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FETs, MOSFETs - Single (41758)

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Part Number:

BUK9E8R5-40E,127

Manufacturer:

NXP

Description:

MOSFET N-CH 40V 75A I2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    6.6mOhm @ 20A, 10V

  • Vgs(th) (Max) @ Id:

    2.1V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    20.9nC @ 5V

  • Vgs (Max):

    ±10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2600pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    96W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    I2PAK

  • Package / Case:

    TO-262-3 Long Leads, I²Pak, TO-262AA

Stock:

438

1

Part Number:

BUK9E6R1-100E,127

Manufacturer:

NXP

Description:

MOSFET N-CH 100V 120A I2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100V

  • Current - Continuous Drain (Id) @ 25°C:

    120A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    5.9mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2.1V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    133nC @ 5V

  • Vgs (Max):

    ±10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    17460pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    349W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    I2PAK

  • Package / Case:

    TO-262-3 Long Leads, I²Pak, TO-262AA

Stock:

338

1

Part Number:

BUK9E4R9-60E,127

Manufacturer:

NXP

Description:

MOSFET N-CH 60V 100A I2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    100A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    4.5mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2.1V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    65nC @ 5V

  • Vgs (Max):

    ±10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    9710pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    234W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    I2PAK

  • Package / Case:

    TO-262-3 Long Leads, I²Pak, TO-262AA

Stock:

404

1

Part Number:

BUK9E4R4-80E,127

Manufacturer:

NXP

Description:

MOSFET N-CH 80V 120A I2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    80V

  • Current - Continuous Drain (Id) @ 25°C:

    120A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    4.2mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2.1V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    123nC @ 5V

  • Vgs (Max):

    ±10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    17130pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    349W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    I2PAK

  • Package / Case:

    TO-262-3 Long Leads, I²Pak, TO-262AA

Stock:

271

1

Part Number:

BUK9E3R7-60E,127

Manufacturer:

NXP

Description:

MOSFET N-CH 60V 120A I2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    120A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    3.4mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2.1V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    95nC @ 5V

  • Vgs (Max):

    ±10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    13490pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    293W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    I2PAK

  • Package / Case:

    TO-262-3 Long Leads, I²Pak, TO-262AA

Stock:

362

1

Part Number:

BUK9E3R2-40E,127

Manufacturer:

NXP

Description:

MOSFET N-CH 40V 100A I2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    100A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    2.8mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2.1V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    69.5nC @ 5V

  • Vgs (Max):

    ±10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    9150pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    234W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    I2PAK

  • Package / Case:

    TO-262-3 Long Leads, I²Pak, TO-262AA

Stock:

431

1

Part Number:

BUK9E2R8-60E,127

Manufacturer:

NXP

Description:

MOSFET N-CH 60V 120A I2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    120A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    2.6mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2.1V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    120nC @ 5V

  • Vgs (Max):

    ±10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    17450pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    349W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    I2PAK

  • Package / Case:

    TO-262-3 Long Leads, I²Pak, TO-262AA

Stock:

341

1

Part Number:

BUK9E2R3-40E,127

Manufacturer:

NXP

Description:

MOSFET N-CH 40V 120A I2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    120A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    2.2mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2.1V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    87.8nC @ 5V

  • Vgs (Max):

    ±10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    13160pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    293W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    I2PAK

  • Package / Case:

    TO-262-3 Long Leads, I²Pak, TO-262AA

Stock:

237

1

Part Number:

BUK9E1R9-40E,127

Manufacturer:

NXP

Description:

MOSFET N-CH 40V I2PAK

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    I2PAK

  • Package / Case:

    TO-262-3 Long Leads, I²Pak, TO-262AA

Stock:

209

1

Part Number:

BUK9E1R6-30E,127

Manufacturer:

NXP

Description:

MOSFET N-CH 30V 120A I2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    120A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    1.4mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2.1V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    113nC @ 5V

  • Vgs (Max):

    ±10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    16150pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    349W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    I2PAK

  • Package / Case:

    TO-262-3 Long Leads, I²Pak, TO-262AA

Stock:

165

1

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