FETs, MOSFETs - Single (41758)

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

3.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

78nC @ 10V

Vgs (Max):

±16V

Input Capacitance (Ciss) (Max) @ Vds:

4707pF @ 25V

FET Feature:

-

Power Dissipation (Max):

158W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

3.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

191nC @ 10V

Vgs (Max):

±16V

Input Capacitance (Ciss) (Max) @ Vds:

11516pF @ 25V

FET Feature:

-

Power Dissipation (Max):

263W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

3.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

125nC @ 10V

Vgs (Max):

±16V

Input Capacitance (Ciss) (Max) @ Vds:

8020pF @ 25V

FET Feature:

-

Power Dissipation (Max):

204W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

3.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

258nC @ 10V

Vgs (Max):

±16V

Input Capacitance (Ciss) (Max) @ Vds:

15300pF @ 25V

FET Feature:

-

Power Dissipation (Max):

306W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

75V

Current - Continuous Drain (Id) @ 25°C:

77A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

10.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

81nC @ 10V

Vgs (Max):

±16V

Input Capacitance (Ciss) (Max) @ Vds:

5251pF @ 25V

FET Feature:

-

Power Dissipation (Max):

158W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

82nC @ 10V

Vgs (Max):

±16V

Input Capacitance (Ciss) (Max) @ Vds:

5160pF @ 25V

FET Feature:

-

Power Dissipation (Max):

158W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

250mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DFN1006-3

Package / Case:

SC-101, SOT-883

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

Surface Mount

Supplier Device Package:

LFPAK56, Power-SO8

Package / Case:

SC-100, SOT-669

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

10mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

35nC @ 10V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2453pF @ 25V

FET Feature:

-

Power Dissipation (Max):

167W (Tc)

Operating Temperature:

-55°C ~ 185°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DPAK

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

20mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±15V

Input Capacitance (Ciss) (Max) @ Vds:

2210pF @ 25V

FET Feature:

-

Power Dissipation (Max):

103W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DPAK

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63