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FETs, MOSFETs - Single (41758)

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Part Number:

PSMN005-55P,127

Manufacturer:

NXP

Description:

MOSFET N-CH 55V 75A TO220AB

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    55V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    5.8mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    103nC @ 5V

  • Vgs (Max):

    ±15V

  • Input Capacitance (Ciss) (Max) @ Vds:

    6500pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    230W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220AB

  • Package / Case:

    TO-220-3

Stock:

364

1

Part Number:

PSMN005-25D,118

Manufacturer:

NXP

Description:

MOSFET N-CH 25V 75A DPAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    5.8mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    60nC @ 5V

  • Vgs (Max):

    ±15V

  • Input Capacitance (Ciss) (Max) @ Vds:

    3500pF @ 20V

  • FET Feature:

    -

  • Power Dissipation (Max):

    125W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

213

1

Part Number:

PSMN004-55W,127

Manufacturer:

NXP

Description:

MOSFET N-CH 55V 100A SOT429

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    55V

  • Current - Continuous Drain (Id) @ 25°C:

    100A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    4.2mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    226nC @ 5V

  • Vgs (Max):

    ±15V

  • Input Capacitance (Ciss) (Max) @ Vds:

    13000pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    300W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-247-3

  • Package / Case:

    TO-247-3

Stock:

229

1

Part Number:

PSMN004-36B,118

Manufacturer:

NXP

Description:

MOSFET N-CH 36V 75A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    36V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    4mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    97nC @ 5V

  • Vgs (Max):

    ±15V

  • Input Capacitance (Ciss) (Max) @ Vds:

    6000pF @ 20V

  • FET Feature:

    -

  • Power Dissipation (Max):

    230W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

500

1

Part Number:

PMR780SN,115

Manufacturer:

NXP

Description:

MOSFET N-CH 60V 0.55A SOT416

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    550mA (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    920mOhm @ 300mA, 10V

  • Vgs(th) (Max) @ Id:

    3V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    1.05nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    23pF @ 30V

  • FET Feature:

    -

  • Power Dissipation (Max):

    530mW (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    SC-75

  • Package / Case:

    SC-75, SOT-416

Stock:

202

1

Part Number:

PMN45EN,165

Manufacturer:

NXP

Description:

MOSFET N-CH 30V 5.2A 6TSOP

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    5.2A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    40mOhm @ 3A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    6.1nC @ 4.5V

  • Vgs (Max):

    20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    495pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    1.75W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    6-TSOP

  • Package / Case:

    SC-74, SOT-457

Stock:

382

1

Part Number:

PMN28UN,165

Manufacturer:

NXP

Description:

MOSFET N-CH 12V 5.7A 6TSOP

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    12V

  • Current - Continuous Drain (Id) @ 25°C:

    5.7A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    1.8V, 4.5V

  • Rds On (Max) @ Id, Vgs:

    34mOhm @ 2A, 4.5V

  • Vgs(th) (Max) @ Id:

    700mV @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    10.1nC @ 4.5V

  • Vgs (Max):

    ±8V

  • Input Capacitance (Ciss) (Max) @ Vds:

    740pF @ 10V

  • FET Feature:

    -

  • Power Dissipation (Max):

    1.75W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    6-TSOP

  • Package / Case:

    SC-74, SOT-457

Stock:

171

1

Part Number:

PMG370XN,115

Manufacturer:

NXP

Description:

MOSFET N-CH 30V 0.96A 6TSSOP

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    960mA (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    2.5V, 4.5V

  • Rds On (Max) @ Id, Vgs:

    440mOhm @ 200mA, 4.5V

  • Vgs(th) (Max) @ Id:

    1.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    0.65nC @ 4.5V

  • Vgs (Max):

    ±12V

  • Input Capacitance (Ciss) (Max) @ Vds:

    37pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    690mW (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    6-TSSOP

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

Stock:

306

1

Part Number:

PHX8NQ11T,127

Manufacturer:

NXP

Description:

MOSFET N-CH 110V 7.5A SOT186A

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    110V

  • Current - Continuous Drain (Id) @ 25°C:

    7.5A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    180mOhm @ 6A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    14.7nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    360pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    27.7W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220F

  • Package / Case:

    TO-220-3 Full Pack, Isolated Tab

Stock:

489

1

Part Number:

PHX45NQ11T,127

Manufacturer:

NXP

Description:

MOSFET N-CH 110V 30.4A SOT186A

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    110V

  • Current - Continuous Drain (Id) @ 25°C:

    30.4A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    25mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    61nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2600pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    62.5W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220F

  • Package / Case:

    TO-220-3 Full Pack, Isolated Tab

Stock:

385

1

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