Part Number:
BUK9E8R5-40E,127
Manufacturer:
NXP
Description:
MOSFET N-CH 40V 75A I2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
6.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
20.9nC @ 5V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
2600pF @ 25V
FET Feature:
-
Power Dissipation (Max):
96W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Stock:
438
Part Number:
BUK9E6R1-100E,127
Manufacturer:
NXP
Description:
MOSFET N-CH 100V 120A I2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
5.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
133nC @ 5V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
17460pF @ 25V
FET Feature:
-
Power Dissipation (Max):
349W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Stock:
338
Part Number:
BUK9E4R9-60E,127
Manufacturer:
NXP
Description:
MOSFET N-CH 60V 100A I2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
65nC @ 5V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
9710pF @ 25V
FET Feature:
-
Power Dissipation (Max):
234W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Stock:
404
Part Number:
BUK9E4R4-80E,127
Manufacturer:
NXP
Description:
MOSFET N-CH 80V 120A I2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
123nC @ 5V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
17130pF @ 25V
FET Feature:
-
Power Dissipation (Max):
349W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Stock:
271
Part Number:
BUK9E3R7-60E,127
Manufacturer:
NXP
Description:
MOSFET N-CH 60V 120A I2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
95nC @ 5V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
13490pF @ 25V
FET Feature:
-
Power Dissipation (Max):
293W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Stock:
362
Part Number:
BUK9E3R2-40E,127
Manufacturer:
NXP
Description:
MOSFET N-CH 40V 100A I2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
69.5nC @ 5V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
9150pF @ 25V
FET Feature:
-
Power Dissipation (Max):
234W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Stock:
431
Part Number:
BUK9E2R8-60E,127
Manufacturer:
NXP
Description:
MOSFET N-CH 60V 120A I2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
120nC @ 5V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
17450pF @ 25V
FET Feature:
-
Power Dissipation (Max):
349W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Stock:
341
Part Number:
BUK9E2R3-40E,127
Manufacturer:
NXP
Description:
MOSFET N-CH 40V 120A I2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
87.8nC @ 5V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
13160pF @ 25V
FET Feature:
-
Power Dissipation (Max):
293W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Stock:
237
Part Number:
BUK9E1R9-40E,127
Manufacturer:
NXP
Description:
MOSFET N-CH 40V I2PAK
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Stock:
209
Part Number:
BUK9E1R6-30E,127
Manufacturer:
NXP
Description:
MOSFET N-CH 30V 120A I2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
113nC @ 5V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
16150pF @ 25V
FET Feature:
-
Power Dissipation (Max):
349W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Stock:
165
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