Contact
Send MessageDMT8008SCT
80 V|111A (Tc)|2.4W (Ta), 167W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET BVDSS: 61V~100V TO220AB T
Specifications
- Brand
- Diodes Incorporated
- Package
- TO-220-3
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMT8008SCT from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 80 V | |
| Current - Continuous Drain (Id) @ 25°C | 111A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 40 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.4W (Ta), 167W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220-3 | |
| Package / Case | TO-220-3 |
Recommended Products
RES SMD 4.87 KOHM 0.5% 1/2W 1210
FIXED IND 6.8UH 1.18A 198 MOHM
CAP CER 3.9PF 10V C0G/NP0 1210
CAP CER 12PF 100V C0G/NP0 0402
IC OPAMP GP 1 CIRCUIT 8SOIC
MOSFET N-CH 150V 4.1A 8SOIC
.025" BOARD SPACERS
AB 2C 2#16S PIN PLUG
CONTACT SOCKET 24-28AWG CRIMP
CONN EDGE DUAL FMALE 80POS 0.156
