Part Number:
PHX34NQ11T,127
Manufacturer:
NXP
Description:
MOSFET N-CH 110V 24.8A SOT186A
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
110V
Current - Continuous Drain (Id) @ 25°C:
24.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
40mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1700pF @ 25V
FET Feature:
-
Power Dissipation (Max):
56.8W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F
Package / Case:
TO-220-3 Full Pack, Isolated Tab
Stock:
174
Part Number:
PHX27NQ11T,127
Manufacturer:
NXP
Description:
MOSFET N-CH 110V 20.8A SOT186A
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
110V
Current - Continuous Drain (Id) @ 25°C:
20.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
50mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1240pF @ 25V
FET Feature:
-
Power Dissipation (Max):
50W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F
Package / Case:
TO-220-3 Full Pack, Isolated Tab
Stock:
138
Part Number:
PHX23NQ11T,127
Manufacturer:
NXP
Description:
MOSFET N-CH 110V 16A SOT186A
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
110V
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
70mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
830pF @ 25V
FET Feature:
-
Power Dissipation (Max):
41.6W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F
Package / Case:
TO-220-3 Full Pack, Isolated Tab
Stock:
233
Part Number:
PHX20N06T,127
Manufacturer:
NXP
Description:
MOSFET N-CH 55V 12.9A SOT186A
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55V
Current - Continuous Drain (Id) @ 25°C:
12.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
75mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
9.8nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
320pF @ 25V
FET Feature:
-
Power Dissipation (Max):
23W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F
Package / Case:
TO-220-3 Full Pack, Isolated Tab
Stock:
223
Part Number:
PHX18NQ11T,127
Manufacturer:
NXP
Description:
MOSFET N-CH 110V 12.5A SOT186A
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
110V
Current - Continuous Drain (Id) @ 25°C:
12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
21nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
635pF @ 25V
FET Feature:
-
Power Dissipation (Max):
31.2W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F
Package / Case:
TO-220-3 Full Pack, Isolated Tab
Stock:
362
Part Number:
PHW80NQ10T,127
Manufacturer:
NXP
Description:
MOSFET N-CH 100V 80A SOT429
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
15mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
109nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4720pF @ 25V
FET Feature:
-
Power Dissipation (Max):
263W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
Package / Case:
TO-247-3
Stock:
129
Part Number:
PHU78NQ03LT,127
Manufacturer:
NXP
Description:
MOSFET N-CH 25V 75A SOT533
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 4.5V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
970pF @ 12V
FET Feature:
-
Power Dissipation (Max):
107W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
I-PAK
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Stock:
250
Part Number:
PHU66NQ03LT,127
Manufacturer:
NXP
Description:
MOSFET N-CH 25V 66A SPT533
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
66A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
10.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 5V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
860pF @ 25V
FET Feature:
-
Power Dissipation (Max):
93W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
I-PAK
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Stock:
288
Part Number:
PHU11NQ10T,127
Manufacturer:
NXP
Description:
MOSFET N-CH 100V 10.9A SOT533
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
10.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
180mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
14.7nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
360pF @ 25V
FET Feature:
-
Power Dissipation (Max):
57.7W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
I-PAK
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Stock:
313
Part Number:
PHU108NQ03LT,127
Manufacturer:
NXP
Description:
MOSFET N-CH 25V 75A SOT533
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
16.3nC @ 4.5V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1375pF @ 12V
FET Feature:
-
Power Dissipation (Max):
187W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
I-PAK
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Stock:
365
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