

Description:

MOSFET N-CH 40V 75A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    4.3mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    68.9nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    3620pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    250W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

431

1

Part Number:

PHB145NQ06T,118

Manufacturer:

NXP

Description:

MOSFET N-CH 55V 75A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    55V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    6mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    64.7nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    3825pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    250W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

143

1

Part Number:

PHB143NQ04T,118

Manufacturer:

NXP

Description:

MOSFET N-CH 40V 75A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    5.2mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    52nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2840pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    200W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

376

1

Part Number:

PHB11N06LT,118

Manufacturer:

NXP

Description:

MOSFET N-CH 55V 10.3A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    55V

  • Current - Continuous Drain (Id) @ 25°C:

    10.3A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    130mOhm @ 5.5A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    5.2nC @ 5V

  • Vgs (Max):

    ±15V

  • Input Capacitance (Ciss) (Max) @ Vds:

    330pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    33W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

198

1

Part Number:

IRFZ44N,127

Manufacturer:

NXP

Description:

MOSFET N-CH 55V 49A TO220AB

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    55V

  • Current - Continuous Drain (Id) @ 25°C:

    49A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    22mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    62nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1800pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    110W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220AB

  • Package / Case:

    TO-220-3

Stock:

387

1

Part Number:

IRFZ24N,127

Manufacturer:

NXP

Description:

MOSFET N-CH 55V 17A TO220AB

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    55V

  • Current - Continuous Drain (Id) @ 25°C:

    17A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    70mOhm @ 10A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    19nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    500pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    45W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220AB

  • Package / Case:

    TO-220-3

Stock:

351

1

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