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FETs, MOSFETs - Single (41758)

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Part Number:

PHD77NQ03T,118

Manufacturer:

NXP

Description:

MOSFET N-CH 25V 75A DPAK

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    9.5mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    3.2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    17.1nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    860pF @ 12V

  • FET Feature:

    -

  • Power Dissipation (Max):

    107W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

468

1

Part Number:

PH9030L,115

Manufacturer:

NXP

Description:

MOSFET N-CH 30V 63A LFPAK

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    63A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    9mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    13.3nC @ 4.5V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1565pF @ 12V

  • FET Feature:

    -

  • Power Dissipation (Max):

    62.5W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    LFPAK56, Power-SO8

  • Package / Case:

    SC-100, SOT-669

Stock:

278

1

Part Number:

PH1875L,115

Manufacturer:

NXP

Description:

MOSFET N-CH 75V 45.8A LFPAK

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    75V

  • Current - Continuous Drain (Id) @ 25°C:

    45.8A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    16.5mOhm @ 20A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    33.4nC @ 5V

  • Vgs (Max):

    ±15V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2600pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    62.5W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    LFPAK56, Power-SO8

  • Package / Case:

    SC-100, SOT-669

Stock:

133

1

Part Number:

2N7002T,215

Manufacturer:

NXP

Description:

MOSFET N-CH 60V 300MA SOT-23

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    300mA (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    5Ohm @ 500mA, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    40pF @ 10V

  • FET Feature:

    -

  • Power Dissipation (Max):

    830mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    TO-236AB (SOT23)

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

Stock:

414

1

Part Number:

PHB23NQ10LT,118

Manufacturer:

NXP

Description:

MOSFET N-CH 100V 23A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100V

  • Current - Continuous Drain (Id) @ 25°C:

    23A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    72mOhm @ 10A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    49nC @ 10V

  • Vgs (Max):

    ±15V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1704pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    98W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

170

1

Part Number:

PHB119NQ06T,118

Manufacturer:

NXP

Description:

MOSFET N-CH 55V 75A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    55V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    7.1mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    53nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2820pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    200W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

275

1

Part Number:

PH9025L,115

Manufacturer:

NXP

Description:

MOSFET N-CH 25V 66A LFPAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25V

  • Current - Continuous Drain (Id) @ 25°C:

    66A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    9mOhm @ 10A, 10V

  • Vgs(th) (Max) @ Id:

    2.15V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    12.8nC @ 4.5V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1414pF @ 30V

  • FET Feature:

    -

  • Power Dissipation (Max):

    62.5W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    LFPAK56, Power-SO8

  • Package / Case:

    SC-100, SOT-669

Stock:

196

1

Part Number:

PMN50XP,165

Manufacturer:

NXP

Description:

MOSFET P-CH 20V 4.8A 6TSOP

  • Series:

    TrenchMOS™

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    20V

  • Current - Continuous Drain (Id) @ 25°C:

    4.8A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    2.5V, 4.5V

  • Rds On (Max) @ Id, Vgs:

    60mOhm @ 2.8A, 4.5V

  • Vgs(th) (Max) @ Id:

    950mV @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    10nC @ 4.5V

  • Vgs (Max):

    ±12V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1020pF @ 20V

  • FET Feature:

    -

  • Power Dissipation (Max):

    2.2W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    6-TSOP

  • Package / Case:

    SC-74, SOT-457

Stock:

241

1

Part Number:

2N7000,126

Manufacturer:

NXP

Description:

MOSFET N-CH 60V 300MA TO-92

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    300mA (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    5Ohm @ 500mA, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    ±30V

  • Input Capacitance (Ciss) (Max) @ Vds:

    40pF @ 10V

  • FET Feature:

    -

  • Power Dissipation (Max):

    830mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-92-3

  • Package / Case:

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock:

112

1

Part Number:

PSMN004-60P,127

Manufacturer:

NXP

Description:

MOSFET N-CH 60V 75A TO220AB

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    3.6mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    168nC @ 10V

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    8300pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220AB

  • Package / Case:

    TO-220-3

Stock:

308

1

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