FETs, MOSFETs - Arrays (5637)

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

50V

Current - Continuous Drain (Id) @ 25°C:

350mA (Ta)

Rds On (Max) @ Id, Vgs:

2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

1.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

42.3pF @ 25V

Power - Max:

300mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

6-TSSOP, SC-88, SOT-363

Supplier Device Package:

SOT-363

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

2.7A (Ta)

Rds On (Max) @ Id, Vgs:

95mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id:

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

6.8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

287pF @ 15V

Power - Max:

1.08W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package:

TSOT-26

Series:

TrenchFET®

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

80V

Current - Continuous Drain (Id) @ 25°C:

10A (Ta), 36A (Tc)

Rds On (Max) @ Id, Vgs:

19mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

23nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

950pF @ 40V

Power - Max:

4.5W (Ta), 56.8W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

12-PowerPair™

Supplier Device Package:

PowerPAIR® 3x3FS

Series:

-

FET Type:

-

FET Feature:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

-

Power - Max:

-

Operating Temperature:

-

Mounting Type:

-

Package / Case:

-

Supplier Device Package:

-

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1700V (1.7kV)

Current - Continuous Drain (Id) @ 25°C:

353A (Tc)

Rds On (Max) @ Id, Vgs:

7.5mOhm @ 180A, 20V

Vgs(th) (Max) @ Id:

3.3V @ 15mA

Gate Charge (Qg) (Max) @ Vgs:

1068nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

19800pF @ 1000V

Power - Max:

1642W (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

-

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1700V (1.7kV)

Current - Continuous Drain (Id) @ 25°C:

179A (Tc)

Rds On (Max) @ Id, Vgs:

15mOhm @ 90A, 20V

Vgs(th) (Max) @ Id:

3.2V @ 7.5mA

Gate Charge (Qg) (Max) @ Vgs:

534nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

9900pF @ 1000V

Power - Max:

843W (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

-

Series:

TrenchMOS™

FET Type:

MOSFET (Metal Oxide)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

42A (Ta)

Rds On (Max) @ Id, Vgs:

13.6mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

19.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1160pF @ 25V

Power - Max:

46W (Ta)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-1205, 8-LFPAK56

Supplier Device Package:

LFPAK56D

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

760mA (Ta)

Rds On (Max) @ Id, Vgs:

1Ohm @ 400mA, 4.5V

Vgs(th) (Max) @ Id:

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

1.6nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:

54pF @ 15V

Power - Max:

500mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package:

TSOT-26

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

6A (Ta), 3.5A (Ta)

Rds On (Max) @ Id, Vgs:

25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA, 1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

12.3nC @ 10V, 15nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:

486pF @ 10V, 642pF @ 10V

Power - Max:

700mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

6-UDFN Exposed Pad

Supplier Device Package:

U-DFN2020-6 (Type B)

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

11A (Ta)

Rds On (Max) @ Id, Vgs:

32mOhm @ 7A, 10V, 33mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

11nC @ 10V, 17nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

390pF @ 20V, 1080pF @ 20V

Power - Max:

2.1W (Tj), 2.3W (Tj)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package:

8-SOP