FETs, MOSFETs - Arrays (5637)

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

7.2A (Tc)

Rds On (Max) @ Id, Vgs:

19mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

24nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1150pF @ 15V

Power - Max:

1.6W

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

6-WFDFN Exposed Pad

Supplier Device Package:

6-DFN-EP (2x5)

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

10A (Ta)

Rds On (Max) @ Id, Vgs:

18mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

32nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1050pF @ 15V

Power - Max:

3.1W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

6-WFDFN Exposed Pad

Supplier Device Package:

6-DFN-EP (2x5)

Series:

OptiMOS™

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

60A (Tj)

Rds On (Max) @ Id, Vgs:

5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:

3V @ 13µA

Gate Charge (Qg) (Max) @ Vgs:

17nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1027pF @ 25V

Power - Max:

52W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-PowerVDFN

Supplier Device Package:

PG-TDSON-8-57

Series:

TrenchPLUS

FET Type:

MOSFET (Metal Oxide)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

65V

Current - Continuous Drain (Id) @ 25°C:

11.6A (Tc)

Rds On (Max) @ Id, Vgs:

15.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

30.8nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

2660pF @ 25V

Power - Max:

4.4W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

20-SOIC (0.295", 7.50mm Width)

Supplier Device Package:

20-SO

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

79A

Rds On (Max) @ Id, Vgs:

31mOhm @ 40A, 20V

Vgs(th) (Max) @ Id:

2.8V @ 3mA

Gate Charge (Qg) (Max) @ Vgs:

232nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

3020pF @ 1000V

Power - Max:

310W

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

-

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

8.5A (Ta), 23A (Tc)

Rds On (Max) @ Id, Vgs:

27mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

7.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

460pF @ 30V

Power - Max:

3W (Ta), 21W (Tc)

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-PowerTDFN

Supplier Device Package:

8-HSOP

Series:

TrenchFET®

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

15A (Tc)

Rds On (Max) @ Id, Vgs:

56.2mOhm @ 3.7A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

12nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

446pF @ 30V

Power - Max:

34W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

PowerPAK® SO-8 Dual

Supplier Device Package:

PowerPAK® SO-8 Dual

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

700V

Current - Continuous Drain (Id) @ 25°C:

538A (Tc)

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

-

Power - Max:

-

Operating Temperature:

-

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

SP6C

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

18A (Tc)

Rds On (Max) @ Id, Vgs:

36mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

11.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

683pF @ 50V

Power - Max:

1W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-PowerVDFN

Supplier Device Package:

PowerDI3333-8 (Type UXC)

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

700V

Current - Continuous Drain (Id) @ 25°C:

52A (Tc), 110A (Tc)

Rds On (Max) @ Id, Vgs:

44mOhm @ 30A, 20V, 19mOhm @ 40A, 20V

Vgs(th) (Max) @ Id:

2.7V @ 2mA, 2.4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs:

99nC @ 20V, 215nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

2010pF @ 700V, 4500pF @ 700V

Power - Max:

141W (Tc), 292W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

-