FETs, MOSFETs - Single (41758)

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

54A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Rds On (Max) @ Id, Vgs:

13mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

20.5nC @ 5V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

2651pF @ 25V

FET Feature:

-

Power Dissipation (Max):

96W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

I2PAK

Package / Case:

TO-262-3 Long Leads, I²Pak, TO-262AA

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Rds On (Max) @ Id, Vgs:

6.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

20.9nC @ 5V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

2600pF @ 25V

FET Feature:

-

Power Dissipation (Max):

96W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Rds On (Max) @ Id, Vgs:

5.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

133nC @ 5V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

17460pF @ 25V

FET Feature:

-

Power Dissipation (Max):

349W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

80V

Current - Continuous Drain (Id) @ 25°C:

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Rds On (Max) @ Id, Vgs:

4.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

123nC @ 5V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

17130pF @ 25V

FET Feature:

-

Power Dissipation (Max):

349W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Rds On (Max) @ Id, Vgs:

2.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

69.5nC @ 5V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

9150pF @ 25V

FET Feature:

-

Power Dissipation (Max):

234W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Rds On (Max) @ Id, Vgs:

2.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

120nC @ 5V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

17450pF @ 25V

FET Feature:

-

Power Dissipation (Max):

349W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Rds On (Max) @ Id, Vgs:

2.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

87.8nC @ 5V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

13160pF @ 25V

FET Feature:

-

Power Dissipation (Max):

293W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Rds On (Max) @ Id, Vgs:

1.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

120nC @ 5V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

16400pF @ 25V

FET Feature:

-

Power Dissipation (Max):

349W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Rds On (Max) @ Id, Vgs:

1.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

113nC @ 5V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

16150pF @ 25V

FET Feature:

-

Power Dissipation (Max):

349W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

54A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Rds On (Max) @ Id, Vgs:

13mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

20.5nC @ 5V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

2651pF @ 25V

FET Feature:

-

Power Dissipation (Max):

96W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3