Part Number:
MCAC80P06Y-TP
Manufacturer:
Micro Commercial Co
Description:
P-CHANNEL MOSFET, DFN5060
Series:
-
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
80A
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
82 nC @ 10 V
Vgs (Max):
±18V
Input Capacitance (Ciss) (Max) @ Vds:
5450 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
120W (Tj)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DFN5060
Package / Case:
8-PowerTDFN
Stock:
30717
Part Number:
SISS78LDN-T1-GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 70V 19.4A/66.7A PPAK
Series:
TrenchFET® Gen IV
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
70 V
Current - Continuous Drain (Id) @ 25°C:
19.4A (Ta), 66.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
50 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2280 pF @ 35 V
FET Feature:
-
Power Dissipation (Max):
4.8W (Ta), 57W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® 1212-8SH
Package / Case:
PowerPAK® 1212-8SH
Stock:
17985
Part Number:
RXH100N03TB1
Manufacturer:
Rohm Semiconductor
Description:
4V DRIVE NCH MOSFET: MOSFETS ARE
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Rds On (Max) @ Id, Vgs:
13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
800 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
2W (Ta)
Operating Temperature:
150°C
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOP
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Stock:
7356
Part Number:
AOK150V120X2
Manufacturer:
Alpha & Omega Semiconductor Inc.
Description:
1200V SILICON CARBIDE MOSFET
Series:
-
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
15V
Rds On (Max) @ Id, Vgs:
195mOhm @ 3.9A, 15V
Vgs(th) (Max) @ Id:
3.6V @ 3.9mA
Gate Charge (Qg) (Max) @ Vgs:
28.3 nC @ 15 V
Vgs (Max):
+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds:
664 pF @ 800 V
FET Feature:
-
Power Dissipation (Max):
115W (Tj)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Package / Case:
TO-247-3
Stock:
0
Part Number:
DMP3021SFVWQ-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET P-CH 30V 9.8A PWRDI3333-8
Series:
-
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
11A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
15mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
1799 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI3333-8
Package / Case:
8-PowerVDFN
Stock:
24000
Part Number:
TPCC8105-L1Q
Manufacturer:
Toshiba Semiconductor and Storage
Description:
PB-F POWER MOSFET TRANSISTOR TSO
Series:
U-MOSVI
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
23A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7.8mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id:
2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:
76 nC @ 10 V
Vgs (Max):
+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds:
3240 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
700mW (Ta), 30W (Tc)
Operating Temperature:
150°C
Mounting Type:
Surface Mount
Supplier Device Package:
8-TSON Advance (3.3x3.3)
Package / Case:
8-VDFN Exposed Pad
Stock:
11400
Part Number:
SCT2280KEHRC11
Manufacturer:
Rohm Semiconductor
Description:
1200V, 14A, THD, SILICON-CARBIDE
Series:
-
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
18V
Rds On (Max) @ Id, Vgs:
364mOhm @ 4A, 18V
Vgs(th) (Max) @ Id:
4V @ 1.4mA
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 400 V
Vgs (Max):
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds:
667 pF @ 800 V
FET Feature:
-
Power Dissipation (Max):
108W (Tc)
Operating Temperature:
175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-247N
Package / Case:
TO-247-3
Stock:
1350
Part Number:
MCU50N06AHE3-TP
Manufacturer:
Micro Commercial Co
Description:
MOSFET
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
15mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
46 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2515 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
59.5W (Tj)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252 (DPAK)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Stock:
0
Part Number:
IXFP50N20X3
Manufacturer:
IXYS
Description:
DISCMSFT NCHULTRJNCTX3CLASS TO-2
Series:
HiPerFET™, Ultra X3
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
30mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
33 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2100 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
240W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3 (IXFP)
Package / Case:
TO-220-3
Stock:
0
Part Number:
CEZ6R86L-HF
Manufacturer:
Comchip Technology
Description:
MOSFET N-CH 60V 56A 8DFN
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
42.8 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1619 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 83W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (5x6)
Package / Case:
8-PowerVDFN
Stock:
0
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