Part Number:
PSMN005-55P,127
Manufacturer:
NXP
Description:
MOSFET N-CH 55V 75A TO220AB
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
103nC @ 5V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
6500pF @ 25V
FET Feature:
-
Power Dissipation (Max):
230W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Package / Case:
TO-220-3
Stock:
364
Part Number:
PSMN005-25D,118
Manufacturer:
NXP
Description:
MOSFET N-CH 25V 75A DPAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
5.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
60nC @ 5V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
3500pF @ 20V
FET Feature:
-
Power Dissipation (Max):
125W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Stock:
213
Part Number:
PSMN004-55W,127
Manufacturer:
NXP
Description:
MOSFET N-CH 55V 100A SOT429
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
226nC @ 5V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
13000pF @ 25V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
Package / Case:
TO-247-3
Stock:
229
Part Number:
PSMN004-36B,118
Manufacturer:
NXP
Description:
MOSFET N-CH 36V 75A D2PAK
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
36V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
97nC @ 5V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
6000pF @ 20V
FET Feature:
-
Power Dissipation (Max):
230W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Stock:
500
Part Number:
PMR780SN,115
Manufacturer:
NXP
Description:
MOSFET N-CH 60V 0.55A SOT416
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
920mOhm @ 300mA, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.05nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
23pF @ 30V
FET Feature:
-
Power Dissipation (Max):
530mW (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
SC-75
Package / Case:
SC-75, SOT-416
Stock:
202
Part Number:
PMN45EN,165
Manufacturer:
NXP
Description:
MOSFET N-CH 30V 5.2A 6TSOP
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
40mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
6.1nC @ 4.5V
Vgs (Max):
20V
Input Capacitance (Ciss) (Max) @ Vds:
495pF @ 25V
FET Feature:
-
Power Dissipation (Max):
1.75W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP
Package / Case:
SC-74, SOT-457
Stock:
382
Part Number:
PMN28UN,165
Manufacturer:
NXP
Description:
MOSFET N-CH 12V 5.7A 6TSOP
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
12V
Current - Continuous Drain (Id) @ 25°C:
5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
34mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:
700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
10.1nC @ 4.5V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
740pF @ 10V
FET Feature:
-
Power Dissipation (Max):
1.75W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP
Package / Case:
SC-74, SOT-457
Stock:
171
Part Number:
PMG370XN,115
Manufacturer:
NXP
Description:
MOSFET N-CH 30V 0.96A 6TSSOP
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
960mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
440mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.65nC @ 4.5V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
37pF @ 25V
FET Feature:
-
Power Dissipation (Max):
690mW (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSSOP
Package / Case:
6-TSSOP, SC-88, SOT-363
Stock:
306
Part Number:
PHX8NQ11T,127
Manufacturer:
NXP
Description:
MOSFET N-CH 110V 7.5A SOT186A
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
110V
Current - Continuous Drain (Id) @ 25°C:
7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
180mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
14.7nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
360pF @ 25V
FET Feature:
-
Power Dissipation (Max):
27.7W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F
Package / Case:
TO-220-3 Full Pack, Isolated Tab
Stock:
489
Part Number:
PHX45NQ11T,127
Manufacturer:
NXP
Description:
MOSFET N-CH 110V 30.4A SOT186A
Series:
TrenchMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
110V
Current - Continuous Drain (Id) @ 25°C:
30.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
25mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
61nC @ 10V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2600pF @ 25V
FET Feature:
-
Power Dissipation (Max):
62.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F
Package / Case:
TO-220-3 Full Pack, Isolated Tab
Stock:
385
每日获取来自全球众多供应商的最新优惠资讯