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FETs, MOSFETs - Single (41758)

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Part Number:

BUK951R8-40EQ

Manufacturer:

NXP

Description:

MOSFET N-CH 40V TO-220AB

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220AB

  • Package / Case:

    TO-220-3

Stock:

291

1

Part Number:

PMT760EN,115

Manufacturer:

NXP

Description:

MOSFET N-CH 100V SC-73

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100V

  • Current - Continuous Drain (Id) @ 25°C:

    900mA (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    950mOhm @ 800mA, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    3nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    160pF @ 80V

  • FET Feature:

    -

  • Power Dissipation (Max):

    800mW (Ta), 6.2W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    SOT-223

  • Package / Case:

    TO-261-4, TO-261AA

Stock:

145

1

Part Number:

PMT200EN,115

Manufacturer:

NXP

Description:

MOSFET N-CH 100V 1.8A SC-73

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100V

  • Current - Continuous Drain (Id) @ 25°C:

    1.8A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    235mOhm @ 1.5A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    10nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    475pF @ 80V

  • FET Feature:

    -

  • Power Dissipation (Max):

    800mW (Ta), 8.3W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    SOT-223

  • Package / Case:

    TO-261-4, TO-261AA

Stock:

232

1

Part Number:

BUK9C5R3-100EJ

Manufacturer:

NXP

Description:

MOSFET N-CH 100V D2PAK

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100V

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK-7

  • Package / Case:

    TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Stock:

173

1

Part Number:

BUK9C3R8-80EJ

Manufacturer:

NXP

Description:

MOSFET N-CH 80V D2PAK

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    80V

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK-7

  • Package / Case:

    TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Stock:

452

1

Part Number:

BUK9C2R2-60EJ

Manufacturer:

NXP

Description:

MOSFET N-CH 60V D2PAK

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK-7

  • Package / Case:

    TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Stock:

189

1

Part Number:

BUK7C5R4-100EJ

Manufacturer:

NXP

Description:

MOSFET N-CH 100V 147A D2PAK-7

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100V

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK-7

  • Package / Case:

    TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Stock:

240

1

Part Number:

BUK7C4R5-100EJ

Manufacturer:

NXP

Description:

MOSFET N-CH 100V 169A D2PAK-7

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100V

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK-7

  • Package / Case:

    TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Stock:

373

1

Part Number:

BUK7C3R8-80EJ

Manufacturer:

NXP

Description:

MOSFET N-CH 80V 186A D2PAK-7

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    80V

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK-7

  • Package / Case:

    TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Stock:

303

1

Part Number:

BUK7C3R1-80EJ

Manufacturer:

NXP

Description:

MOSFET N-CH 80V 200A D2PAK-7

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    80V

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK-7

  • Package / Case:

    TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Stock:

128

1

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