Part Number:
SIHP15N50E-BE3
Manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 500V
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
280mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
66 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1162 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
156W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Package / Case:
TO-220-3
Stock:
5535
Part Number:
DMN3061SWQ-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 25V~30V SOT323 T&R
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
3.3V, 10V
Rds On (Max) @ Id, Vgs:
60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
3.5 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
278 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
490mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-323
Package / Case:
SC-70, SOT-323
Stock:
19800
Part Number:
CDMSJ22029-650-SL
Manufacturer:
Central Semiconductor Corp
Description:
SUPER JUNCTION MOSFETS
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
130mOhm @ 10.8A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
51 nC @ 10 V
Vgs (Max):
30V
Input Capacitance (Ciss) (Max) @ Vds:
1920 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
33W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP
Package / Case:
TO-220-3 Full Pack
Stock:
1500
Part Number:
DMN39M1LSS-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 25V~30V SO-8 T&R 2
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
15A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
42 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2311 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.4W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Stock:
0
Part Number:
IPB65R115CFD7AATMA1
Manufacturer:
Infineon Technologies
Description:
AUTOMOTIVE_COOLMOS PG-TO263-3
Series:
CoolMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
115mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 490µA
Gate Charge (Qg) (Max) @ Vgs:
41 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1950 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
114W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stock:
2970
Part Number:
TPCP8107-LF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET P-CH 40V 8A PS-8
Series:
U-MOSVI
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
18mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
44.6 nC @ 10 V
Vgs (Max):
+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds:
2160 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
175°C
Mounting Type:
Surface Mount
Supplier Device Package:
PS-8
Package / Case:
8-SMD, Flat Lead
Stock:
11598
Part Number:
SUD50P10-43L-BE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 100V 9.2A/37.1A DPAK
Series:
TrenchFET®
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
9.2A (Ta), 37.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
43mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
160 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4600 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
8.3W (Ta), 136W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Stock:
0
Part Number:
MCP70N15YA-BP
Manufacturer:
Micro Commercial Co
Description:
N-CHANNEL MOSFET,TO-220AB(H)
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
21mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2511 pF @ 75 V
FET Feature:
-
Power Dissipation (Max):
136W (Tj)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB (H)
Package / Case:
TO-220-3
Stock:
0
Part Number:
MCG45N10Y-TP
Manufacturer:
Micro Commercial Co
Description:
MOSFET
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1683 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
48W (Tj)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DFN3333
Package / Case:
8-VDFN Exposed Pad
Stock:
0
Part Number:
ISC0805NLSATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 13A/71A TDSON
Series:
OptiMOS™ 5
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
13A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
2.3V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:
33 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2200 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 74W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-46
Package / Case:
8-PowerTDFN
Stock:
22278
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