FETs, MOSFETs - Single (41758)

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

5.2A (Ta), 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 4.5V

Rds On (Max) @ Id, Vgs:

38mOhm @ 5.2A, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

45 nC @ 8 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

1300 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

1.6W (Ta), 3.3W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

6-TSOP

Package / Case:

SOT-23-6 Thin, TSOT-23-6

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

80 V

Current - Continuous Drain (Id) @ 25°C:

111A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

7.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

34 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1950 pF @ 40 V

FET Feature:

-

Power Dissipation (Max):

2.4W (Ta), 167W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220-3

Package / Case:

TO-220-3

Series:

U-MOSIX-H

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

1.24mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:

2.4V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:

74 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

7200 pF @ 20 V

FET Feature:

-

Power Dissipation (Max):

960mW (Ta), 170W (Tc)

Operating Temperature:

175°C

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP Advance (5x5.75)

Package / Case:

8-PowerTDFN

Series:

Polar

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

2.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

7.5Ohm @ 1.2A, 10V

Vgs(th) (Max) @ Id:

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

37 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

1207 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

125W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-263 (D2PAK)

Package / Case:

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Series:

MDmesh™ DM2

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

50mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

120 nC @ 10 V

Vgs (Max):

±25V

Input Capacitance (Ciss) (Max) @ Vds:

5500 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

446W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247 Long Leads

Package / Case:

TO-247-3

Series:

OptiMOS™

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

16.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

90mOhm @ 16.4A, 10V

Vgs(th) (Max) @ Id:

4V @ 710µA

Gate Charge (Qg) (Max) @ Vgs:

27 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1100 pF @ 30 V

FET Feature:

-

Power Dissipation (Max):

63W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO252-3-313

Package / Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63

Series:

-

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

750 V

Current - Continuous Drain (Id) @ 25°C:

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V

Rds On (Max) @ Id, Vgs:

59mOhm @ 17A, 18V

Vgs(th) (Max) @ Id:

4.8V @ 8.89mA

Gate Charge (Qg) (Max) @ Vgs:

63 nC @ 18 V

Vgs (Max):

+21V, -4V

Input Capacitance (Ciss) (Max) @ Vds:

14600 pF @ 500 V

FET Feature:

-

Power Dissipation (Max):

115W

Operating Temperature:

175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247N

Package / Case:

TO-247-3

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

4.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4.5V

Rds On (Max) @ Id, Vgs:

38mOhm @ 3.6A, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

4.3 nC @ 4.5 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

400 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

800mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-3

Package / Case:

TO-236-3, SC-59, SOT-23-3

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

6.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

26mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

7 nC @ 10 V

Vgs (Max):

±16V

Input Capacitance (Ciss) (Max) @ Vds:

362 pF @ 20 V

FET Feature:

-

Power Dissipation (Max):

1.2W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

U-DFN2020-6 (Type F)

Package / Case:

6-UDFN Exposed Pad

Series:

OptiMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

80 V

Current - Continuous Drain (Id) @ 25°C:

16A (Ta), 101A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

6V, 10V

Rds On (Max) @ Id, Vgs:

5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

3.8V @ 49µA

Gate Charge (Qg) (Max) @ Vgs:

43.2 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2900 pF @ 40 V

FET Feature:

-

Power Dissipation (Max):

2.5W (Ta), 100W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount, Wettable Flank

Supplier Device Package:

PG-TTFN-9-1

Package / Case:

8-PowerTDFN