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FETs, MOSFETs - Single (41758)

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Part Number:

MCAC80P06Y-TP

Manufacturer:

Micro Commercial Co

Description:

P-CHANNEL MOSFET, DFN5060

  • Series:

    -

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60 V

  • Current - Continuous Drain (Id) @ 25°C:

    80A

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    8mOhm @ 20A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    82 nC @ 10 V

  • Vgs (Max):

    ±18V

  • Input Capacitance (Ciss) (Max) @ Vds:

    5450 pF @ 30 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    120W (Tj)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DFN5060

  • Package / Case:

    8-PowerTDFN

Stock:

30717

1

Part Number:

SISS78LDN-T1-GE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 70V 19.4A/66.7A PPAK

  • Series:

    TrenchFET® Gen IV

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    70 V

  • Current - Continuous Drain (Id) @ 25°C:

    19.4A (Ta), 66.7A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    5.8mOhm @ 10A, 10V

  • Vgs(th) (Max) @ Id:

    2.3V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    50 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2280 pF @ 35 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    4.8W (Ta), 57W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PowerPAK® 1212-8SH

  • Package / Case:

    PowerPAK® 1212-8SH

Stock:

17985

1

Part Number:

RXH100N03TB1

Manufacturer:

Rohm Semiconductor

Description:

4V DRIVE NCH MOSFET: MOSFETS ARE

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30 V

  • Current - Continuous Drain (Id) @ 25°C:

    10A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    4V, 10V

  • Rds On (Max) @ Id, Vgs:

    13mOhm @ 10A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    11 nC @ 5 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    800 pF @ 10 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    2W (Ta)

  • Operating Temperature:

    150°C

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    8-SOP

  • Package / Case:

    8-SOIC (0.154", 3.90mm Width)

Stock:

7356

1

Part Number:

AOK150V120X2

Manufacturer:

Alpha & Omega Semiconductor Inc.

Description:

1200V SILICON CARBIDE MOSFET

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    SiCFET (Silicon Carbide)

  • Drain to Source Voltage (Vdss):

    1200 V

  • Current - Continuous Drain (Id) @ 25°C:

    20A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    15V

  • Rds On (Max) @ Id, Vgs:

    195mOhm @ 3.9A, 15V

  • Vgs(th) (Max) @ Id:

    3.6V @ 3.9mA

  • Gate Charge (Qg) (Max) @ Vgs:

    28.3 nC @ 15 V

  • Vgs (Max):

    +15V, -5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    664 pF @ 800 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    115W (Tj)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-247

  • Package / Case:

    TO-247-3

Stock:

0

1

Part Number:

DMP3021SFVWQ-7

Manufacturer:

Diodes Incorporated

Description:

MOSFET P-CH 30V 9.8A PWRDI3333-8

  • Series:

    -

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30 V

  • Current - Continuous Drain (Id) @ 25°C:

    11A (Ta), 42A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    15mOhm @ 8A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    34 nC @ 10 V

  • Vgs (Max):

    ±25V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1799 pF @ 15 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    1W (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PowerDI3333-8

  • Package / Case:

    8-PowerVDFN

Stock:

24000

1

Part Number:

TPCC8105-L1Q

Manufacturer:

Toshiba Semiconductor and Storage

Description:

PB-F POWER MOSFET TRANSISTOR TSO

  • Series:

    U-MOSVI

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30 V

  • Current - Continuous Drain (Id) @ 25°C:

    23A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    7.8mOhm @ 11.5A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 500µA

  • Gate Charge (Qg) (Max) @ Vgs:

    76 nC @ 10 V

  • Vgs (Max):

    +20V, -25V

  • Input Capacitance (Ciss) (Max) @ Vds:

    3240 pF @ 10 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    700mW (Ta), 30W (Tc)

  • Operating Temperature:

    150°C

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    8-TSON Advance (3.3x3.3)

  • Package / Case:

    8-VDFN Exposed Pad

Stock:

11400

1

Part Number:

SCT2280KEHRC11

Manufacturer:

Rohm Semiconductor

Description:

1200V, 14A, THD, SILICON-CARBIDE

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    SiCFET (Silicon Carbide)

  • Drain to Source Voltage (Vdss):

    1200 V

  • Current - Continuous Drain (Id) @ 25°C:

    14A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    18V

  • Rds On (Max) @ Id, Vgs:

    364mOhm @ 4A, 18V

  • Vgs(th) (Max) @ Id:

    4V @ 1.4mA

  • Gate Charge (Qg) (Max) @ Vgs:

    36 nC @ 400 V

  • Vgs (Max):

    +22V, -6V

  • Input Capacitance (Ciss) (Max) @ Vds:

    667 pF @ 800 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    108W (Tc)

  • Operating Temperature:

    175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-247N

  • Package / Case:

    TO-247-3

Stock:

1350

1

Part Number:

MCU50N06AHE3-TP

Manufacturer:

Micro Commercial Co

Description:

MOSFET

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60 V

  • Current - Continuous Drain (Id) @ 25°C:

    50A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    15mOhm @ 15A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    46 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2515 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    59.5W (Tj)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    TO-252 (DPAK)

  • Package / Case:

    TO-252-3, DPAK (2 Leads + Tab), SC-63

Stock:

0

1

Part Number:

IXFP50N20X3

Manufacturer:

IXYS

Description:

DISCMSFT NCHULTRJNCTX3CLASS TO-2

  • Series:

    HiPerFET™, Ultra X3

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    200 V

  • Current - Continuous Drain (Id) @ 25°C:

    50A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    30mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    4.5V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    33 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2100 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    240W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220-3 (IXFP)

  • Package / Case:

    TO-220-3

Stock:

0

1

Part Number:

CEZ6R86L-HF

Manufacturer:

Comchip Technology

Description:

MOSFET N-CH 60V 56A 8DFN

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60 V

  • Current - Continuous Drain (Id) @ 25°C:

    56A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    6.4mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2.6V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    42.8 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1619 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    2.5W (Ta), 83W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    8-DFN (5x6)

  • Package / Case:

    8-PowerVDFN

Stock:

0

1

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