Part Number:
SP8M6HZGTB
Manufacturer:
Rohm Semiconductor
Description:
MOSFET N/P-CH 30V 5A/3.5A 8SOP
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
5A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs:
51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
3.9nC @ 5V, 5.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:
230pF @ 10V, 490pF @ 10V
Power - Max:
2W (Ta)
Operating Temperature:
150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
8-SOP
Stock:
7458
Part Number:
MSCSM120AM16CT1AG
Manufacturer:
Microchip Technology
Description:
SIC 2N-CH 1200V 173A SP1F
Series:
-
FET Type:
Silicon Carbide (SiC)
FET Feature:
-
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
173A (Tc)
Rds On (Max) @ Id, Vgs:
16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id:
2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:
464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
6040pF @ 1000V
Power - Max:
745W (Tc)
Operating Temperature:
-40°C ~ 175°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
SP1F
Stock:
0
Part Number:
MSCSM70DUM10T3AG
Manufacturer:
Microchip Technology
Description:
SIC 2N-CH 700V 241A SP3F
Series:
-
FET Type:
Silicon Carbide (SiC)
FET Feature:
-
Drain to Source Voltage (Vdss):
700V
Current - Continuous Drain (Id) @ 25°C:
241A (Tc)
Rds On (Max) @ Id, Vgs:
9.5mOhm @ 80A, 20V
Vgs(th) (Max) @ Id:
2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:
430nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
9000pF @ 700V
Power - Max:
690W (Tc)
Operating Temperature:
-40°C ~ 175°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
SP3F
Stock:
30
Part Number:
SIZF928DT-T1-GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET 2N-CH 30V 33A 8PWRPAIR
Series:
TrenchFET® Gen IV
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs:
2.45mOhm @ 10A, 10V, 750µOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-PowerWDFN
Supplier Device Package:
8-PowerPair® (6x5)
Stock:
18192
Part Number:
DMN22M5UCA10-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 2N-CH 24V X4-DSN3221-10
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
24V
Current - Continuous Drain (Id) @ 25°C:
16.5A (Ta)
Rds On (Max) @ Id, Vgs:
4mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:
1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
40.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
3490pF @ 12V
Power - Max:
960mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
10-SMD, No Lead
Supplier Device Package:
X4-DSN3221-10
Stock:
0
Part Number:
MSCSM170TAM45CT3AG
Manufacturer:
Microchip Technology
Description:
SIC 6N-CH 1700V 64A
Series:
-
FET Type:
Silicon Carbide (SiC)
FET Feature:
-
Drain to Source Voltage (Vdss):
1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C:
64A (Tc)
Rds On (Max) @ Id, Vgs:
45mOhm @ 30A, 20V
Vgs(th) (Max) @ Id:
3.2V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:
178nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
3300pF @ 1000V
Power - Max:
319W (Tc)
Operating Temperature:
-40°C ~ 175°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
-
Stock:
0
Part Number:
TPC8227-H-LQ
Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET 2N-CH 40V 5.1A 8SOP
Series:
U-MOSVI-H
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
5.1A
Rds On (Max) @ Id, Vgs:
33mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id:
2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
640pF @ 10V
Power - Max:
1.5W (Ta)
Operating Temperature:
150°C
Mounting Type:
Surface Mount
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
8-SOP
Stock:
0
Part Number:
SIL6321-TP
Manufacturer:
Micro Commercial Co
Description:
MOSFET N/P-CH 30V 1A SOT23-6L
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
1A
Rds On (Max) @ Id, Vgs:
320mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:
1.4V @ 250µA, 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
1155pF @ 15V, 1050pF @ 15V
Power - Max:
1W
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-23-6
Supplier Device Package:
SOT-23-6L
Stock:
0
Part Number:
TSM8588CV-RGG
Manufacturer:
Taiwan Semiconductor Corporation
Description:
-60V, -4.5A, COMPLEMENTARY P-CHA
Series:
-
FET Type:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
30000
Part Number:
MCACD12NP10YHE3-TP
Manufacturer:
Micro Commercial Co
Description:
MOSFET
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
40A (Tc), 12A (Tc)
Rds On (Max) @ Id, Vgs:
24mOhm @ 20A, 10V, 115mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V, 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1270pF @ 25V, 1120pF @ 25V
Power - Max:
104W (Tj), 69W (Tj)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-PowerLDFN
Supplier Device Package:
PDFN5060-8D
Stock:
0
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