FETs, MOSFETs - Single (41758)

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

33mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

17.6nC @ 5V

Vgs (Max):

±15V

Input Capacitance (Ciss) (Max) @ Vds:

1236pF @ 25V

FET Feature:

-

Power Dissipation (Max):

77W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DPAK

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

38.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

3072pF @ 25V

FET Feature:

-

Power Dissipation (Max):

114W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DPAK

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

28mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

3100pF @ 25V

FET Feature:

-

Power Dissipation (Max):

166W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

D2PAK

Package / Case:

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

25mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

61nC @ 10V

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

2600pF @ 25V

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

90mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

21nC @ 10V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

633pF @ 25V

FET Feature:

-

Power Dissipation (Max):

79W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DPAK

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V

Rds On (Max) @ Id, Vgs:

35mOhm @ 17A, 5V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

1400pF @ 25V

FET Feature:

-

Power Dissipation (Max):

85W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

24mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±16V

Input Capacitance (Ciss) (Max) @ Vds:

1500pF @ 25V

FET Feature:

-

Power Dissipation (Max):

103W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

38mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

6.1nC @ 4.5V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

495pF @ 25V

FET Feature:

-

Power Dissipation (Max):

1.75W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

6-TSOP

Package / Case:

SC-74, SOT-457

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

13mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

47nC @ 10V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2245pF @ 25V

FET Feature:

-

Power Dissipation (Max):

150W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DPAK

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

3.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

41nC @ 10V

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

2458pF @ 12V

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

Surface Mount

Supplier Device Package:

LFPAK56, Power-SO8

Package / Case:

SC-100, SOT-669