FETs, MOSFETs - Arrays (5637)

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

10A (Ta), 24A (Tc)

Rds On (Max) @ Id, Vgs:

19.6mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

19.8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1100pF @ 50V

Power - Max:

3W (Ta), 26W (Tc)

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-PowerTDFN

Supplier Device Package:

8-HSOP

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

337A (Tc)

Rds On (Max) @ Id, Vgs:

7.8mOhm @ 160A, 20V

Vgs(th) (Max) @ Id:

2.8V @ 12mA

Gate Charge (Qg) (Max) @ Vgs:

928nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

12100pF @ 1000V

Power - Max:

1.409kW (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

-

Series:

-

FET Type:

-

FET Feature:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

-

Power - Max:

-

Operating Temperature:

-

Mounting Type:

-

Package / Case:

-

Supplier Device Package:

-

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

50V

Current - Continuous Drain (Id) @ 25°C:

480mA (Ta)

Rds On (Max) @ Id, Vgs:

2Ohm @ 5mA, 5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

1.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

39pF @ 25V

Power - Max:

480mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-563, SOT-666

Supplier Device Package:

SOT-563

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

25A (Tc)

Rds On (Max) @ Id, Vgs:

10mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

16.7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1155pF @ 15V

Power - Max:

900mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-PowerVDFN

Supplier Device Package:

PowerDI3333-8 (Type UXC)

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

251A (Tc)

Rds On (Max) @ Id, Vgs:

10.4mOhm @ 120A, 20V

Vgs(th) (Max) @ Id:

2.8V @ 3mA

Gate Charge (Qg) (Max) @ Vgs:

696nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

9060pF @ 1000V

Power - Max:

1.042kW (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

SP6-P

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

5.5A (Ta)

Rds On (Max) @ Id, Vgs:

30mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id:

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

10.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

500pF @ 15V

Power - Max:

820mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

6-UDFN Exposed Pad

Supplier Device Package:

U-DFN2020-6 (SWP) Type B

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

55A (Tc)

Rds On (Max) @ Id, Vgs:

50mOhm @ 40A, 20V

Vgs(th) (Max) @ Id:

2.7V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:

137nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

1990pF @ 1000V

Power - Max:

245W (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

-

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

455mA (Ta)

Rds On (Max) @ Id, Vgs:

2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

0.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

41pF @ 30V

Power - Max:

500mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package:

TSOT-26

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

8A (Ta)

Rds On (Max) @ Id, Vgs:

20.5mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

18nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

865pF @ 15V

Power - Max:

2W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package:

8-SOIC