FETs, MOSFETs - Arrays (5637)

Series:

-

FET Type:

-

FET Feature:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

-

Power - Max:

-

Operating Temperature:

-

Mounting Type:

-

Package / Case:

-

Supplier Device Package:

-

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

733A (Tc)

Rds On (Max) @ Id, Vgs:

3.5mOhm @ 360A, 20V

Vgs(th) (Max) @ Id:

2.8V @ 9mA

Gate Charge (Qg) (Max) @ Vgs:

2088nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

27000pF @1000V

Power - Max:

2.97kW (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

SP6C

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

180mA (Ta)

Rds On (Max) @ Id, Vgs:

6Ohm @ 115mA, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

0.87nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

22pF @ 25V

Power - Max:

300mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

6-TSSOP, SC-88, SOT-363

Supplier Device Package:

SOT-363

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

4.6A (Ta), 3.2A (Ta)

Rds On (Max) @ Id, Vgs:

35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

3.6nC @ 4.5V, 5.9nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

369pF @ 10V, 440pF @ 10V

Power - Max:

700mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package:

TSOT-26

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

750mA (Ta), 600mA (Ta)

Rds On (Max) @ Id, Vgs:

450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

0.6nC @ 4.5V, 0.7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

42pF @ 16V, 49pF @ 16V

Power - Max:

290mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

6-TSSOP, SC-88, SOT-363

Supplier Device Package:

SOT-363

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

20A

Rds On (Max) @ Id, Vgs:

22mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

16nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1051pF @ 50V

Power - Max:

17W

Operating Temperature:

-55°C ~ 150°C

Mounting Type:

Surface Mount

Package / Case:

8-PowerVDFN

Supplier Device Package:

DFN5060-8D

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

500mA (Ta), 360mA (Ta)

Rds On (Max) @ Id, Vgs:

1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA, 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

0.3nC @ 4.5V, 0.28nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

30pF @ 25V, 25pF @ 25V

Power - Max:

450mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-563, SOT-666

Supplier Device Package:

SOT-563

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1700V (1.7kV)

Current - Continuous Drain (Id) @ 25°C:

523A (Tc)

Rds On (Max) @ Id, Vgs:

5mOhm @ 270A, 20V

Vgs(th) (Max) @ Id:

3.3V @ 22.5mA

Gate Charge (Qg) (Max) @ Vgs:

1602nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

29700pF @ 1000V

Power - Max:

2.4kW (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

-

Series:

CoolSiC™

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

62.5A (Tc)

Rds On (Max) @ Id, Vgs:

11.7mOhm @ 62.5A, 18V

Vgs(th) (Max) @ Id:

5.15V @ 28mA

Gate Charge (Qg) (Max) @ Vgs:

200nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds:

6050pF @ 800V

Power - Max:

-

Operating Temperature:

-

Mounting Type:

-

Package / Case:

-

Supplier Device Package:

-

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

760mA (Ta)

Rds On (Max) @ Id, Vgs:

1Ohm @ 400mA, 4.5V

Vgs(th) (Max) @ Id:

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

1.6nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:

54pF @ 15V

Power - Max:

500mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package:

TSOT-26