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FETs, MOSFETs - Arrays (5637)

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Records 5637
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Part Number:

MSCSM120AM13CT6AG

Manufacturer:

Microchip Technology

Description:

SIC MOSFET

  • Series:

    -

  • FET Type:

    -

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    -

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • Power - Max:

    -

  • Operating Temperature:

    -

  • Mounting Type:

    -

  • Package / Case:

    -

  • Supplier Device Package:

    -

Stock:

0

1

Part Number:

MSCSM120AM042T6AG

Manufacturer:

Microchip Technology

Description:

SIC 2N-CH 1200V 495A

  • Series:

    -

  • FET Type:

    Silicon Carbide (SiC)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    1200V (1.2kV)

  • Current - Continuous Drain (Id) @ 25°C:

    495A (Tc)

  • Rds On (Max) @ Id, Vgs:

    5.2mOhm @ 240A, 20V

  • Vgs(th) (Max) @ Id:

    2.8V @ 18mA

  • Gate Charge (Qg) (Max) @ Vgs:

    1392nC @ 20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    18100pF @ 1000V

  • Power - Max:

    2.031kW (Tc)

  • Operating Temperature:

    -40°C ~ 175°C (TJ)

  • Mounting Type:

    Chassis Mount

  • Package / Case:

    Module

  • Supplier Device Package:

    -

Stock:

0

1

Part Number:

IPG20N04S409AATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET 2N-CH 40V 20A 8TDSON

  • Series:

    OptiMOS™

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    20A (Tc)

  • Rds On (Max) @ Id, Vgs:

    8.6mOhm @ 17A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 22µA

  • Gate Charge (Qg) (Max) @ Vgs:

    28nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2250pF @ 25V

  • Power - Max:

    54W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerVDFN

  • Supplier Device Package:

    PG-TDSON-8-4

Stock:

15000

1

Part Number:

DMTH4014LDVWQ-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 40V 10.2A PWRDI3333

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    10.2A (Ta), 27.5A (Tc)

  • Rds On (Max) @ Id, Vgs:

    15mOhm @ 20A, 10V

  • Vgs(th) (Max) @ Id:

    3V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    11.2nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    750pF @ 20V

  • Power - Max:

    1.16W (Ta)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerVDFN

  • Supplier Device Package:

    PowerDI3333-8 (Type UXD)

Stock:

8970

1

Part Number:

TSM250NB06LDCR-RLG

Manufacturer:

Taiwan Semiconductor Corporation

Description:

MOSFET 2N-CH 60V 6A/29A 8DFN

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    6A (Ta), 29A (Tc)

  • Rds On (Max) @ Id, Vgs:

    25mOhm @ 6A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    23nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1314pF @ 30V

  • Power - Max:

    2W (Ta), 48W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerTDFN

  • Supplier Device Package:

    8-PDFN (5x6)

Stock:

14394

1

Part Number:

PSMN033-100HLX

Manufacturer:

Nexperia

Description:

MOSFET 2N-CH 100V 26A LFPAK56D

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    Logic Level Gate

  • Drain to Source Voltage (Vdss):

    100V

  • Current - Continuous Drain (Id) @ 25°C:

    26A (Ta)

  • Rds On (Max) @ Id, Vgs:

    31mOhm @ 5A, 10V

  • Vgs(th) (Max) @ Id:

    2.1V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    27.3nC @ 5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    3168pF @ 25V

  • Power - Max:

    64W (Ta)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-1205, 8-LFPAK56

  • Supplier Device Package:

    LFPAK56D

Stock:

4734

1

Part Number:

AOD609G

Manufacturer:

Alpha & Omega Semiconductor Inc.

Description:

MOSFET N/P-CH 40V 12A TO252-4L

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    12A (Tc)

  • Rds On (Max) @ Id, Vgs:

    30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V

  • Vgs(th) (Max) @ Id:

    3V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    13nC @ 10V, 21nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    545pF @ 20V, 890pF @ 20V

  • Power - Max:

    2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-252-5, DPAK (4 Leads + Tab), TO-252AD

  • Supplier Device Package:

    TO-252-4L

Stock:

0

1

Part Number:

SSM6N24TU-LF

Manufacturer:

Toshiba Semiconductor and Storage

Description:

MOSFET 2N-CH 30V 0.5A UF6

  • Series:

    U-MOSIII

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    500mA (Ta)

  • Rds On (Max) @ Id, Vgs:

    145mOhm @ 500mA, 4.5V

  • Vgs(th) (Max) @ Id:

    1.1V @ 100µA

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    245pF @ 10V

  • Power - Max:

    500mW (Ta)

  • Operating Temperature:

    150°C

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-SMD, Flat Leads

  • Supplier Device Package:

    UF6

Stock:

7695

1

Part Number:

DMN3061SVTQ-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 30V 3.4A TSOT26

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    3.4A (Ta)

  • Rds On (Max) @ Id, Vgs:

    60mOhm @ 3.1A, 10V

  • Vgs(th) (Max) @ Id:

    1.8V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    6.6nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    278pF @ 15V

  • Power - Max:

    880mW

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-23-6 Thin, TSOT-23-6

  • Supplier Device Package:

    TSOT-26

Stock:

0

1

Part Number:

AON3814L

Manufacturer:

Alpha & Omega Semiconductor Inc.

Description:

MOSFET 2N-CH 20V 6A 8DFN

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    20V

  • Current - Continuous Drain (Id) @ 25°C:

    6A (Tc)

  • Rds On (Max) @ Id, Vgs:

    17mOhm @ 6A, 4.5V

  • Vgs(th) (Max) @ Id:

    1.1V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    13nC @ 4.5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1100pF @ 10V

  • Power - Max:

    2.5W

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-SMD, Flat Lead

  • Supplier Device Package:

    8-DFN (3x3)

Stock:

0

1

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