FETs, MOSFETs - Arrays (5637)

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

238mA (Ta)

Rds On (Max) @ Id, Vgs:

8Ohm @ 100mA, 5V

Vgs(th) (Max) @ Id:

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

0.6nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

42pF @ 30V

Power - Max:

500mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-563, SOT-666

Supplier Device Package:

SOT-563

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

9.4A (Ta), 17.1A (Tc)

Rds On (Max) @ Id, Vgs:

18mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

15.7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

808pF @ 30V

Power - Max:

2.4W (Ta), 7.9W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-PowerTDFN

Supplier Device Package:

PowerDI5060-8 (Type UXD)

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

4A (Ta)

Rds On (Max) @ Id, Vgs:

56mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

6.7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

305pF @ 50V

Power - Max:

1.1W (Ta)

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-SMD, Flat Lead

Supplier Device Package:

TSMT8

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

6A (Ta)

Rds On (Max) @ Id, Vgs:

30mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

10.1nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

520pF @ 10V

Power - Max:

1.4W (Ta)

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package:

8-SOP

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV), 700V

Current - Continuous Drain (Id) @ 25°C:

317A (Tc), 227A (Tc)

Rds On (Max) @ Id, Vgs:

7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V

Vgs(th) (Max) @ Id:

2.8V @ 12mA, 2.4V @ 8mA

Gate Charge (Qg) (Max) @ Vgs:

928nC @ 20V, 430nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

12100pF @ 1000V, 9000pF @ 700V

Power - Max:

1.253kW (Tc), 613W (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

-

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

264A (Tc)

Rds On (Max) @ Id, Vgs:

8.7mOhm @ 240A, 20V

Vgs(th) (Max) @ Id:

4V @ 60mA

Gate Charge (Qg) (Max) @ Vgs:

690nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

11400pF @ 1000V

Power - Max:

1350W (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

SP6C LI

Series:

-

FET Type:

-

FET Feature:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

-

Power - Max:

-

Operating Temperature:

-

Mounting Type:

-

Package / Case:

-

Supplier Device Package:

-

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc)

Rds On (Max) @ Id, Vgs:

46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

3.5nC @ 10V, 17.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

150pF @ 20V, 920pF @ 20V

Power - Max:

3W (Ta), 20W (Tc)

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-PowerTDFN

Supplier Device Package:

8-HSOP

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

5A (Ta)

Rds On (Max) @ Id, Vgs:

41mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

17.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

920pF @ 20V

Power - Max:

1.1W (Ta)

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-SMD, Flat Lead

Supplier Device Package:

TSMT8

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

170A

Rds On (Max) @ Id, Vgs:

4mOhm @ 200A, 18V

Vgs(th) (Max) @ Id:

5.15V @ 80mA

Gate Charge (Qg) (Max) @ Vgs:

594nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds:

17600pF @ 800V

Power - Max:

20mW

Operating Temperature:

-40°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

AG-EASY2B