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IXTA2R4N120P-TRL

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Part Number

IXTA2R4N120P-TRL

Manufacturer

IXYS

Description

MOSFET N-CH 1200V 2.4A TO263

Lifecycle

Active

RoHS

No RoHS Information

EDA/CAD Models

IXTA2R4N120P-TRL PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:0 pcs

运送服务：

IXTA2R4N120P-TRL 规格

Current - Continuous Drain (Id) @ 25°C
2.4A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1207 pF @ 25 V
Manufacturer
IXYS
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Power Dissipation (Max)
125W (Tc)
Rds On (Max) @ Id, Vgs
7.5Ohm @ 1.2A, 10V
Series
Polar
Supplier Device Package
TO-263 (D2PAK)
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±30V
Vgs(th) (Max) @ Id
4.5V @ 250µA

IXTA2R4N120P-TRL 标签

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