FETs, MOSFETs - Single (41758)

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

37mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

17nC @ 5V

Vgs (Max):

±15V

Input Capacitance (Ciss) (Max) @ Vds:

1280pF @ 25V

FET Feature:

-

Power Dissipation (Max):

97W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

10.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

150mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

5.8nC @ 10V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

250pF @ 25V

FET Feature:

-

Power Dissipation (Max):

33W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

3.1mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

94nC @ 10V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

5100pF @ 25V

FET Feature:

-

Power Dissipation (Max):

300W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

2.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

93.6nC @ 5V

Vgs (Max):

±15V

Input Capacitance (Ciss) (Max) @ Vds:

7880pF @ 25V

FET Feature:

-

Power Dissipation (Max):

300W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Rds On (Max) @ Id, Vgs:

70mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

9.4nC @ 5V

Vgs (Max):

±15V

Input Capacitance (Ciss) (Max) @ Vds:

650pF @ 25V

FET Feature:

-

Power Dissipation (Max):

56W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

85.6nC @ 10V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

5082pF @ 25V

FET Feature:

-

Power Dissipation (Max):

300W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

4.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

68.9nC @ 10V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

3620pF @ 25V

FET Feature:

-

Power Dissipation (Max):

250W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

64nC @ 5V

Vgs (Max):

±15V

Input Capacitance (Ciss) (Max) @ Vds:

5345pF @ 25V

FET Feature:

-

Power Dissipation (Max):

250W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

25V

Current - Continuous Drain (Id) @ 25°C:

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Rds On (Max) @ Id, Vgs:

4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

36nC @ 5V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

3140pF @ 25V

FET Feature:

-

Power Dissipation (Max):

150W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200V

Current - Continuous Drain (Id) @ 25°C:

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

230mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

38nC @ 10V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1500pF @ 25V

FET Feature:

-

Power Dissipation (Max):

125W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3