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FETs, MOSFETs - Single (41758)

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Part Number:

PHX34NQ11T,127

Manufacturer:

NXP

Description:

MOSFET N-CH 110V 24.8A SOT186A

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    110V

  • Current - Continuous Drain (Id) @ 25°C:

    24.8A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    40mOhm @ 17A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    40nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1700pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    56.8W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220F

  • Package / Case:

    TO-220-3 Full Pack, Isolated Tab

Stock:

174

1

Part Number:

PHX27NQ11T,127

Manufacturer:

NXP

Description:

MOSFET N-CH 110V 20.8A SOT186A

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    110V

  • Current - Continuous Drain (Id) @ 25°C:

    20.8A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    50mOhm @ 14A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    30nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1240pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    50W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220F

  • Package / Case:

    TO-220-3 Full Pack, Isolated Tab

Stock:

138

1

Part Number:

PHX23NQ11T,127

Manufacturer:

NXP

Description:

MOSFET N-CH 110V 16A SOT186A

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    110V

  • Current - Continuous Drain (Id) @ 25°C:

    16A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    70mOhm @ 13A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    22nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    830pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    41.6W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220F

  • Package / Case:

    TO-220-3 Full Pack, Isolated Tab

Stock:

233

1

Part Number:

PHX20N06T,127

Manufacturer:

NXP

Description:

MOSFET N-CH 55V 12.9A SOT186A

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    55V

  • Current - Continuous Drain (Id) @ 25°C:

    12.9A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    75mOhm @ 10A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    9.8nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    320pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    23W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220F

  • Package / Case:

    TO-220-3 Full Pack, Isolated Tab

Stock:

223

1

Part Number:

PHX18NQ11T,127

Manufacturer:

NXP

Description:

MOSFET N-CH 110V 12.5A SOT186A

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    110V

  • Current - Continuous Drain (Id) @ 25°C:

    12.5A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    90mOhm @ 9A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    21nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    635pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    31.2W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220F

  • Package / Case:

    TO-220-3 Full Pack, Isolated Tab

Stock:

362

1

Part Number:

PHW80NQ10T,127

Manufacturer:

NXP

Description:

MOSFET N-CH 100V 80A SOT429

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100V

  • Current - Continuous Drain (Id) @ 25°C:

    80A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    15mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    109nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    4720pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    263W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-247-3

  • Package / Case:

    TO-247-3

Stock:

129

1

Part Number:

PHU78NQ03LT,127

Manufacturer:

NXP

Description:

MOSFET N-CH 25V 75A SOT533

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    9mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    11nC @ 4.5V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    970pF @ 12V

  • FET Feature:

    -

  • Power Dissipation (Max):

    107W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    I-PAK

  • Package / Case:

    TO-251-3 Short Leads, IPak, TO-251AA

Stock:

250

1

Part Number:

PHU66NQ03LT,127

Manufacturer:

NXP

Description:

MOSFET N-CH 25V 66A SPT533

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25V

  • Current - Continuous Drain (Id) @ 25°C:

    66A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    10.5mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    12nC @ 5V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    860pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    93W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    I-PAK

  • Package / Case:

    TO-251-3 Short Leads, IPak, TO-251AA

Stock:

288

1

Part Number:

PHU11NQ10T,127

Manufacturer:

NXP

Description:

MOSFET N-CH 100V 10.9A SOT533

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100V

  • Current - Continuous Drain (Id) @ 25°C:

    10.9A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    180mOhm @ 9A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    14.7nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    360pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    57.7W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    I-PAK

  • Package / Case:

    TO-251-3 Short Leads, IPak, TO-251AA

Stock:

313

1

Part Number:

PHU108NQ03LT,127

Manufacturer:

NXP

Description:

MOSFET N-CH 25V 75A SOT533

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    6mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    16.3nC @ 4.5V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1375pF @ 12V

  • FET Feature:

    -

  • Power Dissipation (Max):

    187W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    I-PAK

  • Package / Case:

    TO-251-3 Short Leads, IPak, TO-251AA

Stock:

365

1

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