FETs, MOSFETs - Arrays (5637)

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

79A (Tc)

Rds On (Max) @ Id, Vgs:

5.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

13.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1083pF @ 20V

Power - Max:

3.3W (Ta), 60W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-PowerTDFN

Supplier Device Package:

PowerDI5060-8 (Type UXD)

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

8.5A (Tc)

Rds On (Max) @ Id, Vgs:

20mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

393pF @ 15V

Power - Max:

670mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-VDFN Exposed Pad

Supplier Device Package:

V-DFN3030-8 (Type K)

Series:

C, CoolSiC™

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

2000V (2kV)

Current - Continuous Drain (Id) @ 25°C:

280A (Tc)

Rds On (Max) @ Id, Vgs:

5.3mOhm @ 300A, 18V

Vgs(th) (Max) @ Id:

5.15V @ 168mA

Gate Charge (Qg) (Max) @ Vgs:

1170nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds:

36100pF @ 1.2kV

Power - Max:

-

Operating Temperature:

-40°C ~ 175°C

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

AG-62MMHB

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

40A (Ta)

Rds On (Max) @ Id, Vgs:

11.2mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

22.4nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

2953pF @ 25V

Power - Max:

64W (Ta)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-1205, 8-LFPAK56

Supplier Device Package:

LFPAK56D

Series:

-

FET Type:

-

FET Feature:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

-

Power - Max:

-

Operating Temperature:

-

Mounting Type:

-

Package / Case:

-

Supplier Device Package:

-

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1700V (1.7kV)

Current - Continuous Drain (Id) @ 25°C:

64A (Tc)

Rds On (Max) @ Id, Vgs:

45mOhm @ 30A, 20V

Vgs(th) (Max) @ Id:

3.2V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs:

178nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

3300pF @ 1000V

Power - Max:

319W (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

SP3F

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

4.6A (Ta), 3.1A (Ta)

Rds On (Max) @ Id, Vgs:

35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

7.7nC @ 10V, 12.7nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:

369pF @ 10V, 440pF @ 10V

Power - Max:

820mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

6-UDFN Exposed Pad

Supplier Device Package:

U-DFN2020-6 (Type B)

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

6A (Ta)

Rds On (Max) @ Id, Vgs:

33mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

11.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

683pF @ 50V

Power - Max:

900mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

12-PowerVDFN

Supplier Device Package:

V-DFN5045-12 (Type C)

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

333A (Tc)

Rds On (Max) @ Id, Vgs:

7.8mOhm @ 80A, 20V

Vgs(th) (Max) @ Id:

2.8V @ 12mA

Gate Charge (Qg) (Max) @ Vgs:

928nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

12000pF @ 1000V

Power - Max:

873W (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

-

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

650mA (Ta)

Rds On (Max) @ Id, Vgs:

1.8Ohm @ 150mA, 5V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

1.5nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

60pF @ 12V

Power - Max:

1.5W (Ta)

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Package / Case:

6-SMD, Flat Leads

Supplier Device Package:

6-TSOP-F