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FETs, MOSFETs - Arrays (5637)

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Part Number:

DMN16M8UCA6-7

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 12V X3-DSN2718-6

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    12V

  • Current - Continuous Drain (Id) @ 25°C:

    15.5A (Ta)

  • Rds On (Max) @ Id, Vgs:

    5.6mOhm @ 3A, 4.5V

  • Vgs(th) (Max) @ Id:

    1.3V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    45.4nC @ 6V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2333pF @ 6V

  • Power - Max:

    1.1W

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-SMD, No Lead

  • Supplier Device Package:

    X3-DSN2718-6

Stock:

0

1

Part Number:

SQJB44EP-T1_GE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET 2N-CH 40V 30A PPAK SO8

  • Series:

    TrenchFET®

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    30A (Tc)

  • Rds On (Max) @ Id, Vgs:

    5.2mOhm @ 8A, 10V

  • Vgs(th) (Max) @ Id:

    2.2V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    50nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    3075pF @ 25V

  • Power - Max:

    48W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    PowerPAK® SO-8 Dual

  • Supplier Device Package:

    PowerPAK® SO-8 Dual

Stock:

8622

1

Part Number:

DMT35M8LDG-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 30V 17A PWRDI3333

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    17A (Ta), 15.3A (Ta)

  • Rds On (Max) @ Id, Vgs:

    4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V

  • Vgs(th) (Max) @ Id:

    1.9V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    22.7nC @ 10V, 16.3nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1510pF @ 15V, 1032pF @ 15V

  • Power - Max:

    980mW (Ta), 2W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerVDFN

  • Supplier Device Package:

    PowerDI3333-8 (Type G)

Stock:

0

1

Part Number:

FF33MR12W1M1HB11BPSA1

Manufacturer:

Infineon Technologies

Description:

MOSFET

  • Series:

    -

  • FET Type:

    -

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    -

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • Power - Max:

    -

  • Operating Temperature:

    -

  • Mounting Type:

    -

  • Package / Case:

    -

  • Supplier Device Package:

    -

Stock:

66

1

Part Number:

DMP68D1LV-13

Manufacturer:

Diodes Incorporated

Description:

BSS FAMILY SOT563 T&R 10K

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    238mA (Ta)

  • Rds On (Max) @ Id, Vgs:

    8Ohm @ 100mA, 5V

  • Vgs(th) (Max) @ Id:

    2.1V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    0.6nC @ 5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    42pF @ 30V

  • Power - Max:

    500mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-563

Stock:

0

1

Part Number:

TSM5055DCR

Manufacturer:

Taiwan Semiconductor Corporation

Description:

MOSFET 2N-CH 30V 107A 8DFN

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)

  • Rds On (Max) @ Id, Vgs:

    11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    9.3nC @ 10V, 49nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    555pF @ 15V, 2550pF @ 15V

  • Power - Max:

    2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerTDFN

  • Supplier Device Package:

    8-PDFN (5x6)

Stock:

0

1

Part Number:

DMN61D9UDWQ-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 60V 0.318A SOT363

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    318mA (Ta)

  • Rds On (Max) @ Id, Vgs:

    2Ohm @ 50mA, 5V

  • Vgs(th) (Max) @ Id:

    1V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    0.6nC @ 4.5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    39pF @ 30V

  • Power - Max:

    370mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

0

1

Part Number:

DF16MR12W1M1HFB67BPSA1

Manufacturer:

Infineon Technologies

Description:

MOSFET 2N-CH 1200V 25A

  • Series:

    EasyPACK™, CoolSiC™

  • FET Type:

    -

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    1200V (1.2kV)

  • Current - Continuous Drain (Id) @ 25°C:

    25A

  • Rds On (Max) @ Id, Vgs:

    32.3mOhm @ 25A, 18V

  • Vgs(th) (Max) @ Id:

    5.15V @ 10mA

  • Gate Charge (Qg) (Max) @ Vgs:

    74nC @ 18V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2200pF @ 800V

  • Power - Max:

    -

  • Operating Temperature:

    -40°C ~ 150°C (TJ)

  • Mounting Type:

    Chassis Mount

  • Package / Case:

    -

  • Supplier Device Package:

    -

Stock:

72

1

Part Number:

UT6MC5TCR

Manufacturer:

Rohm Semiconductor

Description:

MOSFET 60V 3.5A/2.5A HUML2020L8

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    3.5A (Ta), 2.5A (Ta)

  • Rds On (Max) @ Id, Vgs:

    95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • Power - Max:

    2W (Ta)

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-PowerUDFN

  • Supplier Device Package:

    HUML2020L8

Stock:

14970

1

Part Number:

DMT4014LDV-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 40V 8.5A PWRDI3333

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    8.5A (Ta), 26.5A (Tc)

  • Rds On (Max) @ Id, Vgs:

    19mOhm @ 20A, 10V

  • Vgs(th) (Max) @ Id:

    3V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    11.2nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    750pF @ 20V

  • Power - Max:

    1W (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerVDFN

  • Supplier Device Package:

    PowerDI3333-8 (Type UXC)

Stock:

0

1

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