Part Number:
SI1902DL-T1-BE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET 2N-CH 20V 0.66A SC70-6
Series:
TrenchFET®
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
660mA (Ta)
Rds On (Max) @ Id, Vgs:
385mOhm @ 660mA, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
270mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
SC-70-6
Stock:
8892
Part Number:
DMN62D2UVQ-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 41V~60V SOT563 T&R
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
450mA (Ta)
Rds On (Max) @ Id, Vgs:
2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
41pF @ 30V
Power - Max:
500µW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
SOT-563
Stock:
0
Part Number:
STL105DN4LF7AG
Manufacturer:
STMicroelectronics
Description:
MOSFET 2N-CH 40V 40A POWERFLAT
Series:
STripFET™ F7
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
27.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1594pF @ 25V
Power - Max:
94W
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-PowerVDFN
Supplier Device Package:
PowerFlat™ (5x6)
Stock:
0
Part Number:
SP8M3HZGTB
Manufacturer:
Rohm Semiconductor
Description:
MOSFET N/P-CH 30V 5A/4.5A 8SOP
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
5A (Ta), 4.5A (Ta)
Rds On (Max) @ Id, Vgs:
51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
3.9nC @ 5V, 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:
230pF @ 10V, 850pF @ 10V
Power - Max:
2W (Ta)
Operating Temperature:
150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
8-SOP
Stock:
6975
Part Number:
MSCSM120AM042CD3AG
Manufacturer:
Microchip Technology
Description:
SIC 2N-CH 1200V 495A D3
Series:
-
FET Type:
Silicon Carbide (SiC)
FET Feature:
-
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
495A (Tc)
Rds On (Max) @ Id, Vgs:
5.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id:
2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs:
1392nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
18.1pF @ 1000V
Power - Max:
2.031kW (Tc)
Operating Temperature:
-40°C ~ 175°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
D3
Stock:
0
Part Number:
DMN62D2UDWQ-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 41V~60V SOT363 T&R
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
340mA (Ta)
Rds On (Max) @ Id, Vgs:
2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
41pF @ 30V
Power - Max:
300mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
SOT-363
Stock:
0
Part Number:
MSCSM120DDUM16TBL3NG
Manufacturer:
Microchip Technology
Description:
SIC 4N-CH 1200V 150A
Series:
-
FET Type:
Silicon Carbide (SiC)
FET Feature:
-
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
150A
Rds On (Max) @ Id, Vgs:
16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id:
2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs:
464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
6040pF @ 1000V
Power - Max:
560W
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
-
Stock:
0
Part Number:
IRF8910TRPBF-1
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 20V 10A 8SO
Series:
HEXFET®
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Rds On (Max) @ Id, Vgs:
13.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
960pF @ 10V
Power - Max:
2W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
8-SO
Stock:
0
Part Number:
MSCSM70HM05CAG
Manufacturer:
Microchip Technology
Description:
SIC MOSFET
Series:
-
FET Type:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
0
Part Number:
MCGD30P02-TP
Manufacturer:
Micro Commercial Co
Description:
MOSFET 2P-CH 20V 30A DFN
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
30A (Ta)
Rds On (Max) @ Id, Vgs:
19mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
72.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
2992pF @ 10V
Power - Max:
21W
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-PowerVDFN
Supplier Device Package:
DFN3333-D
Stock:
29760
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