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FETs, MOSFETs - Single (41758)

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Part Number:

SIHP15N50E-BE3

Manufacturer:

Vishay Siliconix

Description:

N-CHANNEL 500V

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    500 V

  • Current - Continuous Drain (Id) @ 25°C:

    14.5A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    280mOhm @ 7.5A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    66 nC @ 10 V

  • Vgs (Max):

    ±30V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1162 pF @ 100 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    156W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220AB

  • Package / Case:

    TO-220-3

Stock:

5535

1

Part Number:

DMN3061SWQ-7

Manufacturer:

Diodes Incorporated

Description:

MOSFET BVDSS: 25V~30V SOT323 T&R

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30 V

  • Current - Continuous Drain (Id) @ 25°C:

    2.7A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    3.3V, 10V

  • Rds On (Max) @ Id, Vgs:

    60mOhm @ 3.1A, 10V

  • Vgs(th) (Max) @ Id:

    1.8V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    3.5 nC @ 4.5 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    278 pF @ 15 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    490mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    SOT-323

  • Package / Case:

    SC-70, SOT-323

Stock:

19800

1

Part Number:

CDMSJ22029-650-SL

Manufacturer:

Central Semiconductor Corp

Description:

SUPER JUNCTION MOSFETS

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    650 V

  • Current - Continuous Drain (Id) @ 25°C:

    29A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    130mOhm @ 10.8A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    51 nC @ 10 V

  • Vgs (Max):

    30V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1920 pF @ 400 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    33W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220FP

  • Package / Case:

    TO-220-3 Full Pack

Stock:

1500

1

Part Number:

DMN39M1LSS-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET BVDSS: 25V~30V SO-8 T&R 2

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30 V

  • Current - Continuous Drain (Id) @ 25°C:

    15A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    5.5mOhm @ 15A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    42 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2311 pF @ 15 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    1.4W (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    8-SO

  • Package / Case:

    8-SOIC (0.154", 3.90mm Width)

Stock:

0

1

Part Number:

IPB65R115CFD7AATMA1

Manufacturer:

Infineon Technologies

Description:

AUTOMOTIVE_COOLMOS PG-TO263-3

  • Series:

    CoolMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    650 V

  • Current - Continuous Drain (Id) @ 25°C:

    21A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    115mOhm @ 9.7A, 10V

  • Vgs(th) (Max) @ Id:

    4.5V @ 490µA

  • Gate Charge (Qg) (Max) @ Vgs:

    41 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1950 pF @ 400 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    114W (Tc)

  • Operating Temperature:

    -40°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PG-TO263-3

  • Package / Case:

    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Stock:

2970

1

Part Number:

TPCP8107-LF

Manufacturer:

Toshiba Semiconductor and Storage

Description:

MOSFET P-CH 40V 8A PS-8

  • Series:

    U-MOSVI

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40 V

  • Current - Continuous Drain (Id) @ 25°C:

    8A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    6V, 10V

  • Rds On (Max) @ Id, Vgs:

    18mOhm @ 4A, 10V

  • Vgs(th) (Max) @ Id:

    3V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    44.6 nC @ 10 V

  • Vgs (Max):

    +10V, -20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2160 pF @ 10 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    1W (Ta)

  • Operating Temperature:

    175°C

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PS-8

  • Package / Case:

    8-SMD, Flat Lead

Stock:

11598

1

Part Number:

SUD50P10-43L-BE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET P-CH 100V 9.2A/37.1A DPAK

  • Series:

    TrenchFET®

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100 V

  • Current - Continuous Drain (Id) @ 25°C:

    9.2A (Ta), 37.1A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    43mOhm @ 9.2A, 10V

  • Vgs(th) (Max) @ Id:

    3V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    160 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    4600 pF @ 50 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    8.3W (Ta), 136W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    TO-252AA

  • Package / Case:

    TO-252-3, DPAK (2 Leads + Tab), SC-63

Stock:

0

1

Part Number:

MCP70N15YA-BP

Manufacturer:

Micro Commercial Co

Description:

N-CHANNEL MOSFET,TO-220AB(H)

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    150 V

  • Current - Continuous Drain (Id) @ 25°C:

    70A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    21mOhm @ 35A, 10V

  • Vgs(th) (Max) @ Id:

    5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    38 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2511 pF @ 75 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    136W (Tj)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220AB (H)

  • Package / Case:

    TO-220-3

Stock:

0

1

Part Number:

MCG45N10Y-TP

Manufacturer:

Micro Commercial Co

Description:

MOSFET

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100 V

  • Current - Continuous Drain (Id) @ 25°C:

    45A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    12mOhm @ 10A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    35 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1683 pF @ 50 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    48W (Tj)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DFN3333

  • Package / Case:

    8-VDFN Exposed Pad

Stock:

0

1

Part Number:

ISC0805NLSATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 100V 13A/71A TDSON

  • Series:

    OptiMOS™ 5

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100 V

  • Current - Continuous Drain (Id) @ 25°C:

    13A (Ta), 71A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    7.8mOhm @ 50A, 10V

  • Vgs(th) (Max) @ Id:

    2.3V @ 40µA

  • Gate Charge (Qg) (Max) @ Vgs:

    33 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2200 pF @ 50 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    2.5W (Ta), 74W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PG-TDSON-8-46

  • Package / Case:

    8-PowerTDFN

Stock:

22278

1

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