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HP8KC6TB1

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Part Number

HP8KC6TB1

Manufacturer

Rohm Semiconductor

Description

60V 23A, DUAL NCH+NCH, HSOP8, PO

Lifecycle

Active

RoHS

No RoHS Information

EDA/CAD Models

HP8KC6TB1 PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:7500 pcs

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HP8KC6TB1 规格

Manufacturer
Rohm Semiconductor
Series
-
FET Type
MOSFET (Metal Oxide)
FET Feature
-
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
8.5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs
27mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
7.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
460pF @ 30V
Power - Max
3W (Ta), 21W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-HSOP

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