Part Number:
MSCSM120AM13CT6AG
Manufacturer:
Microchip Technology
Description:
SIC MOSFET
Series:
-
FET Type:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
0
Part Number:
MSCSM120AM042T6AG
Manufacturer:
Microchip Technology
Description:
SIC 2N-CH 1200V 495A
Series:
-
FET Type:
Silicon Carbide (SiC)
FET Feature:
-
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
495A (Tc)
Rds On (Max) @ Id, Vgs:
5.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id:
2.8V @ 18mA
Gate Charge (Qg) (Max) @ Vgs:
1392nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
18100pF @ 1000V
Power - Max:
2.031kW (Tc)
Operating Temperature:
-40°C ~ 175°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
-
Stock:
0
Part Number:
IPG20N04S409AATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 40V 20A 8TDSON
Series:
OptiMOS™
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Rds On (Max) @ Id, Vgs:
8.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:
4V @ 22µA
Gate Charge (Qg) (Max) @ Vgs:
28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
2250pF @ 25V
Power - Max:
54W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-PowerVDFN
Supplier Device Package:
PG-TDSON-8-4
Stock:
15000
Part Number:
DMTH4014LDVWQ-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 2N-CH 40V 10.2A PWRDI3333
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
10.2A (Ta), 27.5A (Tc)
Rds On (Max) @ Id, Vgs:
15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
750pF @ 20V
Power - Max:
1.16W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-PowerVDFN
Supplier Device Package:
PowerDI3333-8 (Type UXD)
Stock:
8970
Part Number:
TSM250NB06LDCR-RLG
Manufacturer:
Taiwan Semiconductor Corporation
Description:
MOSFET 2N-CH 60V 6A/29A 8DFN
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
6A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs:
25mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1314pF @ 30V
Power - Max:
2W (Ta), 48W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-PowerTDFN
Supplier Device Package:
8-PDFN (5x6)
Stock:
14394
Part Number:
PSMN033-100HLX
Manufacturer:
Nexperia
Description:
MOSFET 2N-CH 100V 26A LFPAK56D
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
26A (Ta)
Rds On (Max) @ Id, Vgs:
31mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
27.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:
3168pF @ 25V
Power - Max:
64W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-1205, 8-LFPAK56
Supplier Device Package:
LFPAK56D
Stock:
4734
Part Number:
AOD609G
Manufacturer:
Alpha & Omega Semiconductor Inc.
Description:
MOSFET N/P-CH 40V 12A TO252-4L
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Rds On (Max) @ Id, Vgs:
30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
13nC @ 10V, 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
545pF @ 20V, 890pF @ 20V
Power - Max:
2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Supplier Device Package:
TO-252-4L
Stock:
0
Part Number:
SSM6N24TU-LF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET 2N-CH 30V 0.5A UF6
Series:
U-MOSIII
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
500mA (Ta)
Rds On (Max) @ Id, Vgs:
145mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:
1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
245pF @ 10V
Power - Max:
500mW (Ta)
Operating Temperature:
150°C
Mounting Type:
Surface Mount
Package / Case:
6-SMD, Flat Leads
Supplier Device Package:
UF6
Stock:
7695
Part Number:
DMN3061SVTQ-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 2N-CH 30V 3.4A TSOT26
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
3.4A (Ta)
Rds On (Max) @ Id, Vgs:
60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
278pF @ 15V
Power - Max:
880mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:
TSOT-26
Stock:
0
Part Number:
AON3814L
Manufacturer:
Alpha & Omega Semiconductor Inc.
Description:
MOSFET 2N-CH 20V 6A 8DFN
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Rds On (Max) @ Id, Vgs:
17mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
1100pF @ 10V
Power - Max:
2.5W
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-SMD, Flat Lead
Supplier Device Package:
8-DFN (3x3)
Stock:
0
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