FETs, MOSFETs - Single (41758)

Series:

MDmesh™ M6

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

99mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

44.3 nC @ 10 V

Vgs (Max):

±25V

Input Capacitance (Ciss) (Max) @ Vds:

1960 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

40W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220FP

Package / Case:

TO-220-3 Full Pack

Series:

-

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

300A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

1.02mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2.2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:

121.35 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

8598 pF @ 15 V

FET Feature:

Schottky Diode (Body)

Power Dissipation (Max):

238W (Ta)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

LFPAK56, Power-SO8

Package / Case:

SC-100, SOT-669

Series:

-

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

OptiMOS®-P2

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

3.8mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:

4V @ 340µA

Gate Charge (Qg) (Max) @ Vgs:

205 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

14790 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

136W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-3-2

Package / Case:

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

14.9 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1009 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

860mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

U-DFN2020-6 (Type F)

Package / Case:

6-UDFN Exposed Pad

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

35A

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

20mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

57 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2511 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

59W

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DFN3333

Package / Case:

8-VDFN Exposed Pad

Series:

-

FET Type:

N-Channel

Technology:

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

68A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

15V

Rds On (Max) @ Id, Vgs:

43mOhm @ 20A, 15V

Vgs(th) (Max) @ Id:

2.8V @ 17.5mA

Gate Charge (Qg) (Max) @ Vgs:

104 nC @ 15 V

Vgs (Max):

+15V, -5V

Input Capacitance (Ciss) (Max) @ Vds:

2908 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

300W (Ta)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-4L

Package / Case:

TO-247-4

Series:

OptiMOS™ 6

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

120 V

Current - Continuous Drain (Id) @ 25°C:

21A (Ta), 194A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

8V, 10V

Rds On (Max) @ Id, Vgs:

3.04mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:

3.6V @ 141µA

Gate Charge (Qg) (Max) @ Vgs:

74 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

5500 pF @ 60 V

FET Feature:

-

Power Dissipation (Max):

3W (Ta), 250W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TSON-8-3

Package / Case:

8-PowerTDFN

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

80 V

Current - Continuous Drain (Id) @ 25°C:

7.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

25mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

10.4 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

641 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

1.2W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

U-DFN2020-6 (Type F)

Package / Case:

6-UDFN Exposed Pad