Part Number:
PHD77NQ03T,118
Manufacturer:
NXP
Description:
MOSFET N-CH 25V 75A DPAK
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
9.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
17.1nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
860pF @ 12V
FET Feature:
-
Power Dissipation (Max):
107W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Stock:
468
Part Number:
PH9030L,115
Manufacturer:
NXP
Description:
MOSFET N-CH 30V 63A LFPAK
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
13.3nC @ 4.5V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1565pF @ 12V
FET Feature:
-
Power Dissipation (Max):
62.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8
Package / Case:
SC-100, SOT-669
Stock:
278
Part Number:
PH1875L,115
Manufacturer:
NXP
Description:
MOSFET N-CH 75V 45.8A LFPAK
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
75V
Current - Continuous Drain (Id) @ 25°C:
45.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
16.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
33.4nC @ 5V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
2600pF @ 25V
FET Feature:
-
Power Dissipation (Max):
62.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8
Package / Case:
SC-100, SOT-669
Stock:
133
Part Number:
2N7002T,215
Manufacturer:
NXP
Description:
MOSFET N-CH 60V 300MA SOT-23
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
40pF @ 10V
FET Feature:
-
Power Dissipation (Max):
830mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB (SOT23)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Stock:
414
Part Number:
PHB23NQ10LT,118
Manufacturer:
NXP
Description:
MOSFET N-CH 100V 23A D2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
72mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
49nC @ 10V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
1704pF @ 25V
FET Feature:
-
Power Dissipation (Max):
98W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Stock:
170
Part Number:
PHB119NQ06T,118
Manufacturer:
NXP
Description:
MOSFET N-CH 55V 75A D2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
7.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
53nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2820pF @ 25V
FET Feature:
-
Power Dissipation (Max):
200W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Stock:
275
Part Number:
PH9025L,115
Manufacturer:
NXP
Description:
MOSFET N-CH 25V 66A LFPAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
66A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
12.8nC @ 4.5V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1414pF @ 30V
FET Feature:
-
Power Dissipation (Max):
62.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8
Package / Case:
SC-100, SOT-669
Stock:
196
Part Number:
PMN50XP,165
Manufacturer:
NXP
Description:
MOSFET P-CH 20V 4.8A 6TSOP
Series:
TrenchMOS™
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
60mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id:
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 4.5V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
1020pF @ 20V
FET Feature:
-
Power Dissipation (Max):
2.2W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP
Package / Case:
SC-74, SOT-457
Stock:
241
Part Number:
2N7000,126
Manufacturer:
NXP
Description:
MOSFET N-CH 60V 300MA TO-92
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
40pF @ 10V
FET Feature:
-
Power Dissipation (Max):
830mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock:
112
Part Number:
PSMN004-60P,127
Manufacturer:
NXP
Description:
MOSFET N-CH 60V 75A TO220AB
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
3.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
168nC @ 10V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
8300pF @ 25V
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Package / Case:
TO-220-3
Stock:
308
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