FETs, MOSFETs - Single (41758)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

500mA

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

750mOhm @ 300mA, 10V

Vgs(th) (Max) @ Id:

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

1.28 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

29 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

200mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-723

Package / Case:

SOT-723

Series:

OptiMOS™ 6

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

120 V

Current - Continuous Drain (Id) @ 25°C:

13.4A (Ta), 86A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

3.3V, 10V

Rds On (Max) @ Id, Vgs:

7.3mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:

2.2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:

36 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2600 pF @ 60 V

FET Feature:

-

Power Dissipation (Max):

3W (Ta), 125W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TDSON-8

Package / Case:

8-PowerTDFN

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

210mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

20 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1419 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

2W (Ta), 54W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-252 (DPAK)

Package / Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63

Series:

U-MOSIX-H

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

150A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

6V, 10V

Rds On (Max) @ Id, Vgs:

0.79mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

85 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

6650 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

960mW (Ta), 170W (Tc)

Operating Temperature:

175°C

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP Advance (5x5)

Package / Case:

8-PowerVDFN

Series:

-

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

-

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

-

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

50mOhm @ 40A, 20V

Vgs(th) (Max) @ Id:

2.7V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

137 nC @ 20 V

Vgs (Max):

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

1990 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

245W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Chassis Mount

Supplier Device Package:

SOT-227 (ISOTOP®)

Package / Case:

SOT-227-4, miniBLOC

Series:

-

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

50mOhm @ 40A, 20V

Vgs(th) (Max) @ Id:

2.7V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

137 nC @ 20 V

Vgs (Max):

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

1990 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

245W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Chassis Mount

Supplier Device Package:

SOT-227 (ISOTOP®)

Package / Case:

SOT-227-4, miniBLOC

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

140A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

3.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

117 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

6920 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

220W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

CoolMOS™ CFD7

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

90mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:

4.5V @ 470µA

Gate Charge (Qg) (Max) @ Vgs:

42 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1747 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

227W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-HDSOP-10-1

Package / Case:

10-PowerSOP Module